Carrier transport mechanism of strained AlGaN/GaN Schottky contacts

Tae Chul Nam, Ja Soon Jang, Tae Yeon Seong

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18 Citations (Scopus)


Using polarization field effect-based thermionic field emission (PFE-TFE) model based on current-voltage-temperature data, possible carrier transport mechanisms for Pt/Au and Cr/Pd Schottky contacts to Al 0.25Ga 0.75N/GaN layers were investigated. Thermionic emission (TE) model was also investigated to compare to the PFE-TFE. It was shown that Schottky barrier heights (SBHs) are significantly affected by a polarization field-induced carrier density of the AlGaN layer. In addition, relatively little temperature dependence on the leakage current density of both contacts was found, which is in good agreement with the PFE-TFE model. The results indicate that the TFE is responsible for the current flow across the metal/AlGaN-GaN interface at T ≥ 293 K.

Original languageEnglish
Pages (from-to)1081-1083
Number of pages3
JournalCurrent Applied Physics
Issue number4
Publication statusPublished - 2012 Jul


  • AlGaN/GaN
  • Carrier transport
  • Schottky barrier height

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)


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