Abstract
With the advancement of technology based on low-dimensional materials, numerous attempts have been made to tune the semiconducting behavior of field-effect transistors to broaden their potential applications in various fields of electronics. Herein, a stable and site-selective method for the surface doping of tungsten diselenide devices is presented. Experimental results suggested that benzyl viologen doping induced a carrier-type transition effect on the device, and the electrical properties were successfully recovered after immersion in toluene solution. The recovered device was exposed to low-vacuum conditions for 10 d; no additional defects were observed on the interface.
Original language | English |
---|---|
Article number | 138453 |
Journal | Chemical Physics Letters |
Volume | 770 |
DOIs | |
Publication status | Published - 2021 May |
Keywords
- Carrier type transition
- Electrical properties
- Electron doping
- Field-effect transistors
- WSe
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physical and Theoretical Chemistry