Characteristics of ZnS:Mn thin film electroluminescent device using layered BaTiO3 thin film structures

M. H. Song; Y. H. Lee; T. S. Hahn; M. H. Oh; K. H. Yoon

doi:10.1016/S0038-1101(98)00129-4

Characteristics of ZnS:Mn thin film electroluminescent device using layered BaTiO₃ thin film structures

M. H. Song, Y. H. Lee, T. S. Hahn, M. H. Oh, K. H. Yoon

Department of Physics

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

A multilayered and a double-layered BaTiO₃ thin film structure were applied to the preparation of ZnS:Mn thin film electroluminescent (TFEL) devices. From the characterization of the TFEL devices, it was confirmed that the multilayered BaTiO₃ thin film structure prepared by a new stacking method, i.e. deposition of an amorphous layer during continuous cooling of the substrate after the deposition of a polycrystalline layer at higher temperature, had very suitable electrical properties for the insulating layer of the TFEL device. The ZnS:Mn TFEL device using the multilayered BaTiO₃ thin film structure showed stable efficiency characteristics with operating time as well as a low turn-on voltage of ∼50 V and a high saturated brightness of ∼3000 cd m^-2.

Original language	English
Pages (from-to)	1711-1717
Number of pages	7
Journal	Solid-State Electronics
Volume	42
Issue number	9
DOIs	https://doi.org/10.1016/S0038-1101(98)00129-4
Publication status	Published - 1998 Sept 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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abstract = "A multilayered and a double-layered BaTiO3 thin film structure were applied to the preparation of ZnS:Mn thin film electroluminescent (TFEL) devices. From the characterization of the TFEL devices, it was confirmed that the multilayered BaTiO3 thin film structure prepared by a new stacking method, i.e. deposition of an amorphous layer during continuous cooling of the substrate after the deposition of a polycrystalline layer at higher temperature, had very suitable electrical properties for the insulating layer of the TFEL device. The ZnS:Mn TFEL device using the multilayered BaTiO3 thin film structure showed stable efficiency characteristics with operating time as well as a low turn-on voltage of ∼50 V and a high saturated brightness of ∼3000 cd m-2.",

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AU - Song, M. H.

AU - Lee, Y. H.

AU - Hahn, T. S.

AU - Oh, M. H.

AU - Yoon, K. H.

PY - 1998/9/1

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N2 - A multilayered and a double-layered BaTiO3 thin film structure were applied to the preparation of ZnS:Mn thin film electroluminescent (TFEL) devices. From the characterization of the TFEL devices, it was confirmed that the multilayered BaTiO3 thin film structure prepared by a new stacking method, i.e. deposition of an amorphous layer during continuous cooling of the substrate after the deposition of a polycrystalline layer at higher temperature, had very suitable electrical properties for the insulating layer of the TFEL device. The ZnS:Mn TFEL device using the multilayered BaTiO3 thin film structure showed stable efficiency characteristics with operating time as well as a low turn-on voltage of ∼50 V and a high saturated brightness of ∼3000 cd m-2.

AB - A multilayered and a double-layered BaTiO3 thin film structure were applied to the preparation of ZnS:Mn thin film electroluminescent (TFEL) devices. From the characterization of the TFEL devices, it was confirmed that the multilayered BaTiO3 thin film structure prepared by a new stacking method, i.e. deposition of an amorphous layer during continuous cooling of the substrate after the deposition of a polycrystalline layer at higher temperature, had very suitable electrical properties for the insulating layer of the TFEL device. The ZnS:Mn TFEL device using the multilayered BaTiO3 thin film structure showed stable efficiency characteristics with operating time as well as a low turn-on voltage of ∼50 V and a high saturated brightness of ∼3000 cd m-2.

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Characteristics of ZnS:Mn thin film electroluminescent device using layered BaTiO₃ thin film structures

Abstract

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