Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane

B. S. Kang; J. Kim; S. Jang; F. Ren; J. W. Johnson; R. J. Therrien; P. Rajagopal; J. C. Roberts; E. L. Piner; K. J. Linthicum; S. N.G. Chu; K. Baik; B. P. Gila; C. R. Abernathy; S. J. Pearton

doi:10.1063/1.1952568

Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane

B. S. Kang^*
, J. Kim
, S. Jang
, F. Ren
, J. W. Johnson
, R. J. Therrien
, P. Rajagopal
, J. C. Roberts
, E. L. Piner
, K. J. Linthicum
, S. N.G. Chu
, K. Baik
, B. P. Gila
, C. R. Abernathy
, S. J. Pearton

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

50 Citations (Scopus)

Abstract

The changes in the capacitance of the channel of an AlGaN/GaN high-electron-mobility transistor (HEMT) membrane structure fabricated on a Si substrate were measured during the application of both tensile and compressive strain through changes in the ambient pressure. The capacitance of the channel displays a change of 7.19±0.45 × 10 ^-3 pF/μm as a function of the radius of the membrane at a fixed pressure of +9.5 bar and exhibits a linear characteristic response between -0.5 and +1 bar with a sensitivity of 0.86 pF/bar for a 600 μm radius membrane. The hysteresis was 0.4% in the linear range. These AlGaN/GaN HEMT membrane-based sensors appear to be promising for both room-temperature and elevated-temperature pressure-sensing applications.

Original language	English
Article number	253502
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	25
DOIs	https://doi.org/10.1063/1.1952568
Publication status	Published - 2005
Externally published	Yes

Bibliographical note

Funding Information:
The work at UF is partially supported by AFOSR (F49620-02-1-0366, G. Witt, and F49620-03-1-0370), NSF (CTS-0301178, monitored by Dr. M. Burka and Dr. D. Senich), by NASA Kennedy Space Center Grant NAG 10-316 monitored by Mr. Daniel E. Fitch, ONR (N00014-98-1-02-04, H. B. Dietrich), and NSF DMR 0400416 (L. Hess).

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1952568

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Kang, B. S., Kim, J., Jang, S., Ren, F., Johnson, J. W., Therrien, R. J., Rajagopal, P., Roberts, J. C., Piner, E. L., Linthicum, K. J., Chu, S. N. G., Baik, K., Gila, B. P., Abernathy, C. R., & Pearton, S. J. (2005). Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane. Applied Physics Letters, 86(25), 1-3. Article 253502. https://doi.org/10.1063/1.1952568

@article{f19fa4dbaf6c42c6b8078090c5605cdd,

title = "Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane",

abstract = "The changes in the capacitance of the channel of an AlGaN/GaN high-electron-mobility transistor (HEMT) membrane structure fabricated on a Si substrate were measured during the application of both tensile and compressive strain through changes in the ambient pressure. The capacitance of the channel displays a change of 7.19±0.45 × 10 -3 pF/μm as a function of the radius of the membrane at a fixed pressure of +9.5 bar and exhibits a linear characteristic response between -0.5 and +1 bar with a sensitivity of 0.86 pF/bar for a 600 μm radius membrane. The hysteresis was 0.4\% in the linear range. These AlGaN/GaN HEMT membrane-based sensors appear to be promising for both room-temperature and elevated-temperature pressure-sensing applications.",

author = "Kang, \{B. S.\} and J. Kim and S. Jang and F. Ren and Johnson, \{J. W.\} and Therrien, \{R. J.\} and P. Rajagopal and Roberts, \{J. C.\} and Piner, \{E. L.\} and Linthicum, \{K. J.\} and Chu, \{S. N.G.\} and K. Baik and Gila, \{B. P.\} and Abernathy, \{C. R.\} and Pearton, \{S. J.\}",

note = "Funding Information: The work at UF is partially supported by AFOSR (F49620-02-1-0366, G. Witt, and F49620-03-1-0370), NSF (CTS-0301178, monitored by Dr. M. Burka and Dr. D. Senich), by NASA Kennedy Space Center Grant NAG 10-316 monitored by Mr. Daniel E. Fitch, ONR (N00014-98-1-02-04, H. B. Dietrich), and NSF DMR 0400416 (L. Hess).",

year = "2005",

doi = "10.1063/1.1952568",

language = "English",

volume = "86",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "25",

}

TY - JOUR

T1 - Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane

AU - Kang, B. S.

AU - Kim, J.

AU - Jang, S.

AU - Ren, F.

AU - Johnson, J. W.

AU - Therrien, R. J.

AU - Rajagopal, P.

AU - Roberts, J. C.

AU - Piner, E. L.

AU - Linthicum, K. J.

AU - Chu, S. N.G.

AU - Baik, K.

AU - Gila, B. P.

AU - Abernathy, C. R.

AU - Pearton, S. J.

N1 - Funding Information: The work at UF is partially supported by AFOSR (F49620-02-1-0366, G. Witt, and F49620-03-1-0370), NSF (CTS-0301178, monitored by Dr. M. Burka and Dr. D. Senich), by NASA Kennedy Space Center Grant NAG 10-316 monitored by Mr. Daniel E. Fitch, ONR (N00014-98-1-02-04, H. B. Dietrich), and NSF DMR 0400416 (L. Hess).

PY - 2005

Y1 - 2005

N2 - The changes in the capacitance of the channel of an AlGaN/GaN high-electron-mobility transistor (HEMT) membrane structure fabricated on a Si substrate were measured during the application of both tensile and compressive strain through changes in the ambient pressure. The capacitance of the channel displays a change of 7.19±0.45 × 10 -3 pF/μm as a function of the radius of the membrane at a fixed pressure of +9.5 bar and exhibits a linear characteristic response between -0.5 and +1 bar with a sensitivity of 0.86 pF/bar for a 600 μm radius membrane. The hysteresis was 0.4% in the linear range. These AlGaN/GaN HEMT membrane-based sensors appear to be promising for both room-temperature and elevated-temperature pressure-sensing applications.

AB - The changes in the capacitance of the channel of an AlGaN/GaN high-electron-mobility transistor (HEMT) membrane structure fabricated on a Si substrate were measured during the application of both tensile and compressive strain through changes in the ambient pressure. The capacitance of the channel displays a change of 7.19±0.45 × 10 -3 pF/μm as a function of the radius of the membrane at a fixed pressure of +9.5 bar and exhibits a linear characteristic response between -0.5 and +1 bar with a sensitivity of 0.86 pF/bar for a 600 μm radius membrane. The hysteresis was 0.4% in the linear range. These AlGaN/GaN HEMT membrane-based sensors appear to be promising for both room-temperature and elevated-temperature pressure-sensing applications.

UR - https://www.scopus.com/pages/publications/24344445315

U2 - 10.1063/1.1952568

DO - 10.1063/1.1952568

M3 - Article

AN - SCOPUS:24344445315

SN - 0003-6951

VL - 86

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

M1 - 253502

ER -

Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane

Abstract

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