Carrier-type modulation of tungsten diselenide (WSe2) field-effect transistors (FETs) via benzyl viologen (BV) doping

Soojin Kim; Chulmin Kim; Young Hyun Hwang; Seungwon Lee; Minjung Choi; Byeong Kwon Ju

doi:10.1016/j.cplett.2021.138453

Carrier-type modulation of tungsten diselenide (WSe₂) field-effect transistors (FETs) via benzyl viologen (BV) doping

Soojin Kim
, Chulmin Kim
, Young Hyun Hwang
, Seungwon Lee
, Minjung Choi
, Byeong Kwon Ju^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

With the advancement of technology based on low-dimensional materials, numerous attempts have been made to tune the semiconducting behavior of field-effect transistors to broaden their potential applications in various fields of electronics. Herein, a stable and site-selective method for the surface doping of tungsten diselenide devices is presented. Experimental results suggested that benzyl viologen doping induced a carrier-type transition effect on the device, and the electrical properties were successfully recovered after immersion in toluene solution. The recovered device was exposed to low-vacuum conditions for 10 d; no additional defects were observed on the interface.

Original language	English
Article number	138453
Journal	Chemical Physics Letters
Volume	770
DOIs	https://doi.org/10.1016/j.cplett.2021.138453
Publication status	Published - 2021 May

Bibliographical note

Publisher Copyright:
© 2021 Elsevier B.V.

Keywords

Carrier type transition
Electrical properties
Electron doping
Field-effect transistors
WSe

ASJC Scopus subject areas

General Physics and Astronomy
Physical and Theoretical Chemistry

Access to Document

10.1016/j.cplett.2021.138453

Cite this

@article{a7367e8e8be6431682fa687db68f4520,

title = "Carrier-type modulation of tungsten diselenide (WSe2) field-effect transistors (FETs) via benzyl viologen (BV) doping",

abstract = "With the advancement of technology based on low-dimensional materials, numerous attempts have been made to tune the semiconducting behavior of field-effect transistors to broaden their potential applications in various fields of electronics. Herein, a stable and site-selective method for the surface doping of tungsten diselenide devices is presented. Experimental results suggested that benzyl viologen doping induced a carrier-type transition effect on the device, and the electrical properties were successfully recovered after immersion in toluene solution. The recovered device was exposed to low-vacuum conditions for 10 d; no additional defects were observed on the interface.",

keywords = "Carrier type transition, Electrical properties, Electron doping, Field-effect transistors, WSe",

author = "Soojin Kim and Chulmin Kim and Hwang, \{Young Hyun\} and Seungwon Lee and Minjung Choi and Ju, \{Byeong Kwon\}",

note = "Publisher Copyright: {\textcopyright} 2021 Elsevier B.V.",

year = "2021",

month = may,

doi = "10.1016/j.cplett.2021.138453",

language = "English",

volume = "770",

journal = "Chemical Physics Letters",

issn = "0009-2614",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Carrier-type modulation of tungsten diselenide (WSe2) field-effect transistors (FETs) via benzyl viologen (BV) doping

AU - Kim, Soojin

AU - Kim, Chulmin

AU - Hwang, Young Hyun

AU - Lee, Seungwon

AU - Choi, Minjung

AU - Ju, Byeong Kwon

PY - 2021/5

Y1 - 2021/5

N2 - With the advancement of technology based on low-dimensional materials, numerous attempts have been made to tune the semiconducting behavior of field-effect transistors to broaden their potential applications in various fields of electronics. Herein, a stable and site-selective method for the surface doping of tungsten diselenide devices is presented. Experimental results suggested that benzyl viologen doping induced a carrier-type transition effect on the device, and the electrical properties were successfully recovered after immersion in toluene solution. The recovered device was exposed to low-vacuum conditions for 10 d; no additional defects were observed on the interface.

AB - With the advancement of technology based on low-dimensional materials, numerous attempts have been made to tune the semiconducting behavior of field-effect transistors to broaden their potential applications in various fields of electronics. Herein, a stable and site-selective method for the surface doping of tungsten diselenide devices is presented. Experimental results suggested that benzyl viologen doping induced a carrier-type transition effect on the device, and the electrical properties were successfully recovered after immersion in toluene solution. The recovered device was exposed to low-vacuum conditions for 10 d; no additional defects were observed on the interface.

KW - Carrier type transition

KW - Electrical properties

KW - Electron doping

KW - Field-effect transistors

KW - WSe

UR - https://www.scopus.com/pages/publications/85102602033

U2 - 10.1016/j.cplett.2021.138453

DO - 10.1016/j.cplett.2021.138453

M3 - Article

AN - SCOPUS:85102602033

SN - 0009-2614

VL - 770

JO - Chemical Physics Letters

JF - Chemical Physics Letters

M1 - 138453

ER -