Abstract
We demonstrate room-temperature low-threshold-current lasing action from electrically driven wavelength-scale high-quality photonic crystal lasers having large spontaneous emission factors by solving the theoretical and technical constraints laid upon by the additional requirement of the current injection. The ultrasmall cavity is electrically pulse pumped through a submicron-size semiconductor "wire" at the center of the mode with minimal degradation of the quality factor. In addition, to better utilize the low mobility of the hole, we employ a doping structure that is inverted from the conventional semiconductors. Rich lasing actions and their various characteristics are experimentally measured in the single-cell and three-cell photonic crystal cavities. Several relevant measurements are compared with three-dimensional finite-difference time-domain computations based on the actual fabricated structural parameters. The electrically driven photonic crystal laser, which is a small step toward a "practical" form of the single photon source, represents a meaningful achievement in the field of photonic crystal devices and photonic integrated circuits as well as of great interest to the quantum electrodynamics and quantum information communities.
Original language | English |
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Pages (from-to) | 1131-1141 |
Number of pages | 11 |
Journal | IEEE Journal of Quantum Electronics |
Volume | 41 |
Issue number | 9 |
DOIs | |
Publication status | Published - 2005 Sept |
Externally published | Yes |
Bibliographical note
Funding Information:Manuscript received March 17, 2005; revised April 24, 2005. This work was supported in part by the National Research and Development Project for Nanoscience and Technology. H.-G. Park is with the Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138 USA (e-mail: [email protected]). S.-H. Kim, M.-K. Seo, and Y.-H. Lee are with the Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea (e-mail: [email protected]; [email protected]; [email protected]). Y.-G. Ju and S.-B. Kim are with the Telecommunication Basic Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305–701, Korea (e-mail: [email protected]; [email protected]). Digital Object Identifier 10.1109/JQE.2005.852800
Keywords
- Current injection
- Finite-difference time-domain (FDTD)
- Microcavity
- Photonic band gap
- Semiconductor laser
- Single photon source
- Spontaneous emission factor
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering