Characteristics of 1.56-μm quantum-dot-distributed feedback lasers

Dong Sup Kim; Yun Joo Kim; Kyoung Chan Kim; Tae Geun Kim; Byung Seok Choi; Dae Kon Oh

Characteristics of 1.56-μm quantum-dot-distributed feedback lasers

Dong Sup Kim, Yun Joo Kim, Kyoung Chan Kim, Tae Geun Kim, Byung Seok Choi, Dae Kon Oh

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Single-mode distributed-feedback (DFB) lasers at 1.56 μm were fabricated by using seven-stacked InAs QD layers based on the InAlGaAs-InAlAs material system on InP (001) substrates. The threshold current was 65 mA at 20°C, and the sidemode suppression ratios (SMSR) were shown to be more than 40 dB for as-cleaved devices with 1.5-mm cavity lengths. Single-mode DFB operation was observed up to 8 mW. A coupling coefficient of 36 cm ^-1 was calculated from the subthreshold spectrum.

Original language	English
Pages (from-to)	1633-1636
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	48
Issue number	6
Publication status	Published - 2006 Jun

Keywords

InAs/InAlGaAs
Laser diodes
Quantum dot

ASJC Scopus subject areas

General Physics and Astronomy

Cite this

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title = "Characteristics of 1.56-μm quantum-dot-distributed feedback lasers",

abstract = "Single-mode distributed-feedback (DFB) lasers at 1.56 μm were fabricated by using seven-stacked InAs QD layers based on the InAlGaAs-InAlAs material system on InP (001) substrates. The threshold current was 65 mA at 20°C, and the sidemode suppression ratios (SMSR) were shown to be more than 40 dB for as-cleaved devices with 1.5-mm cavity lengths. Single-mode DFB operation was observed up to 8 mW. A coupling coefficient of 36 cm -1 was calculated from the subthreshold spectrum.",

keywords = "InAs/InAlGaAs, Laser diodes, Quantum dot",

author = "Kim, {Dong Sup} and Kim, {Yun Joo} and Kim, {Kyoung Chan} and Kim, {Tae Geun} and Choi, {Byung Seok} and Oh, {Dae Kon}",

year = "2006",

month = jun,

language = "English",

volume = "48",

pages = "1633--1636",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

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TY - JOUR

T1 - Characteristics of 1.56-μm quantum-dot-distributed feedback lasers

AU - Kim, Dong Sup

AU - Kim, Yun Joo

AU - Kim, Kyoung Chan

AU - Kim, Tae Geun

AU - Choi, Byung Seok

AU - Oh, Dae Kon

PY - 2006/6

Y1 - 2006/6

N2 - Single-mode distributed-feedback (DFB) lasers at 1.56 μm were fabricated by using seven-stacked InAs QD layers based on the InAlGaAs-InAlAs material system on InP (001) substrates. The threshold current was 65 mA at 20°C, and the sidemode suppression ratios (SMSR) were shown to be more than 40 dB for as-cleaved devices with 1.5-mm cavity lengths. Single-mode DFB operation was observed up to 8 mW. A coupling coefficient of 36 cm -1 was calculated from the subthreshold spectrum.

AB - Single-mode distributed-feedback (DFB) lasers at 1.56 μm were fabricated by using seven-stacked InAs QD layers based on the InAlGaAs-InAlAs material system on InP (001) substrates. The threshold current was 65 mA at 20°C, and the sidemode suppression ratios (SMSR) were shown to be more than 40 dB for as-cleaved devices with 1.5-mm cavity lengths. Single-mode DFB operation was observed up to 8 mW. A coupling coefficient of 36 cm -1 was calculated from the subthreshold spectrum.

KW - InAs/InAlGaAs

KW - Laser diodes

KW - Quantum dot

UR - http://www.scopus.com/inward/record.url?scp=33746069678&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:33746069678

SN - 0374-4884

VL - 48

SP - 1633

EP - 1636

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 6

ER -

Characteristics of 1.56-μm quantum-dot-distributed feedback lasers

Abstract

Keywords

ASJC Scopus subject areas

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