Carrier-type modulation of tungsten diselenide (WSe2) field-effect transistors (FETs) via benzyl viologen (BV) doping

Soojin Kim; Chulmin Kim; Young Hyun Hwang; Seungwon Lee; Minjung Choi; Byeong Kwon Ju

doi:10.1016/j.cplett.2021.138453

Carrier-type modulation of tungsten diselenide (WSe₂) field-effect transistors (FETs) via benzyl viologen (BV) doping

Soojin Kim, Chulmin Kim, Young Hyun Hwang, Seungwon Lee, Minjung Choi, Byeong Kwon Ju

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

With the advancement of technology based on low-dimensional materials, numerous attempts have been made to tune the semiconducting behavior of field-effect transistors to broaden their potential applications in various fields of electronics. Herein, a stable and site-selective method for the surface doping of tungsten diselenide devices is presented. Experimental results suggested that benzyl viologen doping induced a carrier-type transition effect on the device, and the electrical properties were successfully recovered after immersion in toluene solution. The recovered device was exposed to low-vacuum conditions for 10 d; no additional defects were observed on the interface.

Original language	English
Article number	138453
Journal	Chemical Physics Letters
Volume	770
DOIs	https://doi.org/10.1016/j.cplett.2021.138453
Publication status	Published - 2021 May

Bibliographical note

Publisher Copyright:
© 2021 Elsevier B.V.

Keywords

Carrier type transition
Electrical properties
Electron doping
Field-effect transistors
WSe

ASJC Scopus subject areas

General Physics and Astronomy
Physical and Theoretical Chemistry

Access to Document

10.1016/j.cplett.2021.138453

Cite this

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title = "Carrier-type modulation of tungsten diselenide (WSe2) field-effect transistors (FETs) via benzyl viologen (BV) doping",

abstract = "With the advancement of technology based on low-dimensional materials, numerous attempts have been made to tune the semiconducting behavior of field-effect transistors to broaden their potential applications in various fields of electronics. Herein, a stable and site-selective method for the surface doping of tungsten diselenide devices is presented. Experimental results suggested that benzyl viologen doping induced a carrier-type transition effect on the device, and the electrical properties were successfully recovered after immersion in toluene solution. The recovered device was exposed to low-vacuum conditions for 10 d; no additional defects were observed on the interface.",

keywords = "Carrier type transition, Electrical properties, Electron doping, Field-effect transistors, WSe",

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AU - Hwang, Young Hyun

AU - Lee, Seungwon

AU - Choi, Minjung

AU - Ju, Byeong Kwon

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AB - With the advancement of technology based on low-dimensional materials, numerous attempts have been made to tune the semiconducting behavior of field-effect transistors to broaden their potential applications in various fields of electronics. Herein, a stable and site-selective method for the surface doping of tungsten diselenide devices is presented. Experimental results suggested that benzyl viologen doping induced a carrier-type transition effect on the device, and the electrical properties were successfully recovered after immersion in toluene solution. The recovered device was exposed to low-vacuum conditions for 10 d; no additional defects were observed on the interface.

KW - Carrier type transition

KW - Electrical properties

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KW - Field-effect transistors

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