Carrier removal rate in the n + emitter and p - base layers in lattice-mismatched In 0.56Ga 0.44P solar cells under 1-MeV-electron irradiation was studied. Standard capacitance-voltage techniques were used to determine the change in carrier concentration in the base layer. The carrier removal in the 1 × 10 17 cm -3 p - material was observed to be at a rate R c = 1.3 cm -1, which was consistent with that of lattice-mismatched InGaP. carrier concentration in the 2 × 10 18 cm -3 n + emitter layer was reduced to 1 × 10 18 cm -3 after exposure to an electron fluence.
Bibliographical noteFunding Information:
N.J.E.D. gratefully acknowledges the financial support of a fellowship from the Japan Society for the Promotion of Science (JSPS) and would also like to thank Dr. S. Kawakita for assistance with the sample irradiation and Dr. M. Mazzer for advice on EBIC microscopy. The anonymous reviewers are also thanked for their valuable comments.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)