Characterization and Cu electroless plating of laser-drilled through-wafer via-holes in GaN/Al2O3

Jaehui Ahn; Hong Yeol Kim; Hyo Chol Koo; Jae Jeong Kim; Jihyun Kim

doi:10.1016/j.tsf.2009.01.160

Characterization and Cu electroless plating of laser-drilled through-wafer via-holes in GaN/Al₂O₃

Jaehui Ahn, Hong Yeol Kim, Hyo Chol Koo, Jae Jeong Kim, Jihyun Kim

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

GaN on Al₂O₃ was drilled with a high power Nd:YAG laser. Micro-Raman spectroscopy showed that the induced damage was nominal at about 15 μm from the edge of the drilled through-wafer via-holes. Cu plating was accomplished using an electroless plating technique. FIB was employed to expose the interface between electrolessly plated Cu and GaN on the sidewall of the drilled holes, followed by SEM/EDX to confirm that the sidewall of the drilled holes was successfully covered with Cu. Cu electroless plating after laser drilling has the potential to simplify device layout and improve device integration.

Original language	English
Pages (from-to)	3841-3843
Number of pages	3
Journal	Thin Solid Films
Volume	517
Issue number	14
DOIs	https://doi.org/10.1016/j.tsf.2009.01.160
Publication status	Published - 2009 May 29

Keywords

Cu plating
GaN
Laser drilling

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2009.01.160

Cite this

@article{91d124fead6d477c82dc20345cd7af94,

title = "Characterization and Cu electroless plating of laser-drilled through-wafer via-holes in GaN/Al2O3",

abstract = "GaN on Al2O3 was drilled with a high power Nd:YAG laser. Micro-Raman spectroscopy showed that the induced damage was nominal at about 15 μm from the edge of the drilled through-wafer via-holes. Cu plating was accomplished using an electroless plating technique. FIB was employed to expose the interface between electrolessly plated Cu and GaN on the sidewall of the drilled holes, followed by SEM/EDX to confirm that the sidewall of the drilled holes was successfully covered with Cu. Cu electroless plating after laser drilling has the potential to simplify device layout and improve device integration.",

keywords = "Cu plating, GaN, Laser drilling",

author = "Jaehui Ahn and Kim, {Hong Yeol} and Koo, {Hyo Chol} and Kim, {Jae Jeong} and Jihyun Kim",

note = "Funding Information: The research at Korea University was supported by the Korea Research Foundation Grant funded by the Korean Government (KRF-2006-331-D00126) and by BK21 program.",

year = "2009",

month = may,

day = "29",

doi = "10.1016/j.tsf.2009.01.160",

language = "English",

volume = "517",

pages = "3841--3843",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "14",

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T1 - Characterization and Cu electroless plating of laser-drilled through-wafer via-holes in GaN/Al2O3

AU - Ahn, Jaehui

AU - Kim, Hong Yeol

AU - Koo, Hyo Chol

AU - Kim, Jae Jeong

AU - Kim, Jihyun

N1 - Funding Information: The research at Korea University was supported by the Korea Research Foundation Grant funded by the Korean Government (KRF-2006-331-D00126) and by BK21 program.

PY - 2009/5/29

Y1 - 2009/5/29

N2 - GaN on Al2O3 was drilled with a high power Nd:YAG laser. Micro-Raman spectroscopy showed that the induced damage was nominal at about 15 μm from the edge of the drilled through-wafer via-holes. Cu plating was accomplished using an electroless plating technique. FIB was employed to expose the interface between electrolessly plated Cu and GaN on the sidewall of the drilled holes, followed by SEM/EDX to confirm that the sidewall of the drilled holes was successfully covered with Cu. Cu electroless plating after laser drilling has the potential to simplify device layout and improve device integration.

AB - GaN on Al2O3 was drilled with a high power Nd:YAG laser. Micro-Raman spectroscopy showed that the induced damage was nominal at about 15 μm from the edge of the drilled through-wafer via-holes. Cu plating was accomplished using an electroless plating technique. FIB was employed to expose the interface between electrolessly plated Cu and GaN on the sidewall of the drilled holes, followed by SEM/EDX to confirm that the sidewall of the drilled holes was successfully covered with Cu. Cu electroless plating after laser drilling has the potential to simplify device layout and improve device integration.

KW - Cu plating

KW - GaN

KW - Laser drilling

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DO - 10.1016/j.tsf.2009.01.160

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