Ca0.15Zr0.85O1.85Thin Film for Application to MIM Capacitor on Organic Substrate

Jin Seong Kim, Jae Min Han, Mi Ri Joung, Sang Hyo Kweon, Chong-Yun Kang, Jong Hoo Paik, Young Hun Jeong, Sahn Nahm

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Ca0.15Zr0.85O1.85 (CSZ) films were grown on Pt/Ti/SiO2/Si substrates at various temperatures using radio-frequency (RF) magnetron sputtering with a CaZrO3 target. Crystalline CSZ phase was formed in the film grown even at room temperature (RT). For the film grown at 300°C, a dielectric constant (k) of value 27.6 and a low tan δof 0.005 were obtained at 100 kHz, and a similar k value of 26.7 with a high Q-value of 646 was obtained at 2.0 GHz. This film also showed a large capacitance density (264 nF/cm2), a small TCC (75 ppm/°C at 100 kHz), a low leakage current (1.44×10-8 A/cm2 at 1.5 MV/cm), and a large breakdown field strength (2.25 MV/cm). Moreover, a 600 nm-thick CSZ film grown on polyimide substrate at RT satisfied all the ITRS 2016 requirements for a capacitor on an organic substrate. Therefore, the CSZ film, grown at a temperature ≤300°C, is a good candidate for use in embedded capacitors in printed circuit boards.

Original languageEnglish
Pages (from-to)243-250
Number of pages8
JournalEnergy Harvesting and Systems
Issue number3
Publication statusPublished - 2014


  • RF sputtering
  • calcia-stabilized zirconia
  • dielectric
  • embedded capacitor
  • thin film

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering
  • Electrochemistry


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