Capacitance-voltage characteristics of MOS capacitors with Ge nanocrystals embedded in HfO2 gate material

Hye Ryoung Lee; Samjong Choi; Kyoungah Cho; Sangsig Kim

doi:10.1109/NMDC.2006.4388802

Capacitance-voltage characteristics of MOS capacitors with Ge nanocrystals embedded in HfO₂ gate material

Hye Ryoung Lee, Samjong Choi, Kyoungah Cho, Sangsig Kim

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Ge nanocrystals(NCs)-embedded MOS capacitors are characterized in this work using capacitance-voltage measurement. High-k dielectrics HfO₂ are employed for the gate material in the MOS capacitors, and the C-V curves obtained from O₂- and NH₃-annealed HfO₂ films are analyzed.

Original language	English
Title of host publication	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages	432-433
Number of pages	2
DOIs	https://doi.org/10.1109/NMDC.2006.4388802
Publication status	Published - 2006
Event	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of Duration: 2006 Oct 22 → 2006 Oct 25

Publication series

Name	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Volume	1

Other

Other	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Country/Territory	Korea, Republic of
City	Gyeongju
Period	06/10/22 → 06/10/25

Keywords

Component
Ge NCs
HfO
Nano-floating gate
Nitridation

ASJC Scopus subject areas

Electrical and Electronic Engineering
General Materials Science

Access to Document

10.1109/NMDC.2006.4388802

Cite this

Lee, H. R., Choi, S., Cho, K., & Kim, S. (2006). Capacitance-voltage characteristics of MOS capacitors with Ge nanocrystals embedded in HfO₂ gate material. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC (pp. 432-433). Article 4388802 (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC; Vol. 1). https://doi.org/10.1109/NMDC.2006.4388802

Capacitance-voltage characteristics of MOS capacitors with Ge nanocrystals embedded in HfO₂ gate material. / Lee, Hye Ryoung; Choi, Samjong; Cho, Kyoungah et al.
2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. 2006. p. 432-433 4388802 (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lee, HR, Choi, S, Cho, K & Kim, S 2006, Capacitance-voltage characteristics of MOS capacitors with Ge nanocrystals embedded in HfO₂ gate material. in 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC., 4388802, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, vol. 1, pp. 432-433, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, Gyeongju, Korea, Republic of, 06/10/22. https://doi.org/10.1109/NMDC.2006.4388802

@inproceedings{fb0953533c134a4d89a9e892324ec4fa,

title = "Capacitance-voltage characteristics of MOS capacitors with Ge nanocrystals embedded in HfO2 gate material",

abstract = "Ge nanocrystals(NCs)-embedded MOS capacitors are characterized in this work using capacitance-voltage measurement. High-k dielectrics HfO2 are employed for the gate material in the MOS capacitors, and the C-V curves obtained from O2- and NH3-annealed HfO2 films are analyzed.",

keywords = "Component, Ge NCs, HfO, Nano-floating gate, Nitridation",

author = "Lee, {Hye Ryoung} and Samjong Choi and Kyoungah Cho and Sangsig Kim",

year = "2006",

doi = "10.1109/NMDC.2006.4388802",

language = "English",

isbn = "1424405408",

series = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",

pages = "432--433",

booktitle = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",

note = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC ; Conference date: 22-10-2006 Through 25-10-2006",

}

TY - GEN

T1 - Capacitance-voltage characteristics of MOS capacitors with Ge nanocrystals embedded in HfO2 gate material

AU - Lee, Hye Ryoung

AU - Choi, Samjong

AU - Cho, Kyoungah

AU - Kim, Sangsig

PY - 2006

Y1 - 2006

N2 - Ge nanocrystals(NCs)-embedded MOS capacitors are characterized in this work using capacitance-voltage measurement. High-k dielectrics HfO2 are employed for the gate material in the MOS capacitors, and the C-V curves obtained from O2- and NH3-annealed HfO2 films are analyzed.

AB - Ge nanocrystals(NCs)-embedded MOS capacitors are characterized in this work using capacitance-voltage measurement. High-k dielectrics HfO2 are employed for the gate material in the MOS capacitors, and the C-V curves obtained from O2- and NH3-annealed HfO2 films are analyzed.

KW - Component

KW - Ge NCs

KW - HfO

KW - Nano-floating gate

KW - Nitridation

UR - http://www.scopus.com/inward/record.url?scp=50249169820&partnerID=8YFLogxK

U2 - 10.1109/NMDC.2006.4388802

DO - 10.1109/NMDC.2006.4388802

M3 - Conference contribution

AN - SCOPUS:50249169820

SN - 1424405408

SN - 9781424405404

T3 - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

SP - 432

EP - 433

BT - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

T2 - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

Y2 - 22 October 2006 through 25 October 2006

ER -