Abstract
Ca0.15Zr0.85O1.85 (CSZ) films were grown on Pt/Ti/SiO2/Si substrates at various temperatures using radio-frequency (RF) magnetron sputtering with a CaZrO3 target. Crystalline CSZ phase was formed in the film grown even at room temperature (RT). For the film grown at 300°C, a dielectric constant (k) of value 27.6 and a low tan δof 0.005 were obtained at 100 kHz, and a similar k value of 26.7 with a high Q-value of 646 was obtained at 2.0 GHz. This film also showed a large capacitance density (264 nF/cm2), a small TCC (75 ppm/°C at 100 kHz), a low leakage current (1.44×10-8 A/cm2 at 1.5 MV/cm), and a large breakdown field strength (2.25 MV/cm). Moreover, a 600 nm-thick CSZ film grown on polyimide substrate at RT satisfied all the ITRS 2016 requirements for a capacitor on an organic substrate. Therefore, the CSZ film, grown at a temperature ≤300°C, is a good candidate for use in embedded capacitors in printed circuit boards.
Original language | English |
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Pages (from-to) | 243-250 |
Number of pages | 8 |
Journal | Energy Harvesting and Systems |
Volume | 1 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2014 |
Bibliographical note
Funding Information:This work was supported by the Industrial Strategic Technology Development Program, 10041232, “Development of synthesis method of exfoliated inorganic nanosheets with a high dielectric constant of >300 and the corresponding thin films applicable for the fabrication of high performance MLCC” funded by the Ministry of Knowledge Economy (MKE, Korea).
Publisher Copyright:
© 2014 by De Gruyter 2014.
Keywords
- RF sputtering
- calcia-stabilized zirconia
- dielectric
- embedded capacitor
- thin film
ASJC Scopus subject areas
- Renewable Energy, Sustainability and the Environment
- Energy Engineering and Power Technology
- Electrical and Electronic Engineering
- Electrochemistry