Abstract
GaN on Al2O3 was drilled with a high power Nd:YAG laser. Micro-Raman spectroscopy showed that the induced damage was nominal at about 15 μm from the edge of the drilled through-wafer via-holes. Cu plating was accomplished using an electroless plating technique. FIB was employed to expose the interface between electrolessly plated Cu and GaN on the sidewall of the drilled holes, followed by SEM/EDX to confirm that the sidewall of the drilled holes was successfully covered with Cu. Cu electroless plating after laser drilling has the potential to simplify device layout and improve device integration.
Original language | English |
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Pages (from-to) | 3841-3843 |
Number of pages | 3 |
Journal | Thin Solid Films |
Volume | 517 |
Issue number | 14 |
DOIs | |
Publication status | Published - 2009 May 29 |
Bibliographical note
Funding Information:The research at Korea University was supported by the Korea Research Foundation Grant funded by the Korean Government (KRF-2006-331-D00126) and by BK21 program.
Keywords
- Cu plating
- GaN
- Laser drilling
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry