Carrier-type modulation of tungsten diselenide (WSe2) field-effect transistors (FETs) via benzyl viologen (BV) doping

Soojin Kim; Chulmin Kim; Young Hyun Hwang; Seungwon Lee; Minjung Choi; Byeong Kwon Ju

doi:10.1016/j.cplett.2021.138453

Carrier-type modulation of tungsten diselenide (WSe₂) field-effect transistors (FETs) via benzyl viologen (BV) doping

Soojin Kim, Chulmin Kim, Young Hyun Hwang, Seungwon Lee, Minjung Choi, Byeong Kwon Ju

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

With the advancement of technology based on low-dimensional materials, numerous attempts have been made to tune the semiconducting behavior of field-effect transistors to broaden their potential applications in various fields of electronics. Herein, a stable and site-selective method for the surface doping of tungsten diselenide devices is presented. Experimental results suggested that benzyl viologen doping induced a carrier-type transition effect on the device, and the electrical properties were successfully recovered after immersion in toluene solution. The recovered device was exposed to low-vacuum conditions for 10 d; no additional defects were observed on the interface.

Original language	English
Article number	138453
Journal	Chemical Physics Letters
Volume	770
DOIs	https://doi.org/10.1016/j.cplett.2021.138453
Publication status	Published - 2021 May

Keywords

Carrier type transition
Electrical properties
Electron doping
Field-effect transistors
WSe

ASJC Scopus subject areas

Physics and Astronomy(all)
Physical and Theoretical Chemistry

Access to Document

10.1016/j.cplett.2021.138453

Cite this

@article{a7367e8e8be6431682fa687db68f4520,

title = "Carrier-type modulation of tungsten diselenide (WSe2) field-effect transistors (FETs) via benzyl viologen (BV) doping",

abstract = "With the advancement of technology based on low-dimensional materials, numerous attempts have been made to tune the semiconducting behavior of field-effect transistors to broaden their potential applications in various fields of electronics. Herein, a stable and site-selective method for the surface doping of tungsten diselenide devices is presented. Experimental results suggested that benzyl viologen doping induced a carrier-type transition effect on the device, and the electrical properties were successfully recovered after immersion in toluene solution. The recovered device was exposed to low-vacuum conditions for 10 d; no additional defects were observed on the interface.",

keywords = "Carrier type transition, Electrical properties, Electron doping, Field-effect transistors, WSe",

author = "Soojin Kim and Chulmin Kim and Hwang, {Young Hyun} and Seungwon Lee and Minjung Choi and Ju, {Byeong Kwon}",

note = "Funding Information: This work was supported by Samsung Electronics Co., Ltd . (No. IO201214-08159-01 ), the National Research Foundation of Korea (NRF) grant funded by the Korean Government (MSIT) (2019R1A2B5B01070286), and the Brain Korea 21 Project in 2021. Publisher Copyright: {\textcopyright} 2021 Elsevier B.V.",

year = "2021",

month = may,

doi = "10.1016/j.cplett.2021.138453",

language = "English",

volume = "770",

journal = "Chemical Physics Letters",

issn = "0009-2614",

publisher = "Elsevier",

}

TY - JOUR

T1 - Carrier-type modulation of tungsten diselenide (WSe2) field-effect transistors (FETs) via benzyl viologen (BV) doping

AU - Kim, Soojin

AU - Kim, Chulmin

AU - Hwang, Young Hyun

AU - Lee, Seungwon

AU - Choi, Minjung

AU - Ju, Byeong Kwon

N1 - Funding Information: This work was supported by Samsung Electronics Co., Ltd . (No. IO201214-08159-01 ), the National Research Foundation of Korea (NRF) grant funded by the Korean Government (MSIT) (2019R1A2B5B01070286), and the Brain Korea 21 Project in 2021. Publisher Copyright: © 2021 Elsevier B.V.

PY - 2021/5

Y1 - 2021/5

N2 - With the advancement of technology based on low-dimensional materials, numerous attempts have been made to tune the semiconducting behavior of field-effect transistors to broaden their potential applications in various fields of electronics. Herein, a stable and site-selective method for the surface doping of tungsten diselenide devices is presented. Experimental results suggested that benzyl viologen doping induced a carrier-type transition effect on the device, and the electrical properties were successfully recovered after immersion in toluene solution. The recovered device was exposed to low-vacuum conditions for 10 d; no additional defects were observed on the interface.

AB - With the advancement of technology based on low-dimensional materials, numerous attempts have been made to tune the semiconducting behavior of field-effect transistors to broaden their potential applications in various fields of electronics. Herein, a stable and site-selective method for the surface doping of tungsten diselenide devices is presented. Experimental results suggested that benzyl viologen doping induced a carrier-type transition effect on the device, and the electrical properties were successfully recovered after immersion in toluene solution. The recovered device was exposed to low-vacuum conditions for 10 d; no additional defects were observed on the interface.

KW - Carrier type transition

KW - Electrical properties

KW - Electron doping

KW - Field-effect transistors

KW - WSe

UR - http://www.scopus.com/inward/record.url?scp=85102602033&partnerID=8YFLogxK

U2 - 10.1016/j.cplett.2021.138453

DO - 10.1016/j.cplett.2021.138453

M3 - Article

AN - SCOPUS:85102602033

SN - 0009-2614

VL - 770

JO - Chemical Physics Letters

JF - Chemical Physics Letters

M1 - 138453

ER -