Abstract
Magnetic tunnel junctions (MTJs), which consisted of amorphous ferromagnetic Ni16Fe62Si8B14 free layers, were investigated. NiFeSiB has a lower saturation magnetization (Ms: 800 emu/cm3) than Co90Fe10 and a higher anisotropy constant (Ku: 2700 erg/cm3) than Ni80Fe20. By increasing the free layer thickness, the tunnel magnetoresistance (TMR) ratio of up to 41% was achieved and it exhibited a much lower switching field (Hsw) than the conventionally used CoFe free layer MTJ. Furthermore, by inserting a thin CoFe layer (1 nm) at the tunnel barrier/NiFeSiB interface, the TMR ratio and switching squareness were enhanced.
Original language | English |
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Pages (from-to) | 1929-1931 |
Number of pages | 3 |
Journal | Journal of Magnetism and Magnetic Materials |
Volume | 310 |
Issue number | 2 SUPPL. PART 3 |
DOIs | |
Publication status | Published - 2007 Mar |
Bibliographical note
Funding Information:This work was supported by the Korea Research Foundation Grant (KRF-2004-041-D00289).
Keywords
- Amorphous magnetic material
- Magnetic tunnel junctions
- Sensitivity
- Switching field
- Tunneling magnetoresistance
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics