Characteristics of magnetic tunnel junctions consisting of amorphous CoNbZr layers

Byong Sun Chun; Seong Rae Lee; Young Keun Kim

doi:10.1063/1.1558240

Characteristics of magnetic tunnel junctions consisting of amorphous CoNbZr layers

Byong Sun Chun, Seong Rae Lee, Young Keun Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

A study to investigate the magnetic tunnel junctions comprising amorphous CoNbZr layers was presented. The Co_85.5Nb₈Zr_6.5 layers were used to substitute Ta layers with an emphasis given on understanding underlayer effect. The CoNbZr-underlayered structure showed superior surface smoothness up to the tunnel barrier than Ta-underlayered one for both as-deposited state and after annealing. It was observed that the tunneling magnetoresistance ratio can be increased up to 32% after 10 minute annealing at 300°C by a slight change in the bottom electrode thickness.

Original language	English
Pages (from-to)	8361-8363
Number of pages	3
Journal	Journal of Applied Physics
Volume	93
Issue number	10 3
DOIs	https://doi.org/10.1063/1.1558240
Publication status	Published - 2003 May 15

ASJC Scopus subject areas

Physics and Astronomy(all)

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Characteristics of magnetic tunnel junctions consisting of amorphous CoNbZr layers

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