Characteristics of Thin Film Passivation Processed by a Low-temperature Process LAPECVD

Jung A. Choi, Ho Nyun Lee, Kwan Hyun Cho, Seung Woo Lee, Byeong Kwon Ju, Kyung Tae Kang

Research output: Contribution to journalConference articlepeer-review


Nowadays, temperature-lowering during process has been discussed as an important problem due to high-integrity of semi¬conductor technology. New low-temperature deposition technologies are introduced due to above problem. This research compared between characteristics of traditional PECVD thin film and characteristics of SiNx film which is deposited by LAPECVD (Laser Assisted PECVD) applied deposition method. From measurements of the thickness, surface topography, etch rate, and refractive indices, we demonstrate the enhanced quality of SiNx films fabricated by CO2 laser irradiation. The sample that was deposited with LAPECVD method in 35°C has similar etch rate to SiNx film which was deposited from more than 250°Cwith PECVD process. Inorganic thin film which is produced with LAPECVD can be applied to OLED element as passivation layer to suggest application possibility on flexible display.

Original languageEnglish
Pages (from-to)2015-2017
Number of pages3
JournalDigest of Technical Papers - SID International Symposium
Issue number1
Publication statusPublished - 2017
EventSID Symposium, Seminar, and Exhibition 2017, Display Week 2017 - Los Angeles, United States
Duration: 2017 May 212017 May 26

Bibliographical note

Publisher Copyright:
© 2017 SID.


  • Barrier film
  • CO2 laser irradiation
  • Flexible
  • Laser-assistedplasma enhanced chemical vapor deposition (LAPECVD)
  • Organic light-emitting diodes (OLEDs)

ASJC Scopus subject areas

  • General Engineering


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