Abstract
Solution-processable perovskite quantum dots are considered as promising optical materials for light-emitting optoelectronics. Light-emitting field-effect transistors (LEFETs) that can be operated under a relatively lower potential with a high energy conversion efficiency are yet to be realized with perovskite quantum dots. Here, we present the CsPbBr3 quantum dot-based LEFET. Surprisingly, unipolar transport characteristics with strong electroluminescence were observed at the interface of the CsPbBr3 QD-LEFET along with an exceptionally wide recombination zone of 80 μm, an order of magnitude larger than that of organic/polymer LEFETs. Based on the systematic analysis for the electroluminescence of the CsPbBr3 NC-LEFET, we revealed that the increased diffusion length determined by the majority carrier mobility and the lifetime well explains the remarkably wide recombination zone. Furthermore, it was found that the energy-level matching and transport geometry of the heterostructure also determine the charge distribution and recombination, substantially affecting the performance of the CsPbBr3 QD LEFET.
Original language | English |
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Pages (from-to) | 21944-21951 |
Number of pages | 8 |
Journal | ACS Applied Materials and Interfaces |
Volume | 12 |
Issue number | 19 |
DOIs | |
Publication status | Published - 2020 May 13 |
Bibliographical note
Publisher Copyright:Copyright © 2020 American Chemical Society.
Keywords
- CsPbBr quantum dots
- diffusion length
- light-emitting field-effect transistor
- organic/inorganic hybrid field-effect transistor
- wide recombination zone
ASJC Scopus subject areas
- General Materials Science