Challenging endeavor to integrate gallium and carbon via direct bonding to evolve GaN on diamond architecture

Jong Cheol Kim; Jinhyung Lee; Jongsik Kim; Rajiv K. Singh; Puneet Jawali; Ghatu Subhash; Haigun Lee; Arul Chakkaravarthi Arjunan

doi:10.1016/j.scriptamat.2017.08.041

Challenging endeavor to integrate gallium and carbon via direct bonding to evolve GaN on diamond architecture

Jong Cheol Kim, Jinhyung Lee, Jongsik Kim, Rajiv K. Singh, Puneet Jawali, Ghatu Subhash, Haigun Lee, Arul Chakkaravarthi Arjunan

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

This paper depicts efforts for fabricating GaN on diamond microstructure through direct bonding between Ga and C, while excluding the use of adhesive interlayer during spark plasma sintering (SPS) process. The resulting GaN on diamond architecture is seemingly successful, as suggested by macroscopic morphological observations. The microscopic inspection using high-resolution transmission electron microscopy (HRTEM), however, shows a unique, off-the-chart interlayer configuration, wherein the components are migrated, etched, or fused to tentatively form multiple crystal phases. These phases can be constructed based on their utmost stabilities among all possible phases thermodynamically driven under or near the SPS conditions.

Original language	English
Pages (from-to)	138-142
Number of pages	5
Journal	Scripta Materialia
Volume	142
DOIs	https://doi.org/10.1016/j.scriptamat.2017.08.041
Publication status	Published - 2018 Jan 1

Bibliographical note

Funding Information:
This work was supported by National Science Foundation NSF SBIR Project (# 646586 ) and Department of Energy SBIR Project (# DE-SC000-6438 and # DE-SC000-7740 ).

Publisher Copyright:
© 2017

Keywords

Direct bonding
GaN on diamond
Heat dissipation
Immiscibility between Ga and C
Spark plasma sintering

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys

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10.1016/j.scriptamat.2017.08.041

Cite this

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title = "Challenging endeavor to integrate gallium and carbon via direct bonding to evolve GaN on diamond architecture",

abstract = "This paper depicts efforts for fabricating GaN on diamond microstructure through direct bonding between Ga and C, while excluding the use of adhesive interlayer during spark plasma sintering (SPS) process. The resulting GaN on diamond architecture is seemingly successful, as suggested by macroscopic morphological observations. The microscopic inspection using high-resolution transmission electron microscopy (HRTEM), however, shows a unique, off-the-chart interlayer configuration, wherein the components are migrated, etched, or fused to tentatively form multiple crystal phases. These phases can be constructed based on their utmost stabilities among all possible phases thermodynamically driven under or near the SPS conditions.",

keywords = "Direct bonding, GaN on diamond, Heat dissipation, Immiscibility between Ga and C, Spark plasma sintering",

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AU - Kim, Jong Cheol

AU - Lee, Jinhyung

AU - Kim, Jongsik

AU - Singh, Rajiv K.

AU - Jawali, Puneet

AU - Subhash, Ghatu

AU - Lee, Haigun

AU - Arjunan, Arul Chakkaravarthi

N1 - Funding Information: This work was supported by National Science Foundation NSF SBIR Project (# 646586 ) and Department of Energy SBIR Project (# DE-SC000-6438 and # DE-SC000-7740 ). Publisher Copyright: © 2017

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N2 - This paper depicts efforts for fabricating GaN on diamond microstructure through direct bonding between Ga and C, while excluding the use of adhesive interlayer during spark plasma sintering (SPS) process. The resulting GaN on diamond architecture is seemingly successful, as suggested by macroscopic morphological observations. The microscopic inspection using high-resolution transmission electron microscopy (HRTEM), however, shows a unique, off-the-chart interlayer configuration, wherein the components are migrated, etched, or fused to tentatively form multiple crystal phases. These phases can be constructed based on their utmost stabilities among all possible phases thermodynamically driven under or near the SPS conditions.

AB - This paper depicts efforts for fabricating GaN on diamond microstructure through direct bonding between Ga and C, while excluding the use of adhesive interlayer during spark plasma sintering (SPS) process. The resulting GaN on diamond architecture is seemingly successful, as suggested by macroscopic morphological observations. The microscopic inspection using high-resolution transmission electron microscopy (HRTEM), however, shows a unique, off-the-chart interlayer configuration, wherein the components are migrated, etched, or fused to tentatively form multiple crystal phases. These phases can be constructed based on their utmost stabilities among all possible phases thermodynamically driven under or near the SPS conditions.

KW - Direct bonding

KW - GaN on diamond

KW - Heat dissipation

KW - Immiscibility between Ga and C

KW - Spark plasma sintering

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JO - Scripta Materialia

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ER -

Challenging endeavor to integrate gallium and carbon via direct bonding to evolve GaN on diamond architecture

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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