Change in electrical characteristics of gallium phosphide nanowire transistors under different environments

Donghun Kang; Wanjun Park; Byungkye Kim; Jujin Kim; Cheoljin Lee

Change in electrical characteristics of gallium phosphide nanowire transistors under different environments

Donghun Kang, Wanjun Park, Byungkye Kim, Jujin Kim, Cheoljin Lee

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Gallium phosphide (GaP) nanowire transistors were fabricated in a back gated structure and their electrical characteristics were measured systematically in air and vacuum. Typically the transistors turn on at -7 to -5V in ambient air. However, in vacuum, a large Vth shift about ∼10V toward the negative gate bias was observed. Exposure to air for 48 hours shifts the Vth back to the original Vth in air, which implies a reversible Vth shift. We believe that the shift of Vth is associated with charge transfer between physically adsorbed O or OH species and the surface of GaP nanowire. The device operation can be explained by conventional n-channel depletion type MOSFET operation.

Original language	English
Title of host publication	2004 4th IEEE Conference on Nanotechnology
Pages	370-372
Number of pages	3
Publication status	Published - 2004
Externally published	Yes
Event	2004 4th IEEE Conference on Nanotechnology - Munich, Germany Duration: 2004 Aug 16 → 2004 Aug 19

Publication series

Name	2004 4th IEEE Conference on Nanotechnology

Other

Other	2004 4th IEEE Conference on Nanotechnology
Country/Territory	Germany
City	Munich
Period	04/8/16 → 04/8/19

Keywords

Environment effects
Gallium phosphide
Nano electronics
Nanowire transistors

ASJC Scopus subject areas

Engineering(all)

Cite this

@inproceedings{bf689785c0874351bf77ecaaf76f819b,

title = "Change in electrical characteristics of gallium phosphide nanowire transistors under different environments",

abstract = "Gallium phosphide (GaP) nanowire transistors were fabricated in a back gated structure and their electrical characteristics were measured systematically in air and vacuum. Typically the transistors turn on at -7 to -5V in ambient air. However, in vacuum, a large Vth shift about ∼10V toward the negative gate bias was observed. Exposure to air for 48 hours shifts the Vth back to the original Vth in air, which implies a reversible Vth shift. We believe that the shift of Vth is associated with charge transfer between physically adsorbed O or OH species and the surface of GaP nanowire. The device operation can be explained by conventional n-channel depletion type MOSFET operation.",

keywords = "Environment effects, Gallium phosphide, Nano electronics, Nanowire transistors",

author = "Donghun Kang and Wanjun Park and Byungkye Kim and Jujin Kim and Cheoljin Lee",

year = "2004",

language = "English",

isbn = "0780385365",

series = "2004 4th IEEE Conference on Nanotechnology",

pages = "370--372",

booktitle = "2004 4th IEEE Conference on Nanotechnology",

note = "2004 4th IEEE Conference on Nanotechnology ; Conference date: 16-08-2004 Through 19-08-2004",

}

TY - GEN

T1 - Change in electrical characteristics of gallium phosphide nanowire transistors under different environments

AU - Kang, Donghun

AU - Park, Wanjun

AU - Kim, Byungkye

AU - Kim, Jujin

AU - Lee, Cheoljin

PY - 2004

Y1 - 2004

N2 - Gallium phosphide (GaP) nanowire transistors were fabricated in a back gated structure and their electrical characteristics were measured systematically in air and vacuum. Typically the transistors turn on at -7 to -5V in ambient air. However, in vacuum, a large Vth shift about ∼10V toward the negative gate bias was observed. Exposure to air for 48 hours shifts the Vth back to the original Vth in air, which implies a reversible Vth shift. We believe that the shift of Vth is associated with charge transfer between physically adsorbed O or OH species and the surface of GaP nanowire. The device operation can be explained by conventional n-channel depletion type MOSFET operation.

AB - Gallium phosphide (GaP) nanowire transistors were fabricated in a back gated structure and their electrical characteristics were measured systematically in air and vacuum. Typically the transistors turn on at -7 to -5V in ambient air. However, in vacuum, a large Vth shift about ∼10V toward the negative gate bias was observed. Exposure to air for 48 hours shifts the Vth back to the original Vth in air, which implies a reversible Vth shift. We believe that the shift of Vth is associated with charge transfer between physically adsorbed O or OH species and the surface of GaP nanowire. The device operation can be explained by conventional n-channel depletion type MOSFET operation.

KW - Environment effects

KW - Gallium phosphide

KW - Nano electronics

KW - Nanowire transistors

UR - http://www.scopus.com/inward/record.url?scp=20344371512&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:20344371512

SN - 0780385365

T3 - 2004 4th IEEE Conference on Nanotechnology

SP - 370

EP - 372

BT - 2004 4th IEEE Conference on Nanotechnology

T2 - 2004 4th IEEE Conference on Nanotechnology

Y2 - 16 August 2004 through 19 August 2004

ER -

Change in electrical characteristics of gallium phosphide nanowire transistors under different environments

Abstract

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Keywords

ASJC Scopus subject areas

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