Abstract
Metallized polymers were prepared at an ambient temperature by an electron-cyclotron-resonance (ECR) plasma enhanced chemical vapor deposition (PECVD) system equipped with (-)DC bias from the Cu(hfac)2-Ar-H 2 system. Metallized polymers, and especially poly ethylene terephthalate (PET), are currently being studied and employed for microelectronic packaging, magnetic tapes, EMI shielding, etc. Copper is an attractive material for metallization thanks to its intrinsic electromigration resistance and low resistivity. For such applications, good adhesion between the polymer and the metal is required and the films should be prepared at an ambient temperature. The common techniques for the metallization of polymers are electroless plating and PVD techniques. However, for good adhesion, these techniques may need chemical etching, which may cause environmental problems. In addition, in the case of ion-beam-assisted deposition techniques, the ion beam may damage the substrate because of electronic excitation or collisional events. On the other hand, preparation of metallized polymer film by MOCVD has not been tried since high temperatures must be applied to the substrate for ionization and the activation of organometallic precursors. XRD results showed that the Cu (111) peaks were clearly observed when H2 was introduced to the plasma. The surface morphology showed that larger Cu grains were formed in the metal-organic composite films with the introduction of H2 to the plasma. AES depth profiles showed that H2 gas introduction to the plasma led to the formation of copper-rich films with a homogeneous composition. Also, the sheet resistance was strongly dependent on the H 2 content of the plasma. This means that hydrogen may lead to both the formation of stable volatile organic compounds and the reduction of copper, which influences both the crystallographic structure and the composition of films. As a result, crystalline copper films with a sheet resistance of 2-3 Ω/sq. can be prepared on PET with the addition of H2to the plasma.
| Original language | English |
|---|---|
| Pages (from-to) | 405 |
| Number of pages | 1 |
| Journal | IEEE International Conference on Plasma Science |
| Publication status | Published - 2003 |
| Event | 2003 IEEE International Conference on Plasma Science - Jeju, Korea, Republic of Duration: 2003 Jun 2 → 2003 Jun 5 |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering