Abstract
This paper depicts efforts for fabricating GaN on diamond microstructure through direct bonding between Ga and C, while excluding the use of adhesive interlayer during spark plasma sintering (SPS) process. The resulting GaN on diamond architecture is seemingly successful, as suggested by macroscopic morphological observations. The microscopic inspection using high-resolution transmission electron microscopy (HRTEM), however, shows a unique, off-the-chart interlayer configuration, wherein the components are migrated, etched, or fused to tentatively form multiple crystal phases. These phases can be constructed based on their utmost stabilities among all possible phases thermodynamically driven under or near the SPS conditions.
Original language | English |
---|---|
Pages (from-to) | 138-142 |
Number of pages | 5 |
Journal | Scripta Materialia |
Volume | 142 |
DOIs | |
Publication status | Published - 2018 Jan 1 |
Bibliographical note
Funding Information:This work was supported by National Science Foundation NSF SBIR Project (# 646586 ) and Department of Energy SBIR Project (# DE-SC000-6438 and # DE-SC000-7740 ).
Publisher Copyright:
© 2017
Keywords
- Direct bonding
- GaN on diamond
- Heat dissipation
- Immiscibility between Ga and C
- Spark plasma sintering
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys