Carbon- and oxygen-free Cu(InGa)(SSe)2 solar cell with a 4.63% conversion efficiency by electrostatic spray deposition

Hyun Yoon; Seung Heon Na; Jae Young Choi; Min Woo Kim; Hayong Kim; Hee Sang An; Byoung Koun Min; Sejin Ahn; Jae Ho Yun; Jihye Gwak; Kyunghoon Yoon; Sanjay S. Kolekar; Maikel F.A.M. Van Hest; Salem S. Al-Deyab; Mark T. Swihart; Sam S. Yoon

doi:10.1021/am501286d

Carbon- and oxygen-free Cu(InGa)(SSe)₂ solar cell with a 4.63% conversion efficiency by electrostatic spray deposition

Hyun Yoon, Seung Heon Na, Jae Young Choi, Min Woo Kim, Hayong Kim, Hee Sang An, Byoung Koun Min, Sejin Ahn, Jae Ho Yun, Jihye Gwak, Kyunghoon Yoon, Sanjay S. Kolekar, Maikel F.A.M. Van Hest, Salem S. Al-Deyab, Mark T. Swihart, Sam S. Yoon

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

We have demonstrated the first example of carbon- and oxygen-free Cu(In,Ga)(SSe)₂ (CIGSSe) absorber layers prepared by electrospraying a CuInGa (CIG) precursor followed by annealing, sulfurization, and selenization at elevated temperature. X-ray diffraction and scanning electron microscopy showed that the amorphous as-deposited (CIG) precursor film was converted into polycrystalline CIGSSe with a flat-grained morphology after post-treatment. The optimal post-treatment temperature was 300 °C for annealing and 500 °C for both sulfurization and selenization, with a ramp rate of 5 °C/min. The carbon impurities in the precursor film were removed by air annealing, and oxide that was formed during annealing was removed by sulfurization. The fabricated CIGSSe solar cell showed a conversion efficiency of 4.63% for a 0.44 cm ² area, with V_oc = 0.4 V, J_sc = 21 mA/cm ², and FF = 0.53.

Original language	English
Pages (from-to)	8369-8377
Number of pages	9
Journal	ACS Applied Materials and Interfaces
Volume	6
Issue number	11
DOIs	https://doi.org/10.1021/am501286d
Publication status	Published - 2014 Jun 11

Keywords

CIGSSe
carbon free
electrostatic spray
oxygen free
solar cell
thin film

ASJC Scopus subject areas

General Materials Science

Access to Document

10.1021/am501286d

Cite this

Yoon, H., Na, S. H., Choi, J. Y., Kim, M. W., Kim, H., An, H. S., Min, B. K., Ahn, S., Yun, J. H., Gwak, J., Yoon, K., Kolekar, S. S., Van Hest, M. F. A. M., Al-Deyab, S. S., Swihart, M. T., & Yoon, S. S. (2014). Carbon- and oxygen-free Cu(InGa)(SSe)₂ solar cell with a 4.63% conversion efficiency by electrostatic spray deposition. ACS Applied Materials and Interfaces, 6(11), 8369-8377. https://doi.org/10.1021/am501286d

Yoon, H, Na, SH, Choi, JY, Kim, MW, Kim, H, An, HS, Min, BK, Ahn, S, Yun, JH, Gwak, J, Yoon, K, Kolekar, SS, Van Hest, MFAM, Al-Deyab, SS, Swihart, MT & Yoon, SS 2014, 'Carbon- and oxygen-free Cu(InGa)(SSe)₂ solar cell with a 4.63% conversion efficiency by electrostatic spray deposition', ACS Applied Materials and Interfaces, vol. 6, no. 11, pp. 8369-8377. https://doi.org/10.1021/am501286d

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title = "Carbon- and oxygen-free Cu(InGa)(SSe)2 solar cell with a 4.63% conversion efficiency by electrostatic spray deposition",

abstract = "We have demonstrated the first example of carbon- and oxygen-free Cu(In,Ga)(SSe)2 (CIGSSe) absorber layers prepared by electrospraying a CuInGa (CIG) precursor followed by annealing, sulfurization, and selenization at elevated temperature. X-ray diffraction and scanning electron microscopy showed that the amorphous as-deposited (CIG) precursor film was converted into polycrystalline CIGSSe with a flat-grained morphology after post-treatment. The optimal post-treatment temperature was 300 °C for annealing and 500 °C for both sulfurization and selenization, with a ramp rate of 5 °C/min. The carbon impurities in the precursor film were removed by air annealing, and oxide that was formed during annealing was removed by sulfurization. The fabricated CIGSSe solar cell showed a conversion efficiency of 4.63% for a 0.44 cm 2 area, with Voc = 0.4 V, Jsc = 21 mA/cm 2, and FF = 0.53.",

keywords = "CIGSSe, carbon free, electrostatic spray, oxygen free, solar cell, thin film",

author = "Hyun Yoon and Na, {Seung Heon} and Choi, {Jae Young} and Kim, {Min Woo} and Hayong Kim and An, {Hee Sang} and Min, {Byoung Koun} and Sejin Ahn and Yun, {Jae Ho} and Jihye Gwak and Kyunghoon Yoon and Kolekar, {Sanjay S.} and {Van Hest}, {Maikel F.A.M.} and Al-Deyab, {Salem S.} and Swihart, {Mark T.} and Yoon, {Sam S.}",

year = "2014",

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doi = "10.1021/am501286d",

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T1 - Carbon- and oxygen-free Cu(InGa)(SSe)2 solar cell with a 4.63% conversion efficiency by electrostatic spray deposition

AU - Yoon, Hyun

AU - Na, Seung Heon

AU - Choi, Jae Young

AU - Kim, Min Woo

AU - Kim, Hayong

AU - An, Hee Sang

AU - Min, Byoung Koun

AU - Ahn, Sejin

AU - Yun, Jae Ho

AU - Gwak, Jihye

AU - Yoon, Kyunghoon

AU - Kolekar, Sanjay S.

AU - Van Hest, Maikel F.A.M.

AU - Al-Deyab, Salem S.

AU - Swihart, Mark T.

AU - Yoon, Sam S.

PY - 2014/6/11

Y1 - 2014/6/11

N2 - We have demonstrated the first example of carbon- and oxygen-free Cu(In,Ga)(SSe)2 (CIGSSe) absorber layers prepared by electrospraying a CuInGa (CIG) precursor followed by annealing, sulfurization, and selenization at elevated temperature. X-ray diffraction and scanning electron microscopy showed that the amorphous as-deposited (CIG) precursor film was converted into polycrystalline CIGSSe with a flat-grained morphology after post-treatment. The optimal post-treatment temperature was 300 °C for annealing and 500 °C for both sulfurization and selenization, with a ramp rate of 5 °C/min. The carbon impurities in the precursor film were removed by air annealing, and oxide that was formed during annealing was removed by sulfurization. The fabricated CIGSSe solar cell showed a conversion efficiency of 4.63% for a 0.44 cm 2 area, with Voc = 0.4 V, Jsc = 21 mA/cm 2, and FF = 0.53.

AB - We have demonstrated the first example of carbon- and oxygen-free Cu(In,Ga)(SSe)2 (CIGSSe) absorber layers prepared by electrospraying a CuInGa (CIG) precursor followed by annealing, sulfurization, and selenization at elevated temperature. X-ray diffraction and scanning electron microscopy showed that the amorphous as-deposited (CIG) precursor film was converted into polycrystalline CIGSSe with a flat-grained morphology after post-treatment. The optimal post-treatment temperature was 300 °C for annealing and 500 °C for both sulfurization and selenization, with a ramp rate of 5 °C/min. The carbon impurities in the precursor film were removed by air annealing, and oxide that was formed during annealing was removed by sulfurization. The fabricated CIGSSe solar cell showed a conversion efficiency of 4.63% for a 0.44 cm 2 area, with Voc = 0.4 V, Jsc = 21 mA/cm 2, and FF = 0.53.

KW - CIGSSe

KW - carbon free

KW - electrostatic spray

KW - oxygen free

KW - solar cell

KW - thin film

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