Capacitive coupling model and extraction of the molecular interface states in porphyrin-silicon nanowire hybrid field-effect transistor

I. Nam, B. Hong, M. Kim, J. Shin, I. Song, D. M. Kim, S. Hwang, S. Kim

    Research output: Contribution to journalArticlepeer-review

    2 Citations (Scopus)

    Abstract

    We modeled and extracted the distribution of interface trap density by grafted molecules on the surface of a silicon nanowire field-effect transistor (SNWFET). The subthreshold current model was employed, and the capacitive coupling model of ideality factor was simplified, using a fully depleted SNWFET. We applied the analytical model to p-channel SNWFET with porphyrin, and extracted the distribution of the molecular interface states. There were 748 and 474 traps (average value) in length (L) = 300 nm and L = 500 nm devices, respectively. The trap energy was in the range of 0.27-0.35 eV.

    Original languageEnglish
    Article number233104
    JournalApplied Physics Letters
    Volume103
    Issue number23
    DOIs
    Publication statusPublished - 2013 Dec 2

    Bibliographical note

    Funding Information:
    This CRI work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean Government (MEST) (No. NRF-2007-0054845). D. M. Kim was supported by a National Research Foundation of Korea (NRF) grant funded by the Korean Government (MEST) (2013R1A2A2A05005472).

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Fingerprint

    Dive into the research topics of 'Capacitive coupling model and extraction of the molecular interface states in porphyrin-silicon nanowire hybrid field-effect transistor'. Together they form a unique fingerprint.

    Cite this