Carrier removal rates and deep traps in neutron irradiated n-GaN films

In Hwan Lee; A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; E. A. Kozhukhova; N. G. Kolin; V. M. Boiko; A. V. Korulin; S. J. Pearton

doi:10.1149/1.3607986

Carrier removal rates and deep traps in neutron irradiated n-GaN films

In Hwan Lee^*
, A. Y. Polyakov
, N. B. Smirnov
, A. V. Govorkov
, E. A. Kozhukhova
, N. G. Kolin
, V. M. Boiko
, A. V. Korulin
, S. J. Pearton

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

Carrier removal rates and deep trap spectra were measured in neutron irradiated n-GaN samples grown by metalorganic chemical vapor deposition (MOCVD), hydride vapor phase epitaxy (HVPE, and epitaxial lateral overgrowth (ELOG). The carrier removal rates were found to significantly increase with donor doping and to decrease in the sequence MOCVD/ ELOG/ HVPE. The most prominent traps created by irradiation were quasi-hole traps with energy 0.6-0.7 eV and electron traps with energy 0.45 eV. The former were associated with disordered regions in GaN and determine the carrier removal rate in undoped films. The latter were attributed to radiation defect complexes with shallow donors.

Original language	English
Pages (from-to)	H866-H871
Journal	Journal of the Electrochemical Society
Volume	158
Issue number	9
DOIs	https://doi.org/10.1149/1.3607986
Publication status	Published - 2011
Externally published	Yes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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title = "Carrier removal rates and deep traps in neutron irradiated n-GaN films",

abstract = "Carrier removal rates and deep trap spectra were measured in neutron irradiated n-GaN samples grown by metalorganic chemical vapor deposition (MOCVD), hydride vapor phase epitaxy (HVPE, and epitaxial lateral overgrowth (ELOG). The carrier removal rates were found to significantly increase with donor doping and to decrease in the sequence MOCVD/ ELOG/ HVPE. The most prominent traps created by irradiation were quasi-hole traps with energy 0.6-0.7 eV and electron traps with energy 0.45 eV. The former were associated with disordered regions in GaN and determine the carrier removal rate in undoped films. The latter were attributed to radiation defect complexes with shallow donors.",

author = "Lee, \{In Hwan\} and Polyakov, \{A. Y.\} and Smirnov, \{N. B.\} and Govorkov, \{A. V.\} and Kozhukhova, \{E. A.\} and Kolin, \{N. G.\} and Boiko, \{V. M.\} and Korulin, \{A. V.\} and Pearton, \{S. J.\}",

year = "2011",

doi = "10.1149/1.3607986",

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TY - JOUR

T1 - Carrier removal rates and deep traps in neutron irradiated n-GaN films

AU - Lee, In Hwan

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Kozhukhova, E. A.

AU - Kolin, N. G.

AU - Boiko, V. M.

AU - Korulin, A. V.

AU - Pearton, S. J.

PY - 2011

Y1 - 2011

N2 - Carrier removal rates and deep trap spectra were measured in neutron irradiated n-GaN samples grown by metalorganic chemical vapor deposition (MOCVD), hydride vapor phase epitaxy (HVPE, and epitaxial lateral overgrowth (ELOG). The carrier removal rates were found to significantly increase with donor doping and to decrease in the sequence MOCVD/ ELOG/ HVPE. The most prominent traps created by irradiation were quasi-hole traps with energy 0.6-0.7 eV and electron traps with energy 0.45 eV. The former were associated with disordered regions in GaN and determine the carrier removal rate in undoped films. The latter were attributed to radiation defect complexes with shallow donors.

AB - Carrier removal rates and deep trap spectra were measured in neutron irradiated n-GaN samples grown by metalorganic chemical vapor deposition (MOCVD), hydride vapor phase epitaxy (HVPE, and epitaxial lateral overgrowth (ELOG). The carrier removal rates were found to significantly increase with donor doping and to decrease in the sequence MOCVD/ ELOG/ HVPE. The most prominent traps created by irradiation were quasi-hole traps with energy 0.6-0.7 eV and electron traps with energy 0.45 eV. The former were associated with disordered regions in GaN and determine the carrier removal rate in undoped films. The latter were attributed to radiation defect complexes with shallow donors.

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DO - 10.1149/1.3607986

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JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 9

ER -

Carrier removal rates and deep traps in neutron irradiated n-GaN films

Abstract

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ASJC Scopus subject areas

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