Carrier transport mechanism of strained AlGaN/GaN Schottky contacts

Tae Chul Nam; Ja Soon Jang; Tae Yeon Seong

doi:10.1016/j.cap.2012.01.010

Carrier transport mechanism of strained AlGaN/GaN Schottky contacts

Tae Chul Nam, Ja Soon Jang, Tae Yeon Seong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

Using polarization field effect-based thermionic field emission (PFE-TFE) model based on current-voltage-temperature data, possible carrier transport mechanisms for Pt/Au and Cr/Pd Schottky contacts to Al _0.25Ga _0.75N/GaN layers were investigated. Thermionic emission (TE) model was also investigated to compare to the PFE-TFE. It was shown that Schottky barrier heights (SBHs) are significantly affected by a polarization field-induced carrier density of the AlGaN layer. In addition, relatively little temperature dependence on the leakage current density of both contacts was found, which is in good agreement with the PFE-TFE model. The results indicate that the TFE is responsible for the current flow across the metal/AlGaN-GaN interface at T ≥ 293 K.

Original language	English
Pages (from-to)	1081-1083
Number of pages	3
Journal	Current Applied Physics
Volume	12
Issue number	4
DOIs	https://doi.org/10.1016/j.cap.2012.01.010
Publication status	Published - 2012 Jul

Keywords

AlGaN/GaN
Carrier transport
Schottky barrier height

ASJC Scopus subject areas

Materials Science(all)
Physics and Astronomy(all)

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10.1016/j.cap.2012.01.010

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@article{cbf24c3b2087413a89aa982c5e7ef831,

title = "Carrier transport mechanism of strained AlGaN/GaN Schottky contacts",

abstract = "Using polarization field effect-based thermionic field emission (PFE-TFE) model based on current-voltage-temperature data, possible carrier transport mechanisms for Pt/Au and Cr/Pd Schottky contacts to Al 0.25Ga 0.75N/GaN layers were investigated. Thermionic emission (TE) model was also investigated to compare to the PFE-TFE. It was shown that Schottky barrier heights (SBHs) are significantly affected by a polarization field-induced carrier density of the AlGaN layer. In addition, relatively little temperature dependence on the leakage current density of both contacts was found, which is in good agreement with the PFE-TFE model. The results indicate that the TFE is responsible for the current flow across the metal/AlGaN-GaN interface at T ≥ 293 K.",

keywords = "AlGaN/GaN, Carrier transport, Schottky barrier height",

author = "Nam, {Tae Chul} and Jang, {Ja Soon} and Seong, {Tae Yeon}",

note = "Funding Information: This work was partially supported by the Korea Technology Innovation Program (Grant no. of 10033630 ) and the Korea Industrial Strategic Technology Development Program (Grant no. of 208C000428 ) of the MKE. The authors also thank Yeungnam University for the financial support.",

year = "2012",

month = jul,

doi = "10.1016/j.cap.2012.01.010",

language = "English",

volume = "12",

pages = "1081--1083",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier",

number = "4",

}

TY - JOUR

T1 - Carrier transport mechanism of strained AlGaN/GaN Schottky contacts

AU - Nam, Tae Chul

AU - Jang, Ja Soon

AU - Seong, Tae Yeon

N1 - Funding Information: This work was partially supported by the Korea Technology Innovation Program (Grant no. of 10033630 ) and the Korea Industrial Strategic Technology Development Program (Grant no. of 208C000428 ) of the MKE. The authors also thank Yeungnam University for the financial support.

PY - 2012/7

Y1 - 2012/7

N2 - Using polarization field effect-based thermionic field emission (PFE-TFE) model based on current-voltage-temperature data, possible carrier transport mechanisms for Pt/Au and Cr/Pd Schottky contacts to Al 0.25Ga 0.75N/GaN layers were investigated. Thermionic emission (TE) model was also investigated to compare to the PFE-TFE. It was shown that Schottky barrier heights (SBHs) are significantly affected by a polarization field-induced carrier density of the AlGaN layer. In addition, relatively little temperature dependence on the leakage current density of both contacts was found, which is in good agreement with the PFE-TFE model. The results indicate that the TFE is responsible for the current flow across the metal/AlGaN-GaN interface at T ≥ 293 K.

AB - Using polarization field effect-based thermionic field emission (PFE-TFE) model based on current-voltage-temperature data, possible carrier transport mechanisms for Pt/Au and Cr/Pd Schottky contacts to Al 0.25Ga 0.75N/GaN layers were investigated. Thermionic emission (TE) model was also investigated to compare to the PFE-TFE. It was shown that Schottky barrier heights (SBHs) are significantly affected by a polarization field-induced carrier density of the AlGaN layer. In addition, relatively little temperature dependence on the leakage current density of both contacts was found, which is in good agreement with the PFE-TFE model. The results indicate that the TFE is responsible for the current flow across the metal/AlGaN-GaN interface at T ≥ 293 K.

KW - AlGaN/GaN

KW - Carrier transport

KW - Schottky barrier height

UR - http://www.scopus.com/inward/record.url?scp=84860221710&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2012.01.010

DO - 10.1016/j.cap.2012.01.010

M3 - Article

AN - SCOPUS:84860221710

SN - 1567-1739

VL - 12

SP - 1081

EP - 1083

JO - Current Applied Physics

JF - Current Applied Physics

IS - 4

ER -

Carrier transport mechanism of strained AlGaN/GaN Schottky contacts

Abstract

Keywords

ASJC Scopus subject areas

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