Abstract
We modeled and extracted the distribution of interface trap density by grafted molecules on the surface of a silicon nanowire field-effect transistor (SNWFET). The subthreshold current model was employed, and the capacitive coupling model of ideality factor was simplified, using a fully depleted SNWFET. We applied the analytical model to p-channel SNWFET with porphyrin, and extracted the distribution of the molecular interface states. There were 748 and 474 traps (average value) in length (L) = 300 nm and L = 500 nm devices, respectively. The trap energy was in the range of 0.27-0.35 eV.
Original language | English |
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Article number | 233104 |
Journal | Applied Physics Letters |
Volume | 103 |
Issue number | 23 |
DOIs | |
Publication status | Published - 2013 Dec 2 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)