Keyphrases
Heterostructure
100%
UV Photodetector
100%
Backlight
100%
AlxGa1-xN
100%
Responsivity
66%
Epilayer
66%
Zero Bias
66%
Low Dark Current
66%
Al Mole Fraction
66%
Back-illuminated
66%
Metal-organic Chemical Vapor Deposition (MOCVD)
33%
Surface Morphology
33%
Low Temperature
33%
Processing Techniques
33%
Photoresponse
33%
Sapphire Substrate
33%
Dark Current Density
33%
Metallization
33%
Contact Layer
33%
Photolithography
33%
AlN Buffer Layer
33%
External Quantum Efficiency
33%
UV Region
33%
Flip chip
33%
Fast Photoresponse
33%
Side-polished
33%
Window Layer
33%
Heteroepitaxial Structures
33%
Device Processing
33%
Fall Time
33%
Semiconductor Processing
33%
Photoresponse Time
33%
Multi-wafer
33%
Crack-free Surface
33%
Vertical Reactor
33%
Engineering
Photodetector
100%
Heterojunctions
100%
Responsivity
66%
Mole Fraction
66%
Low-Temperature
33%
Chemical Vapor Deposition
33%
Processing Technique
33%
Surface Morphology
33%
Sapphire Substrate
33%
Vapor Deposition
33%
Metallizations
33%
External Quantum Efficiency
33%
Buffer Layer
33%
Optical Lithography
33%
Free Surface
33%
Fall Time
33%
Material Science
Epilayers
100%
Heterojunction
100%
Sapphire
50%
Density
50%
Surface Morphology
50%
Chemical Vapor Deposition
50%
Buffer Layer
50%
Aluminum Nitride
50%