Characteristics of magnetic tunnel junctions comprising ferromagnetic amorphous NiFeSiB layers

B. S. Chun; Y. K. Kim; J. Y. Hwang; H. I. Yim; J. R. Rhee; T. W. Kim

doi:10.1016/j.jmmm.2006.10.762

Characteristics of magnetic tunnel junctions comprising ferromagnetic amorphous NiFeSiB layers

B. S. Chun, Y. K. Kim, J. Y. Hwang, H. I. Yim, J. R. Rhee, T. W. Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Magnetic tunnel junctions (MTJs), which consisted of amorphous ferromagnetic Ni₁₆Fe₆₂Si₈B₁₄ free layers, were investigated. NiFeSiB has a lower saturation magnetization (M_s: 800 emu/cm³) than Co₉₀Fe₁₀ and a higher anisotropy constant (K_u: 2700 erg/cm³) than Ni₈₀Fe₂₀. By increasing the free layer thickness, the tunnel magnetoresistance (TMR) ratio of up to 41% was achieved and it exhibited a much lower switching field (H_sw) than the conventionally used CoFe free layer MTJ. Furthermore, by inserting a thin CoFe layer (1 nm) at the tunnel barrier/NiFeSiB interface, the TMR ratio and switching squareness were enhanced.

Original language	English
Pages (from-to)	1929-1931
Number of pages	3
Journal	Journal of Magnetism and Magnetic Materials
Volume	310
Issue number	2 SUPPL. PART 3
DOIs	https://doi.org/10.1016/j.jmmm.2006.10.762
Publication status	Published - 2007 Mar

Bibliographical note

Funding Information:
This work was supported by the Korea Research Foundation Grant (KRF-2004-041-D00289).

Keywords

Amorphous magnetic material
Magnetic tunnel junctions
Sensitivity
Switching field
Tunneling magnetoresistance

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1016/j.jmmm.2006.10.762

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title = "Characteristics of magnetic tunnel junctions comprising ferromagnetic amorphous NiFeSiB layers",

abstract = "Magnetic tunnel junctions (MTJs), which consisted of amorphous ferromagnetic Ni16Fe62Si8B14 free layers, were investigated. NiFeSiB has a lower saturation magnetization (Ms: 800 emu/cm3) than Co90Fe10 and a higher anisotropy constant (Ku: 2700 erg/cm3) than Ni80Fe20. By increasing the free layer thickness, the tunnel magnetoresistance (TMR) ratio of up to 41% was achieved and it exhibited a much lower switching field (Hsw) than the conventionally used CoFe free layer MTJ. Furthermore, by inserting a thin CoFe layer (1 nm) at the tunnel barrier/NiFeSiB interface, the TMR ratio and switching squareness were enhanced.",

keywords = "Amorphous magnetic material, Magnetic tunnel junctions, Sensitivity, Switching field, Tunneling magnetoresistance",

author = "Chun, {B. S.} and Kim, {Y. K.} and Hwang, {J. Y.} and Yim, {H. I.} and Rhee, {J. R.} and Kim, {T. W.}",

note = "Funding Information: This work was supported by the Korea Research Foundation Grant (KRF-2004-041-D00289).",

year = "2007",

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doi = "10.1016/j.jmmm.2006.10.762",

language = "English",

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T1 - Characteristics of magnetic tunnel junctions comprising ferromagnetic amorphous NiFeSiB layers

AU - Chun, B. S.

AU - Kim, Y. K.

AU - Hwang, J. Y.

AU - Yim, H. I.

AU - Rhee, J. R.

AU - Kim, T. W.

N1 - Funding Information: This work was supported by the Korea Research Foundation Grant (KRF-2004-041-D00289).

PY - 2007/3

Y1 - 2007/3

N2 - Magnetic tunnel junctions (MTJs), which consisted of amorphous ferromagnetic Ni16Fe62Si8B14 free layers, were investigated. NiFeSiB has a lower saturation magnetization (Ms: 800 emu/cm3) than Co90Fe10 and a higher anisotropy constant (Ku: 2700 erg/cm3) than Ni80Fe20. By increasing the free layer thickness, the tunnel magnetoresistance (TMR) ratio of up to 41% was achieved and it exhibited a much lower switching field (Hsw) than the conventionally used CoFe free layer MTJ. Furthermore, by inserting a thin CoFe layer (1 nm) at the tunnel barrier/NiFeSiB interface, the TMR ratio and switching squareness were enhanced.

AB - Magnetic tunnel junctions (MTJs), which consisted of amorphous ferromagnetic Ni16Fe62Si8B14 free layers, were investigated. NiFeSiB has a lower saturation magnetization (Ms: 800 emu/cm3) than Co90Fe10 and a higher anisotropy constant (Ku: 2700 erg/cm3) than Ni80Fe20. By increasing the free layer thickness, the tunnel magnetoresistance (TMR) ratio of up to 41% was achieved and it exhibited a much lower switching field (Hsw) than the conventionally used CoFe free layer MTJ. Furthermore, by inserting a thin CoFe layer (1 nm) at the tunnel barrier/NiFeSiB interface, the TMR ratio and switching squareness were enhanced.

KW - Amorphous magnetic material

KW - Magnetic tunnel junctions

KW - Sensitivity

KW - Switching field

KW - Tunneling magnetoresistance

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JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 2 SUPPL. PART 3

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Characteristics of magnetic tunnel junctions comprising ferromagnetic amorphous NiFeSiB layers

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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