Characteristics of SnOx-ZnO composite film on Polyethylene Terephalate (PET) substrate prepared by ECR-MOCVD

Ji Hun Park; Dong Jin Byun; Joong Kee Lee

doi:10.4028/0-87849-463-4.515

Characteristics of SnO_x-ZnO composite film on Polyethylene Terephalate (PET) substrate prepared by ECR-MOCVD

Ji Hun Park, Dong Jin Byun, Joong Kee Lee

Research output: Contribution to journal › Conference article › peer-review

Abstract

Zinc oxide and tin oxide (ZnSnO_x) films on PET (Polyethylene Terephthalate) substrate were prepared by the electron cyclotron resonance-metal organic chemical vapor deposition (ECR-MOCVD) under an hydrogen, oxygen and argon atmosphere. The used tin and zinc precursor are TMT (tetramethyltin) and DEZn(diethylzinc), respectively. The metal (Zinc and Tin) oxidation content plays an important role to control the optical and electrical characteristics of the films. Therefore the optimum DEZn/TMT content can be determined by the counter stability effect between oxidation and zinc-tin deposition. The obtained ZnSnO_x (or SnO_x-ZnO) of high mobility films exhibited c.a. 7.0×10^-3 ohm · cm of electrical resistivity.

Original language	English
Pages (from-to)	515-518
Number of pages	4
Journal	Advanced Materials Research
Volume	24-25
DOIs	https://doi.org/10.4028/0-87849-463-4.515
Publication status	Published - 2007
Event	PRICM 6: The 6th Pacific Rim International Conference on Advanced Materials and Processing - Jeju Island, Korea, Republic of Duration: 2007 Nov 5 → 2007 Nov 9

Keywords

ECR-MOCVD
Electrical resistivity
SnO-ZnO
XPS
ZnSnO

ASJC Scopus subject areas

General Engineering

Access to Document

10.4028/0-87849-463-4.515

Cite this

@article{0c96899ddfe2452e93589600f23f80dd,

title = "Characteristics of SnOx-ZnO composite film on Polyethylene Terephalate (PET) substrate prepared by ECR-MOCVD",

abstract = "Zinc oxide and tin oxide (ZnSnOx) films on PET (Polyethylene Terephthalate) substrate were prepared by the electron cyclotron resonance-metal organic chemical vapor deposition (ECR-MOCVD) under an hydrogen, oxygen and argon atmosphere. The used tin and zinc precursor are TMT (tetramethyltin) and DEZn(diethylzinc), respectively. The metal (Zinc and Tin) oxidation content plays an important role to control the optical and electrical characteristics of the films. Therefore the optimum DEZn/TMT content can be determined by the counter stability effect between oxidation and zinc-tin deposition. The obtained ZnSnOx (or SnOx-ZnO) of high mobility films exhibited c.a. 7.0×10-3 ohm · cm of electrical resistivity.",

keywords = "ECR-MOCVD, Electrical resistivity, SnO-ZnO, XPS, ZnSnO",

author = "Park, {Ji Hun} and Byun, {Dong Jin} and Lee, {Joong Kee}",

year = "2007",

doi = "10.4028/0-87849-463-4.515",

language = "English",

volume = "24-25",

pages = "515--518",

journal = "Advanced Materials Research",

issn = "1022-6680",

publisher = "Trans Tech Publications",

note = "PRICM 6: The 6th Pacific Rim International Conference on Advanced Materials and Processing ; Conference date: 05-11-2007 Through 09-11-2007",

}

TY - JOUR

T1 - Characteristics of SnOx-ZnO composite film on Polyethylene Terephalate (PET) substrate prepared by ECR-MOCVD

AU - Park, Ji Hun

AU - Byun, Dong Jin

AU - Lee, Joong Kee

PY - 2007

Y1 - 2007

N2 - Zinc oxide and tin oxide (ZnSnOx) films on PET (Polyethylene Terephthalate) substrate were prepared by the electron cyclotron resonance-metal organic chemical vapor deposition (ECR-MOCVD) under an hydrogen, oxygen and argon atmosphere. The used tin and zinc precursor are TMT (tetramethyltin) and DEZn(diethylzinc), respectively. The metal (Zinc and Tin) oxidation content plays an important role to control the optical and electrical characteristics of the films. Therefore the optimum DEZn/TMT content can be determined by the counter stability effect between oxidation and zinc-tin deposition. The obtained ZnSnOx (or SnOx-ZnO) of high mobility films exhibited c.a. 7.0×10-3 ohm · cm of electrical resistivity.

AB - Zinc oxide and tin oxide (ZnSnOx) films on PET (Polyethylene Terephthalate) substrate were prepared by the electron cyclotron resonance-metal organic chemical vapor deposition (ECR-MOCVD) under an hydrogen, oxygen and argon atmosphere. The used tin and zinc precursor are TMT (tetramethyltin) and DEZn(diethylzinc), respectively. The metal (Zinc and Tin) oxidation content plays an important role to control the optical and electrical characteristics of the films. Therefore the optimum DEZn/TMT content can be determined by the counter stability effect between oxidation and zinc-tin deposition. The obtained ZnSnOx (or SnOx-ZnO) of high mobility films exhibited c.a. 7.0×10-3 ohm · cm of electrical resistivity.

KW - ECR-MOCVD

KW - Electrical resistivity

KW - SnO-ZnO

KW - XPS

KW - ZnSnO

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EP - 518

JO - Advanced Materials Research

JF - Advanced Materials Research

T2 - PRICM 6: The 6th Pacific Rim International Conference on Advanced Materials and Processing

Y2 - 5 November 2007 through 9 November 2007

ER -