Tetracene-based organic thin-film transistors (OTFTs) were prepared using a neutral cluster beam deposition (NCBD) method. The effect of surface modification with an amphiphilic surfactant, octadecyltrichlorosilane (OTS), on the formation of thin films and the geometric influence of channel length and width on the transistor characteristics were systematically examined. The estimated trap density and temperature-dependence of the field-effect mobility in the range of 10-300 K demonstrated that surfactant pretreatment decreased the total trap density and activation energy for hole-transport by reducing structural disorder in the active layer. In particular, the room-temperature hole mobilities of 0.162 and 0.252 cm2/Vs for untreated and OTS-pretreated devices were among the best to date for polycrystalline tetracene-based transistors using SiO2 gate dielectric layers without any thermal post-treatment.
Bibliographical noteFunding Information:
H.-S. Seo is grateful for the Seoul Science Fellowship. This work was supported by a Korea University grant and the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MEST) (No. M10500000023-06J0000-02310).
- Neutral cluster beam deposition (NCBD)
- Octadecyltrichlorosilane (OTS)
- Organic thin-film transistor (OTFT)
- Temperature-dependence of field-effect mobility (μ)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering