Catalytic synthesis and photoluminescence of gallium nitride nanowires

S. C. Lyu, O. H. Cha, E. K. Suh, H. Ruh, H. J. Lee, C. J. Lee

Research output: Contribution to journalArticlepeer-review

85 Citations (Scopus)


Single crystalline wurzite GaN nanowires were successfully synthesized on the NiO catalyzed alumina substrate through a simple thermal chemical vapor deposition method. The mixture of Ga and GaN powder was used as the source material of Ga for synthesizing GaN nanowires. The diameter of nanowires ranged 50-60 nm and the length was about hundreds of micrometers. The nanowires were single crystal with hexagonal wurzite structure. The peaks of Raman spectra of GaN nanowires appeared broadened and asymmetric compared with those of bulk GaN. PL spectra under excitation at 325 nm showed a strong emission at 3.315 eV from near band-edge transition and a broad weak emission at 2.695 eV related to deep level defects.

Original languageEnglish
Pages (from-to)136-140
Number of pages5
JournalChemical Physics Letters
Issue number1-2
Publication statusPublished - 2003 Jan 2
Externally publishedYes

Bibliographical note

Funding Information:
This work was supported by Center for Nanotubes and Nanostructured Composites at Sungkyunkwan University.

Copyright 2018 Elsevier B.V., All rights reserved.

ASJC Scopus subject areas

  • General Physics and Astronomy
  • Physical and Theoretical Chemistry


Dive into the research topics of 'Catalytic synthesis and photoluminescence of gallium nitride nanowires'. Together they form a unique fingerprint.

Cite this