Carrier-type modulation of tungsten diselenide (WSe2) field-effect transistors (FETs) via benzyl viologen (BV) doping

Soojin Kim, Chulmin Kim, Young Hyun Hwang, Seungwon Lee, Minjung Choi, Byeong Kwon Ju

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


With the advancement of technology based on low-dimensional materials, numerous attempts have been made to tune the semiconducting behavior of field-effect transistors to broaden their potential applications in various fields of electronics. Herein, a stable and site-selective method for the surface doping of tungsten diselenide devices is presented. Experimental results suggested that benzyl viologen doping induced a carrier-type transition effect on the device, and the electrical properties were successfully recovered after immersion in toluene solution. The recovered device was exposed to low-vacuum conditions for 10 d; no additional defects were observed on the interface.

Original languageEnglish
Article number138453
JournalChemical Physics Letters
Publication statusPublished - 2021 May

Bibliographical note

Publisher Copyright:
© 2021 Elsevier B.V.


  • Carrier type transition
  • Electrical properties
  • Electron doping
  • Field-effect transistors
  • WSe

ASJC Scopus subject areas

  • General Physics and Astronomy
  • Physical and Theoretical Chemistry


Dive into the research topics of 'Carrier-type modulation of tungsten diselenide (WSe2) field-effect transistors (FETs) via benzyl viologen (BV) doping'. Together they form a unique fingerprint.

Cite this