Characteristics of ultrashallow hetero indium-gallium-zinc-oxide/germanium junction

Juhyeon Shin, Jaewoo Shim, Jongtaek Lee, Seung Ha Choi, Woo Shik Jung, Hyun Yong Yu, Yonghan Roh, Jin Hong Park

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


In this letter, we demonstrate an n-indium-gallium-zinc-oxide (IGZO)/i-germanium (Ge) heterojunction diode with an ultrashallow junction depth of \sim 37 nm. X-ray diffraction, atomic force microscopy, and secondary ion mass spectrometry analyses are performed to precisely investigate the n-IGZO and n-IGZO/i-Ge junctions. When the junction diodes are annealed at between 400 \circC and 600 \circC, a very high on-current density (\hbox180-320\ \hboxA/cm2), which is comparable to that of a Ti/i-Ge reference junction, is obtained. In particular, after the 600 \circC anneal, a fairly high on/off-current ratio (\hbox7 \times \hbox102) is also observed.

Original languageEnglish
Article number6296680
Pages (from-to)1363-1365
Number of pages3
JournalIEEE Electron Device Letters
Issue number10
Publication statusPublished - 2012

Bibliographical note

Funding Information:
Manuscript received July 9, 2012; accepted July 25, 2012. Date of publication September 6, 2012; date of current version September 21, 2012. This work was supported in part by the Basic Science Research Program through the National Research Foundation of Korea funded by the Ministry of Education, Science, and Technology under NRF-2012-0003218 and in part by the International Collaborative R&D Program of Korea Institute of Energy Technology Evaluation and Planning (KETEP) funded by the Ministry of Knowledge Economy of the Korean Government under Grant 2011-8520010030. The review of this letter was arranged by Editor O. Manasreh.


  • Germanium (Ge)
  • heterojunction
  • indium-gallium-zinc-oxide (IGZO)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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