Magnetic tunnel junctions (MTJs), which consisted of amorphous ferromagnetic Ni16Fe62Si8B14 free layers, were investigated. NiFeSiB has a lower saturation magnetization (Ms: 800 emu/cm3) than Co90Fe10 and a higher anisotropy constant (Ku: 2700 erg/cm3) than Ni80Fe20. By increasing the free layer thickness, the tunnel magnetoresistance (TMR) ratio of up to 41% was achieved and it exhibited a much lower switching field (Hsw) than the conventionally used CoFe free layer MTJ. Furthermore, by inserting a thin CoFe layer (1 nm) at the tunnel barrier/NiFeSiB interface, the TMR ratio and switching squareness were enhanced.
Bibliographical noteFunding Information:
This work was supported by the Korea Research Foundation Grant (KRF-2004-041-D00289).
- Amorphous magnetic material
- Magnetic tunnel junctions
- Switching field
- Tunneling magnetoresistance
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics