Carrier transport properties in high resistivity polycrystalline CdZnTe material

Ki Hyun Kim; Soo Yong Ahn; Se Young An; Jin Ki Hong; Yun Yi; Sun Ung Kim

doi:10.1016/j.cap.2006.09.001

Carrier transport properties in high resistivity polycrystalline CdZnTe material

Ki Hyun Kim, Soo Yong Ahn, Se Young An, Jin Ki Hong, Yun Yi, Sun Ung Kim

School of Health and Environmental Science

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

The electrical properties of polycrystalline CdZnTe (Zn = 4%) having high resistivity (3.3 × 10⁹ Ω cm) were investigated by using the time-of-flight technique. We have found that the average drift mobility of as-deposited polycrystalline CdZnTe samples is 1.21 cm²/V s and the electron trapping time is 4.6 μs. In a comparison of annealed samples at different conditions, the variation of resistivity in polycrystalline CdZnTe is considered to be mainly related to the fluctuation of carrier concentration, which originates from the change of density in deep level.

Original language	English
Pages (from-to)	296-299
Number of pages	4
Journal	Current Applied Physics
Volume	7
Issue number	3
DOIs	https://doi.org/10.1016/j.cap.2006.09.001
Publication status	Published - 2007 Mar

Keywords

Annealing
CdZnTe
Compensation
High resistivity
Mobility-lifetime product
Polycrystalline
Time-of-flight

ASJC Scopus subject areas

Materials Science(all)
Physics and Astronomy(all)

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10.1016/j.cap.2006.09.001

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title = "Carrier transport properties in high resistivity polycrystalline CdZnTe material",

abstract = "The electrical properties of polycrystalline CdZnTe (Zn = 4%) having high resistivity (3.3 × 109 Ω cm) were investigated by using the time-of-flight technique. We have found that the average drift mobility of as-deposited polycrystalline CdZnTe samples is 1.21 cm2/V s and the electron trapping time is 4.6 μs. In a comparison of annealed samples at different conditions, the variation of resistivity in polycrystalline CdZnTe is considered to be mainly related to the fluctuation of carrier concentration, which originates from the change of density in deep level.",

keywords = "Annealing, CdZnTe, Compensation, High resistivity, Mobility-lifetime product, Polycrystalline, Time-of-flight",

author = "Kim, {Ki Hyun} and Ahn, {Soo Yong} and An, {Se Young} and Hong, {Jin Ki} and Yun Yi and Kim, {Sun Ung}",

note = "Funding Information: This work was supported by Grant No. R01-2002-000-00271-0 from the Korea Science and Engineering Foundation. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

year = "2007",

month = mar,

doi = "10.1016/j.cap.2006.09.001",

language = "English",

volume = "7",

pages = "296--299",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier",

number = "3",

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TY - JOUR

T1 - Carrier transport properties in high resistivity polycrystalline CdZnTe material

AU - Kim, Ki Hyun

AU - Ahn, Soo Yong

AU - An, Se Young

AU - Hong, Jin Ki

AU - Yi, Yun

AU - Kim, Sun Ung

PY - 2007/3

Y1 - 2007/3

N2 - The electrical properties of polycrystalline CdZnTe (Zn = 4%) having high resistivity (3.3 × 109 Ω cm) were investigated by using the time-of-flight technique. We have found that the average drift mobility of as-deposited polycrystalline CdZnTe samples is 1.21 cm2/V s and the electron trapping time is 4.6 μs. In a comparison of annealed samples at different conditions, the variation of resistivity in polycrystalline CdZnTe is considered to be mainly related to the fluctuation of carrier concentration, which originates from the change of density in deep level.

AB - The electrical properties of polycrystalline CdZnTe (Zn = 4%) having high resistivity (3.3 × 109 Ω cm) were investigated by using the time-of-flight technique. We have found that the average drift mobility of as-deposited polycrystalline CdZnTe samples is 1.21 cm2/V s and the electron trapping time is 4.6 μs. In a comparison of annealed samples at different conditions, the variation of resistivity in polycrystalline CdZnTe is considered to be mainly related to the fluctuation of carrier concentration, which originates from the change of density in deep level.

KW - Annealing

KW - CdZnTe

KW - Compensation

KW - High resistivity

KW - Mobility-lifetime product

KW - Polycrystalline

KW - Time-of-flight

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DO - 10.1016/j.cap.2006.09.001

M3 - Article

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SN - 1567-1739

VL - 7

SP - 296

EP - 299

JO - Current Applied Physics

JF - Current Applied Physics

IS - 3

ER -

Carrier transport properties in high resistivity polycrystalline CdZnTe material

Abstract

Keywords

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