Cesium Lead Bromide Quantum Dot Light-Emitting Field-Effect Transistors

Dae Kyu Kim; Dongsun Choi; Mihyeon Park; Kwang Seob Jeong; Jong Ho Choi

doi:10.1021/acsami.0c06904

Cesium Lead Bromide Quantum Dot Light-Emitting Field-Effect Transistors

Dae Kyu Kim, Dongsun Choi, Mihyeon Park, Kwang Seob Jeong, Jong Ho Choi

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Solution-processable perovskite quantum dots are considered as promising optical materials for light-emitting optoelectronics. Light-emitting field-effect transistors (LEFETs) that can be operated under a relatively lower potential with a high energy conversion efficiency are yet to be realized with perovskite quantum dots. Here, we present the CsPbBr₃ quantum dot-based LEFET. Surprisingly, unipolar transport characteristics with strong electroluminescence were observed at the interface of the CsPbBr₃ QD-LEFET along with an exceptionally wide recombination zone of 80 μm, an order of magnitude larger than that of organic/polymer LEFETs. Based on the systematic analysis for the electroluminescence of the CsPbBr₃ NC-LEFET, we revealed that the increased diffusion length determined by the majority carrier mobility and the lifetime well explains the remarkably wide recombination zone. Furthermore, it was found that the energy-level matching and transport geometry of the heterostructure also determine the charge distribution and recombination, substantially affecting the performance of the CsPbBr₃ QD LEFET.

Original language	English
Pages (from-to)	21944-21951
Number of pages	8
Journal	ACS Applied Materials and Interfaces
Volume	12
Issue number	19
DOIs	https://doi.org/10.1021/acsami.0c06904
Publication status	Published - 2020 May 13

Bibliographical note

Funding Information:
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF20100020209, NRF2017R1D1A1B03027893, and NRF2018R1D1A1A02085371) and the POSCO Science Fellowship of POSCO TJ Park Foundation.

Publisher Copyright:
Copyright © 2020 American Chemical Society.

Keywords

CsPbBr quantum dots
diffusion length
light-emitting field-effect transistor
organic/inorganic hybrid field-effect transistor
wide recombination zone

ASJC Scopus subject areas

Materials Science(all)

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10.1021/acsami.0c06904

Cite this

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title = "Cesium Lead Bromide Quantum Dot Light-Emitting Field-Effect Transistors",

abstract = "Solution-processable perovskite quantum dots are considered as promising optical materials for light-emitting optoelectronics. Light-emitting field-effect transistors (LEFETs) that can be operated under a relatively lower potential with a high energy conversion efficiency are yet to be realized with perovskite quantum dots. Here, we present the CsPbBr3 quantum dot-based LEFET. Surprisingly, unipolar transport characteristics with strong electroluminescence were observed at the interface of the CsPbBr3 QD-LEFET along with an exceptionally wide recombination zone of 80 μm, an order of magnitude larger than that of organic/polymer LEFETs. Based on the systematic analysis for the electroluminescence of the CsPbBr3 NC-LEFET, we revealed that the increased diffusion length determined by the majority carrier mobility and the lifetime well explains the remarkably wide recombination zone. Furthermore, it was found that the energy-level matching and transport geometry of the heterostructure also determine the charge distribution and recombination, substantially affecting the performance of the CsPbBr3 QD LEFET.",

keywords = "CsPbBr quantum dots, diffusion length, light-emitting field-effect transistor, organic/inorganic hybrid field-effect transistor, wide recombination zone",

author = "Kim, {Dae Kyu} and Dongsun Choi and Mihyeon Park and Jeong, {Kwang Seob} and Choi, {Jong Ho}",

note = "Funding Information: This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF20100020209, NRF2017R1D1A1B03027893, and NRF2018R1D1A1A02085371) and the POSCO Science Fellowship of POSCO TJ Park Foundation. Publisher Copyright: Copyright {\textcopyright} 2020 American Chemical Society.",

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language = "English",

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AU - Kim, Dae Kyu

AU - Choi, Dongsun

AU - Park, Mihyeon

AU - Jeong, Kwang Seob

AU - Choi, Jong Ho

N1 - Funding Information: This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF20100020209, NRF2017R1D1A1B03027893, and NRF2018R1D1A1A02085371) and the POSCO Science Fellowship of POSCO TJ Park Foundation. Publisher Copyright: Copyright © 2020 American Chemical Society.

PY - 2020/5/13

Y1 - 2020/5/13

N2 - Solution-processable perovskite quantum dots are considered as promising optical materials for light-emitting optoelectronics. Light-emitting field-effect transistors (LEFETs) that can be operated under a relatively lower potential with a high energy conversion efficiency are yet to be realized with perovskite quantum dots. Here, we present the CsPbBr3 quantum dot-based LEFET. Surprisingly, unipolar transport characteristics with strong electroluminescence were observed at the interface of the CsPbBr3 QD-LEFET along with an exceptionally wide recombination zone of 80 μm, an order of magnitude larger than that of organic/polymer LEFETs. Based on the systematic analysis for the electroluminescence of the CsPbBr3 NC-LEFET, we revealed that the increased diffusion length determined by the majority carrier mobility and the lifetime well explains the remarkably wide recombination zone. Furthermore, it was found that the energy-level matching and transport geometry of the heterostructure also determine the charge distribution and recombination, substantially affecting the performance of the CsPbBr3 QD LEFET.

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Cesium Lead Bromide Quantum Dot Light-Emitting Field-Effect Transistors

Abstract

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Keywords

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