Carrier-mediated antiferromagnetic interlayer exchange coupling in diluted magnetic semiconductor multilayers Ga1-xMnxAs/GaAs:Be

J. H. Chung; S. J. Chung; Sanghoon Lee; B. J. Kirby; J. A. Borchers; Y. J. Cho; X. Liu; J. K. Furdyna

doi:10.1103/PhysRevLett.101.237202

Carrier-mediated antiferromagnetic interlayer exchange coupling in diluted magnetic semiconductor multilayers Ga1-xMnxAs/GaAs:Be

J. H. Chung, S. J. Chung, Sanghoon Lee, B. J. Kirby, J. A. Borchers, Y. J. Cho, X. Liu, J. K. Furdyna

Research output: Contribution to journal › Article › peer-review

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Abstract

We report the antiferromagnetic (AFM) interlayer exchange coupling between Ga0.97Mn0.03As ferromagnetic semiconductor layers separated by Be-doped GaAs spacers. Polarized neutron reflectivity reveals a characteristic splitting at the wave vector corresponding to twice the multilayer period, indicating that the coupling between the ferromagnetic layers is AFM. When the applied field is increased to above the saturation field, this AFM coupling is suppressed. This behavior is not observed when the spacers are undoped, suggesting that the observed AFM coupling is mediated by doped charge carriers.

Original language	English
Article number	237202
Journal	Physical review letters
Volume	101
Issue number	23
DOIs	https://doi.org/10.1103/PhysRevLett.101.237202
Publication status	Published - 2008 Dec 2

ASJC Scopus subject areas

General Physics and Astronomy

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10.1103/PhysRevLett.101.237202

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title = "Carrier-mediated antiferromagnetic interlayer exchange coupling in diluted magnetic semiconductor multilayers Ga1-xMnxAs/GaAs:Be",

abstract = "We report the antiferromagnetic (AFM) interlayer exchange coupling between Ga0.97Mn0.03As ferromagnetic semiconductor layers separated by Be-doped GaAs spacers. Polarized neutron reflectivity reveals a characteristic splitting at the wave vector corresponding to twice the multilayer period, indicating that the coupling between the ferromagnetic layers is AFM. When the applied field is increased to above the saturation field, this AFM coupling is suppressed. This behavior is not observed when the spacers are undoped, suggesting that the observed AFM coupling is mediated by doped charge carriers.",

author = "Chung, {J. H.} and Chung, {S. J.} and Sanghoon Lee and Kirby, {B. J.} and Borchers, {J. A.} and Cho, {Y. J.} and X. Liu and Furdyna, {J. K.}",

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AU - Chung, J. H.

AU - Chung, S. J.

AU - Lee, Sanghoon

AU - Kirby, B. J.

AU - Borchers, J. A.

AU - Cho, Y. J.

AU - Liu, X.

AU - Furdyna, J. K.

PY - 2008/12/2

Y1 - 2008/12/2

N2 - We report the antiferromagnetic (AFM) interlayer exchange coupling between Ga0.97Mn0.03As ferromagnetic semiconductor layers separated by Be-doped GaAs spacers. Polarized neutron reflectivity reveals a characteristic splitting at the wave vector corresponding to twice the multilayer period, indicating that the coupling between the ferromagnetic layers is AFM. When the applied field is increased to above the saturation field, this AFM coupling is suppressed. This behavior is not observed when the spacers are undoped, suggesting that the observed AFM coupling is mediated by doped charge carriers.

AB - We report the antiferromagnetic (AFM) interlayer exchange coupling between Ga0.97Mn0.03As ferromagnetic semiconductor layers separated by Be-doped GaAs spacers. Polarized neutron reflectivity reveals a characteristic splitting at the wave vector corresponding to twice the multilayer period, indicating that the coupling between the ferromagnetic layers is AFM. When the applied field is increased to above the saturation field, this AFM coupling is suppressed. This behavior is not observed when the spacers are undoped, suggesting that the observed AFM coupling is mediated by doped charge carriers.

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Carrier-mediated antiferromagnetic interlayer exchange coupling in diluted magnetic semiconductor multilayers Ga1-xMnxAs/GaAs:Be

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