Characteristics of UV photodetector fabricated by Al0.3Ga0.7N/GaN heterostructure

In Seok Seo, In Hwan Lee, Yong Jo Park, Cheul Ro Lee

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)


We report on the solar-blind metal-semiconductor-metal (MSM) UV photodetector fabricated on the Al0.3Ga0.7N/GaN heterostructure layer grown on sapphire(0001) by metalorganic chemical vapor deposition. The use of high-temperature (HT)-AlN interlayer in Al0.3Ga0.7N/GaN epilayer and its effects on the grown structures were explored. The Al0.3Ga0.7N-based interdigitated MSM photodetector has been successfully fabricated and characterized. The device reveals that a visible rejection is more than 3 orders of magnitude with a cutoff wavelength at 292 nm and the responsivity is up to 0.15 A/W. Also, MSM UV photodetector shows very fast response time of 12.5ns without reverse bias and very low dark current due to low noise with a typical value of 72 pA and 0.15 μA at 10 and 40 V, respectively. The obtained results are very promising for the enhancement of solar-blind MSM UV photodetectors and simultaneously very sufficient for application in UV region such as UV astronomy, UV missile detection and visible blindness materials.

Original languageEnglish
Pages (from-to)51-57
Number of pages7
JournalJournal of Crystal Growth
Issue number1-3
Publication statusPublished - 2003 May
Externally publishedYes


  • A3. Metalorganic chemical vapor deposition
  • B2. Semiconducting III-V materials
  • B3. Hetero-junction semiconductor devices

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


Dive into the research topics of 'Characteristics of UV photodetector fabricated by Al0.3Ga0.7N/GaN heterostructure'. Together they form a unique fingerprint.

Cite this