Abstract
Using polarization field effect-based thermionic field emission (PFE-TFE) model based on current-voltage-temperature data, possible carrier transport mechanisms for Pt/Au and Cr/Pd Schottky contacts to Al 0.25Ga 0.75N/GaN layers were investigated. Thermionic emission (TE) model was also investigated to compare to the PFE-TFE. It was shown that Schottky barrier heights (SBHs) are significantly affected by a polarization field-induced carrier density of the AlGaN layer. In addition, relatively little temperature dependence on the leakage current density of both contacts was found, which is in good agreement with the PFE-TFE model. The results indicate that the TFE is responsible for the current flow across the metal/AlGaN-GaN interface at T ≥ 293 K.
Original language | English |
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Pages (from-to) | 1081-1083 |
Number of pages | 3 |
Journal | Current Applied Physics |
Volume | 12 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2012 Jul |
Keywords
- AlGaN/GaN
- Carrier transport
- Schottky barrier height
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy(all)