Carrier transport properties in high resistivity polycrystalline CdZnTe material

Ki Hyun Kim, Soo Yong Ahn, Se Young An, Jin Ki Hong, Yun Yi, Sun Ung Kim

    Research output: Contribution to journalArticlepeer-review

    12 Citations (Scopus)

    Abstract

    The electrical properties of polycrystalline CdZnTe (Zn = 4%) having high resistivity (3.3 × 109 Ω cm) were investigated by using the time-of-flight technique. We have found that the average drift mobility of as-deposited polycrystalline CdZnTe samples is 1.21 cm2/V s and the electron trapping time is 4.6 μs. In a comparison of annealed samples at different conditions, the variation of resistivity in polycrystalline CdZnTe is considered to be mainly related to the fluctuation of carrier concentration, which originates from the change of density in deep level.

    Original languageEnglish
    Pages (from-to)296-299
    Number of pages4
    JournalCurrent Applied Physics
    Volume7
    Issue number3
    DOIs
    Publication statusPublished - 2007 Mar

    Bibliographical note

    Funding Information:
    This work was supported by Grant No. R01-2002-000-00271-0 from the Korea Science and Engineering Foundation.

    Copyright:
    Copyright 2008 Elsevier B.V., All rights reserved.

    Keywords

    • Annealing
    • CdZnTe
    • Compensation
    • High resistivity
    • Mobility-lifetime product
    • Polycrystalline
    • Time-of-flight

    ASJC Scopus subject areas

    • General Materials Science
    • General Physics and Astronomy

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