Cathodoluminescence of diamond films grown on pretreated Si (001) substrates by microwave plasma chemical vapour deposition

Do Geun Kim; Tae Yeon Seong; Young Joon Baik; M. A. Stevens Kalceff; M. R. Phillips

doi:10.1016/s0925-9635(98)00279-9

Cathodoluminescence of diamond films grown on pretreated Si (001) substrates by microwave plasma chemical vapour deposition

Do Geun Kim, Tae Yeon Seong, Young Joon Baik, M. A. Stevens Kalceff, M. R. Phillips

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Diamond films were grown on a.c. bias-enhanced nucleated Si(001) wafers using different CH₄ concentrations by microwave plasma chemical vapour deposition. Cathodoluminescence (CL) spectra from the films exhibit emission components which are associated with defects such as neutral atomic vacancies, nitrogen-vacancy complexes and structural defects such as dislocations. The luminescence intensities of the related peaks were found to depend on the BEN and CH₄ concentrations. Comparison of the CL and SEM images indicates that a nitrogen-associated defect is primarily distributed in the {001} growth facets of the diamond grains. However, the structural defect-related centres are found to be located mainly near grain boundaries and {111} growth facets.

Original language	English
Pages (from-to)	712-716
Number of pages	5
Journal	Diamond and Related Materials
Volume	8
Issue number	2-5
DOIs	https://doi.org/10.1016/s0925-9635(98)00279-9
Publication status	Published - 1999 Mar
Externally published	Yes

Bibliographical note

Funding Information:
This work was supported in part by the Ministry of Science and Technology (Korea) (Chucheon Programme).

Keywords

Cathodoluminescence
Defects
Diamond films
Impurities

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
General Chemistry
Mechanical Engineering
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/s0925-9635(98)00279-9

Cite this

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title = "Cathodoluminescence of diamond films grown on pretreated Si (001) substrates by microwave plasma chemical vapour deposition",

abstract = "Diamond films were grown on a.c. bias-enhanced nucleated Si(001) wafers using different CH4 concentrations by microwave plasma chemical vapour deposition. Cathodoluminescence (CL) spectra from the films exhibit emission components which are associated with defects such as neutral atomic vacancies, nitrogen-vacancy complexes and structural defects such as dislocations. The luminescence intensities of the related peaks were found to depend on the BEN and CH4 concentrations. Comparison of the CL and SEM images indicates that a nitrogen-associated defect is primarily distributed in the {001} growth facets of the diamond grains. However, the structural defect-related centres are found to be located mainly near grain boundaries and {111} growth facets.",

keywords = "Cathodoluminescence, Defects, Diamond films, Impurities",

author = "Kim, {Do Geun} and Seong, {Tae Yeon} and Baik, {Young Joon} and {Stevens Kalceff}, {M. A.} and Phillips, {M. R.}",

note = "Funding Information: This work was supported in part by the Ministry of Science and Technology (Korea) (Chucheon Programme).",

year = "1999",

month = mar,

doi = "10.1016/s0925-9635(98)00279-9",

language = "English",

volume = "8",

pages = "712--716",

journal = "Diamond and Related Materials",

issn = "0925-9635",

publisher = "Elsevier B.V.",

number = "2-5",

}

TY - JOUR

T1 - Cathodoluminescence of diamond films grown on pretreated Si (001) substrates by microwave plasma chemical vapour deposition

AU - Kim, Do Geun

AU - Seong, Tae Yeon

AU - Baik, Young Joon

AU - Stevens Kalceff, M. A.

AU - Phillips, M. R.

N1 - Funding Information: This work was supported in part by the Ministry of Science and Technology (Korea) (Chucheon Programme).

PY - 1999/3

Y1 - 1999/3

N2 - Diamond films were grown on a.c. bias-enhanced nucleated Si(001) wafers using different CH4 concentrations by microwave plasma chemical vapour deposition. Cathodoluminescence (CL) spectra from the films exhibit emission components which are associated with defects such as neutral atomic vacancies, nitrogen-vacancy complexes and structural defects such as dislocations. The luminescence intensities of the related peaks were found to depend on the BEN and CH4 concentrations. Comparison of the CL and SEM images indicates that a nitrogen-associated defect is primarily distributed in the {001} growth facets of the diamond grains. However, the structural defect-related centres are found to be located mainly near grain boundaries and {111} growth facets.

AB - Diamond films were grown on a.c. bias-enhanced nucleated Si(001) wafers using different CH4 concentrations by microwave plasma chemical vapour deposition. Cathodoluminescence (CL) spectra from the films exhibit emission components which are associated with defects such as neutral atomic vacancies, nitrogen-vacancy complexes and structural defects such as dislocations. The luminescence intensities of the related peaks were found to depend on the BEN and CH4 concentrations. Comparison of the CL and SEM images indicates that a nitrogen-associated defect is primarily distributed in the {001} growth facets of the diamond grains. However, the structural defect-related centres are found to be located mainly near grain boundaries and {111} growth facets.

KW - Cathodoluminescence

KW - Defects

KW - Diamond films

KW - Impurities

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U2 - 10.1016/s0925-9635(98)00279-9

DO - 10.1016/s0925-9635(98)00279-9

M3 - Article

AN - SCOPUS:0032620586

SN - 0925-9635

VL - 8

SP - 712

EP - 716

JO - Diamond and Related Materials

JF - Diamond and Related Materials

IS - 2-5

ER -

Cathodoluminescence of diamond films grown on pretreated Si (001) substrates by microwave plasma chemical vapour deposition

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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