Abstract
We electrically and optically characterize a germanium resonator diode on silicon fabricated by integrating a germanium light emitting diode with a microdisk cavity. Diode current-voltage characteristics show a low ideality factor and a high on/off ratio. The optical transmission of the resonator features whispering gallery modes with quality factors of a few hundred. Direct band gap electroluminescence under continuous current injection shows a clear enhancement of emission by the cavity. At this stage, the pumping level is not high enough to cause linewidth narrowing and invert the material. A higher n-type activated doping of germanium is necessary to achieve lasing.
Original language | English |
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Article number | 211101 |
Journal | Applied Physics Letters |
Volume | 98 |
Issue number | 21 |
DOIs | |
Publication status | Published - 2011 May 23 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)