Characteristics of back-illumination UV photodetector fabricated with Al_xGa_1-xN heterostructure

Keyphrases

• Heterostructure 100%
• UV Photodetector 100%
• Backlight 100%
• AlxGa1-xN 100%
• Responsivity 66%
• Epilayer 66%
• Zero Bias 66%
• Low Dark Current 66%
• Al Mole Fraction 66%
• Back-illuminated 66%
• Metal-organic Chemical Vapor Deposition (MOCVD) 33%
• Surface Morphology 33%
• Low Temperature 33%
• Processing Techniques 33%
• Photoresponse 33%
• Sapphire Substrate 33%
• Dark Current Density 33%
• Metallization 33%
• Contact Layer 33%
• Photolithography 33%
• AlN Buffer Layer 33%
• External Quantum Efficiency 33%
• UV Region 33%
• Flip chip 33%
• Fast Photoresponse 33%
• Side-polished 33%
• Window Layer 33%
• Heteroepitaxial Structures 33%
• Device Processing 33%
• Fall Time 33%
• Semiconductor Processing 33%
• Photoresponse Time 33%
• Multi-wafer 33%
• Crack-free Surface 33%
• Vertical Reactor 33%

Engineering

• Photodetector 100%
• Heterojunctions 100%
• Responsivity 66%
• Mole Fraction 66%
• Low-Temperature 33%
• Chemical Vapor Deposition 33%
• Processing Technique 33%
• Surface Morphology 33%
• Sapphire Substrate 33%
• Vapor Deposition 33%
• Metallizations 33%
• External Quantum Efficiency 33%
• Buffer Layer 33%
• Optical Lithography 33%
• Free Surface 33%
• Fall Time 33%

Material Science

• Epilayers 100%
• Heterojunction 100%
• Sapphire 50%
• Density 50%
• Surface Morphology 50%
• Chemical Vapor Deposition 50%
• Buffer Layer 50%
• Aluminum Nitride 50%