Channel Length-Dependent Operation of Ambipolar Schottky-Barrier Transistors on a Single Si Nanowire

So Jeong Park, Dae Young Jeon, Violetta Sessi, Jens Trommer, André Heinzig, Thomas Mikolajick, Gyu Tae Kim, Walter M. Weber

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


For use in flexible, printable, wearable electronics, Schottky-barrier field-effect transistors (SB-FETs) with various channel materials including low-dimensional nanomaterials have been considered so far due to their comparatively simple and cost-effective integration scheme free of junction and channel dopants. However, the electric conduction mechanism and the scaling properties underlying their performance differ significantly from those of conventional metal-oxide-semiconductor (MOS) field-effect transistors. Indeed, an understanding of channel length scaling and drain bias impact has not been elucidated sufficiently. Here, multiple ambipolar SB-FETs with different channel lengths have been fabricated on a single silicon nanowire ensuring a constant nanowire diameter. Their length scaling behavior is analyzed through drain current and transconductance contour maps, each depending on the drain and gate bias. The reduced gate control and extended drain field effect on Schottky junctions were observed in short channels. Activation energy measurements showed lower sensitive behavior of the Schottky barrier to gate bias in the short-channel device and confirmed the thinning of Schottky barrier width for electrons at the source interface with drain bias.

Original languageEnglish
Pages (from-to)43927-43932
Number of pages6
JournalACS Applied Materials and Interfaces
Issue number39
Publication statusPublished - 2020 Sept 30

Bibliographical note

Funding Information:
This work was supported by the DFG projects Repronano II (WE 4853/1-2, WE 4853/1-3, and MI 1247/6-2), the DFG cluster of Excellence Center for Advancing Electronics Dresden (CfAED), the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2016R1A6A3A11933511 and NRF-2017M3A7B4049167), the Future Semiconductor Device Technology Development Program (10067739) funded by the Ministry of Trade, Industry & Energy (MOTIE), the Korea Semiconductor Research Consortium (KSRC), the Korea Institute of Science and Technology (KIST) Institutional Program, and a Korea University Grant.

Publisher Copyright:
© 2020 American Chemical Society.


  • Schottky barrier
  • Si nanowire
  • ambipolar transistors
  • channel length scaling
  • current-voltage contour map
  • effective Schottky barrier height

ASJC Scopus subject areas

  • General Materials Science


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