Characterization and Cu electroless plating of laser-drilled through-wafer via-holes in GaN/Al2O3

Jaehui Ahn, Hong Yeol Kim, Hyo Chol Koo, Jae Jeong Kim, Jihyun Kim

    Research output: Contribution to journalArticlepeer-review

    2 Citations (Scopus)

    Abstract

    GaN on Al2O3 was drilled with a high power Nd:YAG laser. Micro-Raman spectroscopy showed that the induced damage was nominal at about 15 μm from the edge of the drilled through-wafer via-holes. Cu plating was accomplished using an electroless plating technique. FIB was employed to expose the interface between electrolessly plated Cu and GaN on the sidewall of the drilled holes, followed by SEM/EDX to confirm that the sidewall of the drilled holes was successfully covered with Cu. Cu electroless plating after laser drilling has the potential to simplify device layout and improve device integration.

    Original languageEnglish
    Pages (from-to)3841-3843
    Number of pages3
    JournalThin Solid Films
    Volume517
    Issue number14
    DOIs
    Publication statusPublished - 2009 May 29

    Bibliographical note

    Funding Information:
    The research at Korea University was supported by the Korea Research Foundation Grant funded by the Korean Government (KRF-2006-331-D00126) and by BK21 program.

    Keywords

    • Cu plating
    • GaN
    • Laser drilling

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films
    • Metals and Alloys
    • Materials Chemistry

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