Capacitive coupling model and extraction of the molecular interface states in porphyrin-silicon nanowire hybrid field-effect transistor

I. Nam; B. Hong; M. Kim; J. Shin; I. Song; D. M. Kim; S. Hwang; S. Kim

doi:10.1063/1.4834995

Capacitive coupling model and extraction of the molecular interface states in porphyrin-silicon nanowire hybrid field-effect transistor

I. Nam, B. Hong, M. Kim, J. Shin, I. Song, D. M. Kim, S. Hwang, S. Kim

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We modeled and extracted the distribution of interface trap density by grafted molecules on the surface of a silicon nanowire field-effect transistor (SNWFET). The subthreshold current model was employed, and the capacitive coupling model of ideality factor was simplified, using a fully depleted SNWFET. We applied the analytical model to p-channel SNWFET with porphyrin, and extracted the distribution of the molecular interface states. There were 748 and 474 traps (average value) in length (L) = 300 nm and L = 500 nm devices, respectively. The trap energy was in the range of 0.27-0.35 eV.

Original language	English
Article number	233104
Journal	Applied Physics Letters
Volume	103
Issue number	23
DOIs	https://doi.org/10.1063/1.4834995
Publication status	Published - 2013 Dec 2

Bibliographical note

Funding Information:
This CRI work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean Government (MEST) (No. NRF-2007-0054845). D. M. Kim was supported by a National Research Foundation of Korea (NRF) grant funded by the Korean Government (MEST) (2013R1A2A2A05005472).

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4834995

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title = "Capacitive coupling model and extraction of the molecular interface states in porphyrin-silicon nanowire hybrid field-effect transistor",

abstract = "We modeled and extracted the distribution of interface trap density by grafted molecules on the surface of a silicon nanowire field-effect transistor (SNWFET). The subthreshold current model was employed, and the capacitive coupling model of ideality factor was simplified, using a fully depleted SNWFET. We applied the analytical model to p-channel SNWFET with porphyrin, and extracted the distribution of the molecular interface states. There were 748 and 474 traps (average value) in length (L) = 300 nm and L = 500 nm devices, respectively. The trap energy was in the range of 0.27-0.35 eV.",

author = "I. Nam and B. Hong and M. Kim and J. Shin and I. Song and Kim, {D. M.} and S. Hwang and S. Kim",

note = "Funding Information: This CRI work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean Government (MEST) (No. NRF-2007-0054845). D. M. Kim was supported by a National Research Foundation of Korea (NRF) grant funded by the Korean Government (MEST) (2013R1A2A2A05005472).",

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T1 - Capacitive coupling model and extraction of the molecular interface states in porphyrin-silicon nanowire hybrid field-effect transistor

AU - Nam, I.

AU - Hong, B.

AU - Kim, M.

AU - Shin, J.

AU - Song, I.

AU - Kim, D. M.

AU - Hwang, S.

AU - Kim, S.

N1 - Funding Information: This CRI work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean Government (MEST) (No. NRF-2007-0054845). D. M. Kim was supported by a National Research Foundation of Korea (NRF) grant funded by the Korean Government (MEST) (2013R1A2A2A05005472).

PY - 2013/12/2

Y1 - 2013/12/2

N2 - We modeled and extracted the distribution of interface trap density by grafted molecules on the surface of a silicon nanowire field-effect transistor (SNWFET). The subthreshold current model was employed, and the capacitive coupling model of ideality factor was simplified, using a fully depleted SNWFET. We applied the analytical model to p-channel SNWFET with porphyrin, and extracted the distribution of the molecular interface states. There were 748 and 474 traps (average value) in length (L) = 300 nm and L = 500 nm devices, respectively. The trap energy was in the range of 0.27-0.35 eV.

AB - We modeled and extracted the distribution of interface trap density by grafted molecules on the surface of a silicon nanowire field-effect transistor (SNWFET). The subthreshold current model was employed, and the capacitive coupling model of ideality factor was simplified, using a fully depleted SNWFET. We applied the analytical model to p-channel SNWFET with porphyrin, and extracted the distribution of the molecular interface states. There were 748 and 474 traps (average value) in length (L) = 300 nm and L = 500 nm devices, respectively. The trap energy was in the range of 0.27-0.35 eV.

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DO - 10.1063/1.4834995

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Capacitive coupling model and extraction of the molecular interface states in porphyrin-silicon nanowire hybrid field-effect transistor

Abstract

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