Characteristics comparison between GaN epilayers grown on patterned and unpatterned sapphire substrate (0 0 0 1)

Engineering & Materials Science

• Epilayers 100%
• Sapphire 78%
• Substrates 41%
• Photoluminescence 17%
• Full width at half maximum 16%
• Lenses 11%
• Atomic force microscopy 9%
• Crystals 7%
• X ray diffraction 7%
• Scanning electron microscopy 5%
• Organic chemicals 5%
• Luminescence 5%
• Optical properties 4%
• Chemical vapor deposition 4%
• Coalescence 4%
• Surface morphology 4%
• Crystalline materials 3%
• Defects 2%
• Metals 2%

Physics & Astronomy

• sapphire 49%
• lenses 8%
• photoluminescence 7%
• light emission 6%
• atomic force microscopy 5%
• scanning electron microscopy 4%
• diffraction 3%
• crystals 3%
• coalescing 3%
• metalorganic chemical vapor deposition 3%
• x rays 3%
• luminescence 2%
• optical properties 2%
• defects 2%

Chemical Compounds

• Threading Dislocation 13%
• Atomic Force Microscopy 5%
• Photoluminescence 5%
• Scanning Electron Microscopy 4%
• Coalescence 4%
• Photoluminescence Spectrum 3%
• X-Ray Diffraction 3%
• Reflection 2%
• Optical Property 2%
• Time 2%
• Luminiscence Type 2%
• Surface 1%