Characteristics of multilevel bipolar resistive switching in Au/ZnO/ITO devices on glass

Yong Han; Kyoungah Cho; Sangsig Kim

doi:10.1016/j.mee.2011.02.058

Characteristics of multilevel bipolar resistive switching in Au/ZnO/ITO devices on glass

Yong Han, Kyoungah Cho, Sangsig Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

In this study, we characterize multilevel bipolar switching in devices composed of Au/ZnO/ITO constructed on glass. The ratio of the measured resistance in the low-resistance state (LRS) to that in the high-resistance state (HRS) depends on the starting sweep voltage. The HRS/LRS ratio increases from 10 to 10⁴ as the starting sweep voltage changes from -1 to -3.5 V. Moreover, the Au/ZnO/ITO devices can complete more than 10² cycles and maintain their characteristics for up to 10 years. A more detailed description on the multilevel bipolar switching of our devices will be given in this paper.

Original language	English
Pages (from-to)	2608-2610
Number of pages	3
Journal	Microelectronic Engineering
Volume	88
Issue number	8
DOIs	https://doi.org/10.1016/j.mee.2011.02.058
Publication status	Published - 2011 Aug

Keywords

Multilevel
ReRAM
Resistive switching
ZnO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.mee.2011.02.058

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title = "Characteristics of multilevel bipolar resistive switching in Au/ZnO/ITO devices on glass",

abstract = "In this study, we characterize multilevel bipolar switching in devices composed of Au/ZnO/ITO constructed on glass. The ratio of the measured resistance in the low-resistance state (LRS) to that in the high-resistance state (HRS) depends on the starting sweep voltage. The HRS/LRS ratio increases from 10 to 104 as the starting sweep voltage changes from -1 to -3.5 V. Moreover, the Au/ZnO/ITO devices can complete more than 102 cycles and maintain their characteristics for up to 10 years. A more detailed description on the multilevel bipolar switching of our devices will be given in this paper.",

keywords = "Multilevel, ReRAM, Resistive switching, ZnO",

author = "Yong Han and Kyoungah Cho and Sangsig Kim",

note = "Funding Information: This work was supported by the IT R&D program of MKE/KEIT (10030559, Development of next-generation high-performance organic/nano materials and printing process technology), the Nano R&D Program (M10703000980-08M0300-98010), the World Class University Project (WCU, R32-2008-000-10082-0) of the Ministry of Education, Science, and Technology (Korea Science and Engineering Foundation), and the Hynix-Korea University Nano-Semiconductor Program.",

year = "2011",

month = aug,

doi = "10.1016/j.mee.2011.02.058",

language = "English",

volume = "88",

pages = "2608--2610",

journal = "Microelectronic Engineering",

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AU - Han, Yong

AU - Cho, Kyoungah

AU - Kim, Sangsig

N1 - Funding Information: This work was supported by the IT R&D program of MKE/KEIT (10030559, Development of next-generation high-performance organic/nano materials and printing process technology), the Nano R&D Program (M10703000980-08M0300-98010), the World Class University Project (WCU, R32-2008-000-10082-0) of the Ministry of Education, Science, and Technology (Korea Science and Engineering Foundation), and the Hynix-Korea University Nano-Semiconductor Program.

PY - 2011/8

Y1 - 2011/8

N2 - In this study, we characterize multilevel bipolar switching in devices composed of Au/ZnO/ITO constructed on glass. The ratio of the measured resistance in the low-resistance state (LRS) to that in the high-resistance state (HRS) depends on the starting sweep voltage. The HRS/LRS ratio increases from 10 to 104 as the starting sweep voltage changes from -1 to -3.5 V. Moreover, the Au/ZnO/ITO devices can complete more than 102 cycles and maintain their characteristics for up to 10 years. A more detailed description on the multilevel bipolar switching of our devices will be given in this paper.

AB - In this study, we characterize multilevel bipolar switching in devices composed of Au/ZnO/ITO constructed on glass. The ratio of the measured resistance in the low-resistance state (LRS) to that in the high-resistance state (HRS) depends on the starting sweep voltage. The HRS/LRS ratio increases from 10 to 104 as the starting sweep voltage changes from -1 to -3.5 V. Moreover, the Au/ZnO/ITO devices can complete more than 102 cycles and maintain their characteristics for up to 10 years. A more detailed description on the multilevel bipolar switching of our devices will be given in this paper.

KW - Multilevel

KW - ReRAM

KW - Resistive switching

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=79960052135&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2011.02.058

DO - 10.1016/j.mee.2011.02.058

M3 - Article

AN - SCOPUS:79960052135

SN - 0167-9317

VL - 88

SP - 2608

EP - 2610

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 8

ER -

Characteristics of multilevel bipolar resistive switching in Au/ZnO/ITO devices on glass

Abstract

Keywords

ASJC Scopus subject areas

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