Characteristics of heterojunction consisting of plasma polymerized thiophene and n-type silicon

D. H. Shin; S. D. Lee; K. P. Lee; S. Y. Park; D. H. Choi; N. Kim

doi:10.1016/0379-6779(94)03251-Z

Characteristics of heterojunction consisting of plasma polymerized thiophene and n-type silicon

D. H. Shin^*
, S. D. Lee
, K. P. Lee
, S. Y. Park
, D. H. Choi
, N. Kim

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Thin semiconducting film of 10^-9 S/cm conductivity was prepared by the plasma polymerization of thiophene. A novel heterojunction device was fabricated by the direct plasma polymerization coating of this polymer layer on n-Si, which showed good rectifying and photoconducting behavior at room temperature.

Original language	English
Pages (from-to)	2263-2264
Number of pages	2
Journal	Synthetic Metals
Volume	71
Issue number	1-3
DOIs	https://doi.org/10.1016/0379-6779(94)03251-Z
Publication status	Published - 1995 Apr 1
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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10.1016/0379-6779(94)03251-Z

Cite this

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title = "Characteristics of heterojunction consisting of plasma polymerized thiophene and n-type silicon",

abstract = "Thin semiconducting film of 10-9 S/cm conductivity was prepared by the plasma polymerization of thiophene. A novel heterojunction device was fabricated by the direct plasma polymerization coating of this polymer layer on n-Si, which showed good rectifying and photoconducting behavior at room temperature.",

author = "Shin, \{D. H.\} and Lee, \{S. D.\} and Lee, \{K. P.\} and Park, \{S. Y.\} and Choi, \{D. H.\} and N. Kim",

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T1 - Characteristics of heterojunction consisting of plasma polymerized thiophene and n-type silicon

AU - Shin, D. H.

AU - Lee, S. D.

AU - Lee, K. P.

AU - Park, S. Y.

AU - Choi, D. H.

AU - Kim, N.

PY - 1995/4/1

Y1 - 1995/4/1

N2 - Thin semiconducting film of 10-9 S/cm conductivity was prepared by the plasma polymerization of thiophene. A novel heterojunction device was fabricated by the direct plasma polymerization coating of this polymer layer on n-Si, which showed good rectifying and photoconducting behavior at room temperature.

AB - Thin semiconducting film of 10-9 S/cm conductivity was prepared by the plasma polymerization of thiophene. A novel heterojunction device was fabricated by the direct plasma polymerization coating of this polymer layer on n-Si, which showed good rectifying and photoconducting behavior at room temperature.

UR - https://www.scopus.com/pages/publications/0029291693

U2 - 10.1016/0379-6779(94)03251-Z

DO - 10.1016/0379-6779(94)03251-Z

M3 - Article

AN - SCOPUS:0029291693

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VL - 71

SP - 2263

EP - 2264

JO - Synthetic Metals

JF - Synthetic Metals

IS - 1-3

ER -

Characteristics of heterojunction consisting of plasma polymerized thiophene and n-type silicon

Abstract

ASJC Scopus subject areas

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