Cerium oxide quantum dots (CeO2 QDs) decorated zinc oxide nanorods (ZnO NRs) heterostructures were grown by a combination of solvothermal and chemical bath deposition methods and used for dye sensitized solar cell (DSSC) applications. Transmission electron microscope images showed the formation of CeO2/ZnO NRs, where ~5 nm CeO2 QDs were decorated on ZnO NRs having 1-2.5 μm length and 100-150 nm width. Photoluminescence spectra showed the significant increase in UV emission after decoration of ZnO NRs with CeO2 QDs. DSSC results revealed that the ZnO NRs with CeO2 QDs leads to an increase in the open circuit voltage and fill factor and exhibited a maximum efficiency of 2.65 %, which was 2.01 times higher than that of unmodified ZnO NRs. The decoration of CeO 2 QDs on the ZnO NRs surface may lead to the formation of barrier layer and hindered the back electron transfer and thereby high light harvesting efficiency.
|Number of pages||6|
|Journal||Journal of Materials Science: Materials in Electronics|
|Publication status||Published - 2014 Jul|
Bibliographical noteFunding Information:
Acknowledgments This paper was supported by Research Funds of Korea University in 2013. This paper was also supported by BK21 plus program from Ministry of Education and Human-Resource Development, and National Research Foundation (NRF) grant funded by the Korea government (MEST) (NRF-2010-0019626, 2012R1A2A2 A01006787).
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering