Cavity-enhanced direct band electroluminescence near 1550 nm from germanium microdisk resonator diode on silicon

Szu Lin Cheng; Gary Shambat; Jesse Lu; Hyun Yong Yu; Krishna Saraswat; Theodore I. Kamins; Jelena Vuckovic; Yoshio Nishi

doi:10.1063/1.3592837

Cavity-enhanced direct band electroluminescence near 1550 nm from germanium microdisk resonator diode on silicon

Szu Lin Cheng, Gary Shambat, Jesse Lu, Hyun Yong Yu, Krishna Saraswat, Theodore I. Kamins, Jelena Vuckovic, Yoshio Nishi

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

We electrically and optically characterize a germanium resonator diode on silicon fabricated by integrating a germanium light emitting diode with a microdisk cavity. Diode current-voltage characteristics show a low ideality factor and a high on/off ratio. The optical transmission of the resonator features whispering gallery modes with quality factors of a few hundred. Direct band gap electroluminescence under continuous current injection shows a clear enhancement of emission by the cavity. At this stage, the pumping level is not high enough to cause linewidth narrowing and invert the material. A higher n-type activated doping of germanium is necessary to achieve lasing.

Original language	English
Article number	211101
Journal	Applied Physics Letters
Volume	98
Issue number	21
DOIs	https://doi.org/10.1063/1.3592837
Publication status	Published - 2011 May 23
Externally published	Yes

Bibliographical note

Funding Information:
The work has been supported by Toshiba and the AFOSR MURI for Complex and Robust On-chip Nanophotonics (Dr. Gernot Pomrenke), Grant No. FA9550-09-1-0704. The authors acknowledge the support of SNF at Stanford under NNIN and the Interconnect Focus Center.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Cite this

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title = "Cavity-enhanced direct band electroluminescence near 1550 nm from germanium microdisk resonator diode on silicon",

abstract = "We electrically and optically characterize a germanium resonator diode on silicon fabricated by integrating a germanium light emitting diode with a microdisk cavity. Diode current-voltage characteristics show a low ideality factor and a high on/off ratio. The optical transmission of the resonator features whispering gallery modes with quality factors of a few hundred. Direct band gap electroluminescence under continuous current injection shows a clear enhancement of emission by the cavity. At this stage, the pumping level is not high enough to cause linewidth narrowing and invert the material. A higher n-type activated doping of germanium is necessary to achieve lasing.",

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AU - Cheng, Szu Lin

AU - Shambat, Gary

AU - Lu, Jesse

AU - Yu, Hyun Yong

AU - Saraswat, Krishna

AU - Kamins, Theodore I.

AU - Vuckovic, Jelena

AU - Nishi, Yoshio

N1 - Funding Information: The work has been supported by Toshiba and the AFOSR MURI for Complex and Robust On-chip Nanophotonics (Dr. Gernot Pomrenke), Grant No. FA9550-09-1-0704. The authors acknowledge the support of SNF at Stanford under NNIN and the Interconnect Focus Center.

PY - 2011/5/23

Y1 - 2011/5/23

N2 - We electrically and optically characterize a germanium resonator diode on silicon fabricated by integrating a germanium light emitting diode with a microdisk cavity. Diode current-voltage characteristics show a low ideality factor and a high on/off ratio. The optical transmission of the resonator features whispering gallery modes with quality factors of a few hundred. Direct band gap electroluminescence under continuous current injection shows a clear enhancement of emission by the cavity. At this stage, the pumping level is not high enough to cause linewidth narrowing and invert the material. A higher n-type activated doping of germanium is necessary to achieve lasing.

AB - We electrically and optically characterize a germanium resonator diode on silicon fabricated by integrating a germanium light emitting diode with a microdisk cavity. Diode current-voltage characteristics show a low ideality factor and a high on/off ratio. The optical transmission of the resonator features whispering gallery modes with quality factors of a few hundred. Direct band gap electroluminescence under continuous current injection shows a clear enhancement of emission by the cavity. At this stage, the pumping level is not high enough to cause linewidth narrowing and invert the material. A higher n-type activated doping of germanium is necessary to achieve lasing.

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Cavity-enhanced direct band electroluminescence near 1550 nm from germanium microdisk resonator diode on silicon

Abstract

Bibliographical note

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