Abstract
The effect of hydrogen peroxide (H2O2) treatment on the characteristics of Pt Schottky contacts to n-type ZnO(0001) layers (8×1016-2×1017 cm-3) has been investigated. Pt contacts on conventional organic solvent-cleaned ZnO show fairly leaky behaviour with a leakage current of -0.05 A under -5 V, while Pt contacts on H2O2-treated ZnO give good Schottky behaviour with a leakage current of -6.5×10-8 A under -5 V. Schottky barrier heights extracted from the current-voltage characteristics are in the range 0.88-0.97 eV depending on the ideality factors. Room temperature photoluminescence results show that the hydrogen peroxide treatment is fairly effective in removing deep-level defects near the ZnO surface region.
Original language | English |
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Pages (from-to) | 211-217 |
Number of pages | 7 |
Journal | Superlattices and Microstructures |
Volume | 39 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - 2006 Jan |
Event | E-MRS 2005 Symposium G: ZnO and Related Materials Part 2 - Duration: 2005 May 31 → 2005 Jun 3 |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Electrical and Electronic Engineering