Challenging endeavor to integrate gallium and carbon via direct bonding to evolve GaN on diamond architecture

Jong Cheol Kim, Jinhyung Lee, Jongsik Kim, Rajiv K. Singh, Puneet Jawali, Ghatu Subhash, Haigun Lee, Arul Chakkaravarthi Arjunan

    Research output: Contribution to journalArticlepeer-review

    19 Citations (Scopus)

    Abstract

    This paper depicts efforts for fabricating GaN on diamond microstructure through direct bonding between Ga and C, while excluding the use of adhesive interlayer during spark plasma sintering (SPS) process. The resulting GaN on diamond architecture is seemingly successful, as suggested by macroscopic morphological observations. The microscopic inspection using high-resolution transmission electron microscopy (HRTEM), however, shows a unique, off-the-chart interlayer configuration, wherein the components are migrated, etched, or fused to tentatively form multiple crystal phases. These phases can be constructed based on their utmost stabilities among all possible phases thermodynamically driven under or near the SPS conditions.

    Original languageEnglish
    Pages (from-to)138-142
    Number of pages5
    JournalScripta Materialia
    Volume142
    DOIs
    Publication statusPublished - 2018 Jan 1

    Bibliographical note

    Publisher Copyright:
    © 2017

    Keywords

    • Direct bonding
    • GaN on diamond
    • Heat dissipation
    • Immiscibility between Ga and C
    • Spark plasma sintering

    ASJC Scopus subject areas

    • General Materials Science
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering
    • Metals and Alloys

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