Abstract
Cu/C films were prepared at room temperature under Cu(hfac)2-Ar-H2 atmosphere in order to obtain metallized polymer by using ECR-MOCVD (Electron Cyclotron Resonance Metal Organic Chemical Vapor Deposition) coupled with periodic DC bias system. Room temperature MOCVD was possible when periodic negative voltage was applied on the polymer substrate. The periodic negative voltage induces ions and radicals to have nucleation reaction on the surface of the substrate. Formation of Cu/C films strongly depends on the periodic negative pattern of DC bias and the electric sheet resistance of the films was controlled from 108 to 100 ohm/sq ranges by process parameters such as microwave power and magnet current. The increase in microwave power and magnet current brought on copper-rich film formation with low electric resistance. On the other hand carbon-rich films with high sheet electric resistance were prepared with decreased values for process parameters aforementioned.
| Original language | English |
|---|---|
| Pages (from-to) | 339-344 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 734 |
| Publication status | Published - 2003 |
| Event | Polymer/Metal Interfaces and Defect Mediated Phenomena in Ordered Polymers - Boston, MA, United States Duration: 2002 Dec 2 → 2002 Dec 6 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering