Characteristics of back-illuminated visible-blind UV photodetector based on Al_xGa_1-xN p-i-n photodiodes

Keyphrases

• PIN Photodiode 100%
• AlxGa1-xN 100%
• Back-illuminated 100%
• Visible-blind UV Photodetectors 100%
• AlN Buffer Layer 66%
• Zero Bias 66%
• Metal-organic Chemical Vapor Deposition (MOCVD) 33%
• Low Temperature 33%
• Processing Techniques 33%
• Responsivity 33%
• Photoresponse 33%
• Sapphire Substrate 33%
• Dark Current Density 33%
• Time Flow 33%
• Metallization 33%
• Contact Layer 33%
• Gas Flow Rate 33%
• Photolithography 33%
• External Quantum Efficiency 33%
• Low Dark Current 33%
• Flip chip 33%
• Rise Time 33%
• Growth Time 33%
• Window Layer 33%
• Heteroepitaxial Structures 33%
• Visible-blind 33%
• Device Processing 33%
• Fall Time 33%
• Semiconductor Processing 33%
• Multi-wafer 33%
• Vertical Reactor 33%
• Blind Region 33%

Engineering

• Photodiode 100%
• Photodetector 100%
• Buffer Layer 100%
• Low-Temperature 50%
• Chemical Vapor Deposition 50%
• Processing Technique 50%
• Sapphire Substrate 50%
• Responsivity 50%
• Vapor Deposition 50%
• Metallizations 50%
• External Quantum Efficiency 50%
• Optical Lithography 50%
• Rise Time 50%
• Gas Flowrate 50%
• Fall Time 50%

Material Science

• Buffer Layer 100%
• Aluminum Nitride 100%
• Sapphire 50%
• Density 50%
• Chemical Vapor Deposition 50%
• Gas Flow 50%