Challenging endeavor to integrate gallium and carbon via direct bonding to evolve GaN on diamond architecture

Jong Cheol Kim, Jinhyung Lee, Jongsik Kim, Rajiv K. Singh, Puneet Jawali, Ghatu Subhash, Haigun Lee, Arul Chakkaravarthi Arjunan

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


This paper depicts efforts for fabricating GaN on diamond microstructure through direct bonding between Ga and C, while excluding the use of adhesive interlayer during spark plasma sintering (SPS) process. The resulting GaN on diamond architecture is seemingly successful, as suggested by macroscopic morphological observations. The microscopic inspection using high-resolution transmission electron microscopy (HRTEM), however, shows a unique, off-the-chart interlayer configuration, wherein the components are migrated, etched, or fused to tentatively form multiple crystal phases. These phases can be constructed based on their utmost stabilities among all possible phases thermodynamically driven under or near the SPS conditions.

Original languageEnglish
Pages (from-to)138-142
Number of pages5
JournalScripta Materialia
Publication statusPublished - 2018 Jan 1

Bibliographical note

Publisher Copyright:
© 2017


  • Direct bonding
  • GaN on diamond
  • Heat dissipation
  • Immiscibility between Ga and C
  • Spark plasma sintering

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys


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