Carrier-type modulation of tungsten diselenide (WSe2) field-effect transistors (FETs) via benzyl viologen (BV) doping

Soojin Kim, Chulmin Kim, Young Hyun Hwang, Seungwon Lee, Minjung Choi, Byeong Kwon Ju

    Research output: Contribution to journalArticlepeer-review

    4 Citations (Scopus)

    Abstract

    With the advancement of technology based on low-dimensional materials, numerous attempts have been made to tune the semiconducting behavior of field-effect transistors to broaden their potential applications in various fields of electronics. Herein, a stable and site-selective method for the surface doping of tungsten diselenide devices is presented. Experimental results suggested that benzyl viologen doping induced a carrier-type transition effect on the device, and the electrical properties were successfully recovered after immersion in toluene solution. The recovered device was exposed to low-vacuum conditions for 10 d; no additional defects were observed on the interface.

    Original languageEnglish
    Article number138453
    JournalChemical Physics Letters
    Volume770
    DOIs
    Publication statusPublished - 2021 May

    Bibliographical note

    Publisher Copyright:
    © 2021 Elsevier B.V.

    Keywords

    • Carrier type transition
    • Electrical properties
    • Electron doping
    • Field-effect transistors
    • WSe

    ASJC Scopus subject areas

    • General Physics and Astronomy
    • Physical and Theoretical Chemistry

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