CdSe self-assembled quantum dots grown on ZnMnSe diluted magnetic semiconductors with different Mn concentration

S. Lee; M. Dobrowolska; J. K. Furdyna

doi:10.1016/j.jcrysgro.2006.04.070

CdSe self-assembled quantum dots grown on ZnMnSe diluted magnetic semiconductors with different Mn concentration

S. Lee, M. Dobrowolska, J. K. Furdyna

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We have investigated magneto-optical properties of a series of CdSe self-assembled quantum dots (QDs) grown on the Zn_1-xMn_xSe diluted magnetic semiconductors (DMSs). The QDs are formed by depositing 2.5 ML CdSe layer on 1 μm thick Zn_1-xMn_xSe buffer layer prepared by molecular beam epitaxy (MBE). The Mn concentration x in the Zn_1-xMn_xSe buffer was varied from 0.05 to 0.25. The photoluminescence (PL) peaks from CdSe QDs and from Zn_1-xMn_xSe barrier are clearly observed at zero magnetic field. The PL position of CdSe QDs appears to be systematically shifted toward low energy with increasing Mn concentration in the Zn_1-xMn_xSe buffer layer. The PL intensity ratio of CdSe QDs with respect to the Zn_1-xMn_xSe barrier also monotonically increases with Mn concentration x. This systematic behavior observed in the series of CdSe/Zn_1-xMn_xSe QD systems indicates that the CdSe QD formation strongly depends on the Mn concentration of the Zn_1-xMn_xSe buffer layer. The observed large Zeeman shift of the QD system in the presence of magnetic field was discussed in terms of the wavefunction overlap of carriers with Mn ions in the barrier.

Original language	English
Pages (from-to)	311-314
Number of pages	4
Journal	Journal of Crystal Growth
Volume	292
Issue number	2
DOIs	https://doi.org/10.1016/j.jcrysgro.2006.04.070
Publication status	Published - 2006 Jul 1

Bibliographical note

Funding Information:
This work was supported by Korea Research Foundation Grant (KRF-2004-005-C00068), by the seoul R&DB Program, and by the Korea Science and Engineering Foundation (KOSEF) through the Quantum Functional Semiconductor Research Center (QSRC) at Dongguk University.

Keywords

A1. Low dimensional structures
A1. Quantum dot
B2. Semiconducting II-VI materials

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2006.04.070

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title = "CdSe self-assembled quantum dots grown on ZnMnSe diluted magnetic semiconductors with different Mn concentration",

abstract = "We have investigated magneto-optical properties of a series of CdSe self-assembled quantum dots (QDs) grown on the Zn1-xMnxSe diluted magnetic semiconductors (DMSs). The QDs are formed by depositing 2.5 ML CdSe layer on 1 μm thick Zn1-xMnxSe buffer layer prepared by molecular beam epitaxy (MBE). The Mn concentration x in the Zn1-xMnxSe buffer was varied from 0.05 to 0.25. The photoluminescence (PL) peaks from CdSe QDs and from Zn1-xMnxSe barrier are clearly observed at zero magnetic field. The PL position of CdSe QDs appears to be systematically shifted toward low energy with increasing Mn concentration in the Zn1-xMnxSe buffer layer. The PL intensity ratio of CdSe QDs with respect to the Zn1-xMnxSe barrier also monotonically increases with Mn concentration x. This systematic behavior observed in the series of CdSe/Zn1-xMnxSe QD systems indicates that the CdSe QD formation strongly depends on the Mn concentration of the Zn1-xMnxSe buffer layer. The observed large Zeeman shift of the QD system in the presence of magnetic field was discussed in terms of the wavefunction overlap of carriers with Mn ions in the barrier.",

keywords = "A1. Low dimensional structures, A1. Quantum dot, B2. Semiconducting II-VI materials",

author = "S. Lee and M. Dobrowolska and Furdyna, {J. K.}",

note = "Funding Information: This work was supported by Korea Research Foundation Grant (KRF-2004-005-C00068), by the seoul R&DB Program, and by the Korea Science and Engineering Foundation (KOSEF) through the Quantum Functional Semiconductor Research Center (QSRC) at Dongguk University.",

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doi = "10.1016/j.jcrysgro.2006.04.070",

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AU - Lee, S.

AU - Dobrowolska, M.

AU - Furdyna, J. K.

N1 - Funding Information: This work was supported by Korea Research Foundation Grant (KRF-2004-005-C00068), by the seoul R&DB Program, and by the Korea Science and Engineering Foundation (KOSEF) through the Quantum Functional Semiconductor Research Center (QSRC) at Dongguk University.

PY - 2006/7/1

Y1 - 2006/7/1

N2 - We have investigated magneto-optical properties of a series of CdSe self-assembled quantum dots (QDs) grown on the Zn1-xMnxSe diluted magnetic semiconductors (DMSs). The QDs are formed by depositing 2.5 ML CdSe layer on 1 μm thick Zn1-xMnxSe buffer layer prepared by molecular beam epitaxy (MBE). The Mn concentration x in the Zn1-xMnxSe buffer was varied from 0.05 to 0.25. The photoluminescence (PL) peaks from CdSe QDs and from Zn1-xMnxSe barrier are clearly observed at zero magnetic field. The PL position of CdSe QDs appears to be systematically shifted toward low energy with increasing Mn concentration in the Zn1-xMnxSe buffer layer. The PL intensity ratio of CdSe QDs with respect to the Zn1-xMnxSe barrier also monotonically increases with Mn concentration x. This systematic behavior observed in the series of CdSe/Zn1-xMnxSe QD systems indicates that the CdSe QD formation strongly depends on the Mn concentration of the Zn1-xMnxSe buffer layer. The observed large Zeeman shift of the QD system in the presence of magnetic field was discussed in terms of the wavefunction overlap of carriers with Mn ions in the barrier.

AB - We have investigated magneto-optical properties of a series of CdSe self-assembled quantum dots (QDs) grown on the Zn1-xMnxSe diluted magnetic semiconductors (DMSs). The QDs are formed by depositing 2.5 ML CdSe layer on 1 μm thick Zn1-xMnxSe buffer layer prepared by molecular beam epitaxy (MBE). The Mn concentration x in the Zn1-xMnxSe buffer was varied from 0.05 to 0.25. The photoluminescence (PL) peaks from CdSe QDs and from Zn1-xMnxSe barrier are clearly observed at zero magnetic field. The PL position of CdSe QDs appears to be systematically shifted toward low energy with increasing Mn concentration in the Zn1-xMnxSe buffer layer. The PL intensity ratio of CdSe QDs with respect to the Zn1-xMnxSe barrier also monotonically increases with Mn concentration x. This systematic behavior observed in the series of CdSe/Zn1-xMnxSe QD systems indicates that the CdSe QD formation strongly depends on the Mn concentration of the Zn1-xMnxSe buffer layer. The observed large Zeeman shift of the QD system in the presence of magnetic field was discussed in terms of the wavefunction overlap of carriers with Mn ions in the barrier.

KW - A1. Low dimensional structures

KW - A1. Quantum dot

KW - B2. Semiconducting II-VI materials

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CdSe self-assembled quantum dots grown on ZnMnSe diluted magnetic semiconductors with different Mn concentration

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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