Channel width dependence of electrical characteristics of a-Si:H TFTs under bending stresses

Hyungon Oh; Kyoungah Cho; Sangsig Kim

doi:10.1088/1361-6641/aa59a3

Channel width dependence of electrical characteristics of a-Si:H TFTs under bending stresses

Hyungon Oh, Kyoungah Cho, Sangsig Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

In this study, we investigate the electrical characteristics of bendable a-Si:H thin-film transistors (TFTs) with various channel widths as a function of bending stress. Compared with a narrower channel TFT, a wider channel TFT exhibits a stable performance even at a bending strain of 1.3%. Our stress and strain distribution analysis reveals an inverse relationship between the channel width and the channel stress. As the channel width widens from 8 to 50 μm, the stress experienced by the middle channel region decreases from 545 to 277 MPa. Moreover, a 50 μm-channel-width TFT operates stably even after a 15 000 bending cycle while the 8 μm-channel-width TFT fails to operate after a 2000 bending cycle.

Original language	English
Article number	045002
Journal	Semiconductor Science and Technology
Volume	32
Issue number	4
DOIs	https://doi.org/10.1088/1361-6641/aa59a3
Publication status	Published - 2017 Mar 6

Keywords

a-Si:H TFT
bendable TFT
bending stress
channel width

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/1361-6641/aa59a3

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title = "Channel width dependence of electrical characteristics of a-Si:H TFTs under bending stresses",

abstract = "In this study, we investigate the electrical characteristics of bendable a-Si:H thin-film transistors (TFTs) with various channel widths as a function of bending stress. Compared with a narrower channel TFT, a wider channel TFT exhibits a stable performance even at a bending strain of 1.3%. Our stress and strain distribution analysis reveals an inverse relationship between the channel width and the channel stress. As the channel width widens from 8 to 50 μm, the stress experienced by the middle channel region decreases from 545 to 277 MPa. Moreover, a 50 μm-channel-width TFT operates stably even after a 15 000 bending cycle while the 8 μm-channel-width TFT fails to operate after a 2000 bending cycle.",

keywords = "a-Si:H TFT, bendable TFT, bending stress, channel width",

author = "Hyungon Oh and Kyoungah Cho and Sangsig Kim",

note = "Funding Information: This work was supported in part by the Mid-career Researcher Program (No. NRF-2013R1A2A1A03070750, NRF-2015R1A2A1A15055437), Grant funded by the Korean Government (MSIP) (No. NRF-2015R1A5A7037674) and Basic Science Research Program (No. NRF-2015R1D1A1A01057641) through the National Research Foundation of Korea (NRF), funded by the Ministry of Education, Science and Technology, Samsung Display Co. Ltd, the Brain Korea 21 Plus Project in 2016, and a Korea University Grant. Publisher Copyright: {\textcopyright} 2017 IOP Publishing Ltd.",

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doi = "10.1088/1361-6641/aa59a3",

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AU - Oh, Hyungon

AU - Cho, Kyoungah

AU - Kim, Sangsig

N1 - Funding Information: This work was supported in part by the Mid-career Researcher Program (No. NRF-2013R1A2A1A03070750, NRF-2015R1A2A1A15055437), Grant funded by the Korean Government (MSIP) (No. NRF-2015R1A5A7037674) and Basic Science Research Program (No. NRF-2015R1D1A1A01057641) through the National Research Foundation of Korea (NRF), funded by the Ministry of Education, Science and Technology, Samsung Display Co. Ltd, the Brain Korea 21 Plus Project in 2016, and a Korea University Grant. Publisher Copyright: © 2017 IOP Publishing Ltd.

PY - 2017/3/6

Y1 - 2017/3/6

N2 - In this study, we investigate the electrical characteristics of bendable a-Si:H thin-film transistors (TFTs) with various channel widths as a function of bending stress. Compared with a narrower channel TFT, a wider channel TFT exhibits a stable performance even at a bending strain of 1.3%. Our stress and strain distribution analysis reveals an inverse relationship between the channel width and the channel stress. As the channel width widens from 8 to 50 μm, the stress experienced by the middle channel region decreases from 545 to 277 MPa. Moreover, a 50 μm-channel-width TFT operates stably even after a 15 000 bending cycle while the 8 μm-channel-width TFT fails to operate after a 2000 bending cycle.

AB - In this study, we investigate the electrical characteristics of bendable a-Si:H thin-film transistors (TFTs) with various channel widths as a function of bending stress. Compared with a narrower channel TFT, a wider channel TFT exhibits a stable performance even at a bending strain of 1.3%. Our stress and strain distribution analysis reveals an inverse relationship between the channel width and the channel stress. As the channel width widens from 8 to 50 μm, the stress experienced by the middle channel region decreases from 545 to 277 MPa. Moreover, a 50 μm-channel-width TFT operates stably even after a 15 000 bending cycle while the 8 μm-channel-width TFT fails to operate after a 2000 bending cycle.

KW - a-Si:H TFT

KW - bendable TFT

KW - bending stress

KW - channel width

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DO - 10.1088/1361-6641/aa59a3

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SN - 0268-1242

VL - 32

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 4

M1 - 045002

ER -

Channel width dependence of electrical characteristics of a-Si:H TFTs under bending stresses

Abstract

Keywords

ASJC Scopus subject areas

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