Ca0.15Zr0.85O1.85Thin Film for Application to MIM Capacitor on Organic Substrate

Jin Seong Kim; Jae Min Han; Mi Ri Joung; Sang Hyo Kweon; Chong-Yun Kang; Jong Hoo Paik; Young Hun Jeong; Sahn Nahm

doi:10.1515/ehs-2014-0010

Ca_0.15Zr_0.85O_1.85Thin Film for Application to MIM Capacitor on Organic Substrate

Jin Seong Kim, Jae Min Han, Mi Ri Joung, Sang Hyo Kweon, Chong-Yun Kang, Jong Hoo Paik, Young Hun Jeong, Sahn Nahm

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Ca0.15Zr0.85O1.85 (CSZ) films were grown on Pt/Ti/SiO2/Si substrates at various temperatures using radio-frequency (RF) magnetron sputtering with a CaZrO3 target. Crystalline CSZ phase was formed in the film grown even at room temperature (RT). For the film grown at 300°C, a dielectric constant (k) of value 27.6 and a low tan δof 0.005 were obtained at 100 kHz, and a similar k value of 26.7 with a high Q-value of 646 was obtained at 2.0 GHz. This film also showed a large capacitance density (264 nF/cm2), a small TCC (75 ppm/°C at 100 kHz), a low leakage current (1.44×10-8 A/cm2 at 1.5 MV/cm), and a large breakdown field strength (2.25 MV/cm). Moreover, a 600 nm-thick CSZ film grown on polyimide substrate at RT satisfied all the ITRS 2016 requirements for a capacitor on an organic substrate. Therefore, the CSZ film, grown at a temperature ≤300°C, is a good candidate for use in embedded capacitors in printed circuit boards.

Original language	English
Pages (from-to)	243-250
Number of pages	8
Journal	Energy Harvesting and Systems
Volume	1
Issue number	3
DOIs	https://doi.org/10.1515/ehs-2014-0010
Publication status	Published - 2014

Bibliographical note

Funding Information:
This work was supported by the Industrial Strategic Technology Development Program, 10041232, “Development of synthesis method of exfoliated inorganic nanosheets with a high dielectric constant of >300 and the corresponding thin films applicable for the fabrication of high performance MLCC” funded by the Ministry of Knowledge Economy (MKE, Korea).

Publisher Copyright:
© 2014 by De Gruyter 2014.

Keywords

RF sputtering
calcia-stabilized zirconia
dielectric
embedded capacitor
thin film

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment
Energy Engineering and Power Technology
Electrical and Electronic Engineering
Electrochemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1515/ehs-2014-0010

Cite this

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title = "Ca0.15Zr0.85O1.85Thin Film for Application to MIM Capacitor on Organic Substrate",

abstract = "Ca0.15Zr0.85O1.85 (CSZ) films were grown on Pt/Ti/SiO2/Si substrates at various temperatures using radio-frequency (RF) magnetron sputtering with a CaZrO3 target. Crystalline CSZ phase was formed in the film grown even at room temperature (RT). For the film grown at 300°C, a dielectric constant (k) of value 27.6 and a low tan δof 0.005 were obtained at 100 kHz, and a similar k value of 26.7 with a high Q-value of 646 was obtained at 2.0 GHz. This film also showed a large capacitance density (264 nF/cm2), a small TCC (75 ppm/°C at 100 kHz), a low leakage current (1.44×10-8 A/cm2 at 1.5 MV/cm), and a large breakdown field strength (2.25 MV/cm). Moreover, a 600 nm-thick CSZ film grown on polyimide substrate at RT satisfied all the ITRS 2016 requirements for a capacitor on an organic substrate. Therefore, the CSZ film, grown at a temperature ≤300°C, is a good candidate for use in embedded capacitors in printed circuit boards. ",

keywords = "RF sputtering, calcia-stabilized zirconia, dielectric, embedded capacitor, thin film",

author = "Kim, {Jin Seong} and Han, {Jae Min} and Joung, {Mi Ri} and Kweon, {Sang Hyo} and Chong-Yun Kang and Paik, {Jong Hoo} and Jeong, {Young Hun} and Sahn Nahm",

note = "Funding Information: This work was supported by the Industrial Strategic Technology Development Program, 10041232, “Development of synthesis method of exfoliated inorganic nanosheets with a high dielectric constant of >300 and the corresponding thin films applicable for the fabrication of high performance MLCC” funded by the Ministry of Knowledge Economy (MKE, Korea). Publisher Copyright: {\textcopyright} 2014 by De Gruyter 2014.",

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T1 - Ca0.15Zr0.85O1.85Thin Film for Application to MIM Capacitor on Organic Substrate

AU - Kim, Jin Seong

AU - Han, Jae Min

AU - Joung, Mi Ri

AU - Kweon, Sang Hyo

AU - Kang, Chong-Yun

AU - Paik, Jong Hoo

AU - Jeong, Young Hun

AU - Nahm, Sahn

N1 - Funding Information: This work was supported by the Industrial Strategic Technology Development Program, 10041232, “Development of synthesis method of exfoliated inorganic nanosheets with a high dielectric constant of >300 and the corresponding thin films applicable for the fabrication of high performance MLCC” funded by the Ministry of Knowledge Economy (MKE, Korea). Publisher Copyright: © 2014 by De Gruyter 2014.

PY - 2014

Y1 - 2014

N2 - Ca0.15Zr0.85O1.85 (CSZ) films were grown on Pt/Ti/SiO2/Si substrates at various temperatures using radio-frequency (RF) magnetron sputtering with a CaZrO3 target. Crystalline CSZ phase was formed in the film grown even at room temperature (RT). For the film grown at 300°C, a dielectric constant (k) of value 27.6 and a low tan δof 0.005 were obtained at 100 kHz, and a similar k value of 26.7 with a high Q-value of 646 was obtained at 2.0 GHz. This film also showed a large capacitance density (264 nF/cm2), a small TCC (75 ppm/°C at 100 kHz), a low leakage current (1.44×10-8 A/cm2 at 1.5 MV/cm), and a large breakdown field strength (2.25 MV/cm). Moreover, a 600 nm-thick CSZ film grown on polyimide substrate at RT satisfied all the ITRS 2016 requirements for a capacitor on an organic substrate. Therefore, the CSZ film, grown at a temperature ≤300°C, is a good candidate for use in embedded capacitors in printed circuit boards.

AB - Ca0.15Zr0.85O1.85 (CSZ) films were grown on Pt/Ti/SiO2/Si substrates at various temperatures using radio-frequency (RF) magnetron sputtering with a CaZrO3 target. Crystalline CSZ phase was formed in the film grown even at room temperature (RT). For the film grown at 300°C, a dielectric constant (k) of value 27.6 and a low tan δof 0.005 were obtained at 100 kHz, and a similar k value of 26.7 with a high Q-value of 646 was obtained at 2.0 GHz. This film also showed a large capacitance density (264 nF/cm2), a small TCC (75 ppm/°C at 100 kHz), a low leakage current (1.44×10-8 A/cm2 at 1.5 MV/cm), and a large breakdown field strength (2.25 MV/cm). Moreover, a 600 nm-thick CSZ film grown on polyimide substrate at RT satisfied all the ITRS 2016 requirements for a capacitor on an organic substrate. Therefore, the CSZ film, grown at a temperature ≤300°C, is a good candidate for use in embedded capacitors in printed circuit boards.

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