We have studied the growth of InxGa1 - xN/GaN on (0 0 0 1) sapphire substrates. The films were grown in a horizontal MOVPE reactor at the reduced pressure of 100 Torr. In composition, x in InxGa1 - xN/GaN grown at 810°C determined by the DCXRD is 0.08 and 0.13 for 770°C. The FWHMs of the DCXRD for (0 0 0 2) diffraction from the In0.08Ga0.92N and In0.13Ga0.87N are 11 arcmin and 9 arcmin, respectively, whose difference is considered to be resulted from In dissociation. In addition, we confirmed that the thermal pit density of In0.08Ga0.92N was higher than that of In0.13Ga0.87N with the SEM observation. The carrier concentration and mobility of In0.08Ga0.92N are 3 × 1018/cm3 and 47 cm2/V s, and those of In0.13Ga0.87N are 9 × 1018/cm3 and 70 cm2/V s, respectively. In spite of the lower carrier concentration, the mobility of In0.08Ga0.92N is lower than that of In0.13Ga0.87N, which is considered to be due to the higher defect density of In0.08Ga0.92N than that of In0.13Ga0.87N as can be seen from the result of DCXRD. The FWHMs of band-edge emission peak measured by PL at room temperature were 110 meV at 395 nm for In0.08Ga0.92N and 120 meV at 410 nm for In0.13Ga0.87N. The In composition in InGaN increased as the growth temperature decreased, and In was still dissociated at 770°C. Some high-quality InGaN films were grown on GaN films compared with the recent results of others.
Bibliographical noteFunding Information:
This work was supported by the Korea Science and Engineering Foundation (KOSEF) through the Semiconductor Physics Research Center (SPRC), Jeonbuk National University.
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry