Characteristics of Superluminescent Diodes Utilizing In 0.5Ga0.5As Quantum Dots

Du Chang Heo; Song Jin Dong; Won Jun Choi; Jung Il Lee; Ji Chai Jeong; Il Ki Han

doi:10.1143/jjap.42.5133

Characteristics of Superluminescent Diodes Utilizing In _0.5Ga_0.5As Quantum Dots

Du Chang Heo, Song Jin Dong, Won Jun Choi, Jung Il Lee, Ji Chai Jeong, Il Ki Han

Department of Brain and Cognitive Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Superluminescent diodes (SLDs) using an In_0.5Ga_0.5As quantum dot (QD) were fabricated. The In_0.5Ga_0.5As QDs were formed by a five-period superlattice of InAs (1 monolayer) and GaAs (1 monolayer). The QDs were three-stacked with the 40-nm-thick GaAs barrier layer and the total dot density was 5 × 10¹⁰cm^-2. The output power and spectral width of the SLD using these three-stacked QDs are 0. 9 W and 80 nm, covering the range from 980 to 1060 nm, respectively.

Original language	English
Pages (from-to)	5133-5134
Number of pages	2
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	42
Issue number	8
DOIs	https://doi.org/10.1143/jjap.42.5133
Publication status	Published - 2003 Aug

Keywords

Light emitting diodes
Quantum dot
Short-period superlattice
Superluminescent diodes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.42.5133

Cite this

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title = "Characteristics of Superluminescent Diodes Utilizing In 0.5Ga0.5As Quantum Dots",

abstract = "Superluminescent diodes (SLDs) using an In0.5Ga0.5As quantum dot (QD) were fabricated. The In0.5Ga0.5As QDs were formed by a five-period superlattice of InAs (1 monolayer) and GaAs (1 monolayer). The QDs were three-stacked with the 40-nm-thick GaAs barrier layer and the total dot density was 5 × 1010cm-2. The output power and spectral width of the SLD using these three-stacked QDs are 0. 9 W and 80 nm, covering the range from 980 to 1060 nm, respectively.",

keywords = "Light emitting diodes, Quantum dot, Short-period superlattice, Superluminescent diodes",

author = "Heo, {Du Chang} and Dong, {Song Jin} and Choi, {Won Jun} and Lee, {Jung Il} and Jeong, {Ji Chai} and Han, {Il Ki}",

year = "2003",

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AU - Heo, Du Chang

AU - Dong, Song Jin

AU - Choi, Won Jun

AU - Lee, Jung Il

AU - Jeong, Ji Chai

AU - Han, Il Ki

PY - 2003/8

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AB - Superluminescent diodes (SLDs) using an In0.5Ga0.5As quantum dot (QD) were fabricated. The In0.5Ga0.5As QDs were formed by a five-period superlattice of InAs (1 monolayer) and GaAs (1 monolayer). The QDs were three-stacked with the 40-nm-thick GaAs barrier layer and the total dot density was 5 × 1010cm-2. The output power and spectral width of the SLD using these three-stacked QDs are 0. 9 W and 80 nm, covering the range from 980 to 1060 nm, respectively.

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