The electrical properties of polycrystalline CdZnTe (Zn = 4%) having high resistivity (3.3 × 109 Ω cm) were investigated by using the time-of-flight technique. We have found that the average drift mobility of as-deposited polycrystalline CdZnTe samples is 1.21 cm2/V s and the electron trapping time is 4.6 μs. In a comparison of annealed samples at different conditions, the variation of resistivity in polycrystalline CdZnTe is considered to be mainly related to the fluctuation of carrier concentration, which originates from the change of density in deep level.
Bibliographical noteFunding Information:
This work was supported by Grant No. R01-2002-000-00271-0 from the Korea Science and Engineering Foundation.
Copyright 2008 Elsevier B.V., All rights reserved.
- High resistivity
- Mobility-lifetime product
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy(all)