TY - JOUR
T1 - Characteristics of the ground-state lasing operation in V-groove quantum-wire lasers
AU - Kim, T. G.
AU - Wang, X. L.
AU - Suzuki, Y.
AU - Komori, K.
AU - Ogura, M.
N1 - Funding Information:
Manuscript received September 16, 1999; revised December 22, 1999. This work was supported by the New Energy and Industrial Technology Development Organization (NEDO) and was performed partially under the management of Femtosecond Technology Research Association (FESTA). T. G. Kim is with the Electrotechnical Laboratory (ETL), Tsukuba, Ibaraki 305-8568, Japan. He is also with the New Energy and Industrial Technology Development Organization (NEDO), Tokyo 170-6027, Japan, and JST-CREST. X.-L. Wang, K. Komori, and M. Ogura are with the Electrotechnical Laboratory (ETL), Tsukuba, Ibaraki 305-8568, Japan, and JST-CREST. Y. Suzuki is with the Electrotechnical Laboratory (ETL), Tsukuba, Ibaraki 305-8568, Japan. Publisher Item Identifier S 1077-260X(00)05089-9.
PY - 2000/5
Y1 - 2000/5
N2 - Lasing from the ground subband transition, which has long been attempted in one-dimensional (1-D) structures, has been achieved for the first time with vertically stacked, AlGaAs-GaAs multiple quantum-wire (QWR) lasers, fabricated by flow-rate modulation epitaxy on V-groove substrates. Direct experimental evidence is provided by the consistency of the photon energies of the lasing and photoluminescence peaks, in the temperature range 4.5 K-300 K. It is further ensured by numerical calculation of the electronic subband energy states with the corresponding QWR structure. The lasers with cavity lengths of 350 μm, show fundamental transverse mode, typical threshold current of 5 mA, an internal quantum efficiency of 18.5%, ultrahigh characteristic temperature To approx. 322 K above room temperature, and remarkably low wavelength-tuning rates of current (<0.012 nm/mA) and temperature (<0.19 nm/°C). Ultrafast lasing behaviors at the ground (n = 1) and the second (n = 2) transition of the QWR are also investigated in terms of the gain-switching method, using a characteristic of the wavelength shift from the n = 1 to the n = 2 subband with shortening the cavity length.
AB - Lasing from the ground subband transition, which has long been attempted in one-dimensional (1-D) structures, has been achieved for the first time with vertically stacked, AlGaAs-GaAs multiple quantum-wire (QWR) lasers, fabricated by flow-rate modulation epitaxy on V-groove substrates. Direct experimental evidence is provided by the consistency of the photon energies of the lasing and photoluminescence peaks, in the temperature range 4.5 K-300 K. It is further ensured by numerical calculation of the electronic subband energy states with the corresponding QWR structure. The lasers with cavity lengths of 350 μm, show fundamental transverse mode, typical threshold current of 5 mA, an internal quantum efficiency of 18.5%, ultrahigh characteristic temperature To approx. 322 K above room temperature, and remarkably low wavelength-tuning rates of current (<0.012 nm/mA) and temperature (<0.19 nm/°C). Ultrafast lasing behaviors at the ground (n = 1) and the second (n = 2) transition of the QWR are also investigated in terms of the gain-switching method, using a characteristic of the wavelength shift from the n = 1 to the n = 2 subband with shortening the cavity length.
UR - http://www.scopus.com/inward/record.url?scp=0034187829&partnerID=8YFLogxK
U2 - 10.1109/2944.865106
DO - 10.1109/2944.865106
M3 - Article
AN - SCOPUS:0034187829
SN - 1077-260X
VL - 6
SP - 511
EP - 521
JO - IEEE Journal on Selected Topics in Quantum Electronics
JF - IEEE Journal on Selected Topics in Quantum Electronics
IS - 3
ER -