TY - JOUR
T1 - Characterization and evaluation of extended defects in CZT crystals for gamma-ray detectors
AU - Bolotnikov, A. E.
AU - Camarda, G. S.
AU - Cui, Y.
AU - Yang, G.
AU - Hossain, A.
AU - Kim, K.
AU - James, R. B.
N1 - Funding Information:
The authors would like to thank Drs. D. Bale and C. Szeles from Endicott Interconnects and Dr. H. Chen from Redlen Technologies for very useful discussions and suggestions. The support by the U.S. Department of Energy's Office of Nonproliferation and Treaty Verification (NA22) and U.S. Defense Threat Reduction Agency (DTRA) is also acknowledged.
PY - 2013
Y1 - 2013
N2 - Material homogeneity is critical in achieving high-performance in all types of radiation detectors. This requirement is not inevitably satisfied in today's commercial detector-grade CdZnTe (CZT) material because it contains high concentrations of extended defects, in particular, Te inclusions, dislocation networks, and twin- and subgrain-boundaries that affect the energy resolution and the efficiency of the devices. Defects, such as grain boundaries and cracks that completely block charge-carrier transport are impermissible in CZT radiation-detectors at concentrations exceeding certain threshold values. Our group in Brookhaven National Laboratory (BNL) conducts systematic studies, detailing the roles of crystal defects in CZT detectors and the mechanisms underlying their formation and effects. We employ infrared transmission microscopy, white beam X-ray diffraction topography, and high-spatialresolution X-ray response mapping to identify particular types of defects and reveal their relationship with the devices' performances. In this article, we summarize some of the most important results that our group obtained over the past 5 years.
AB - Material homogeneity is critical in achieving high-performance in all types of radiation detectors. This requirement is not inevitably satisfied in today's commercial detector-grade CdZnTe (CZT) material because it contains high concentrations of extended defects, in particular, Te inclusions, dislocation networks, and twin- and subgrain-boundaries that affect the energy resolution and the efficiency of the devices. Defects, such as grain boundaries and cracks that completely block charge-carrier transport are impermissible in CZT radiation-detectors at concentrations exceeding certain threshold values. Our group in Brookhaven National Laboratory (BNL) conducts systematic studies, detailing the roles of crystal defects in CZT detectors and the mechanisms underlying their formation and effects. We employ infrared transmission microscopy, white beam X-ray diffraction topography, and high-spatialresolution X-ray response mapping to identify particular types of defects and reveal their relationship with the devices' performances. In this article, we summarize some of the most important results that our group obtained over the past 5 years.
KW - A1. Defects
KW - A1. Radiation
KW - A1. Volume defects
KW - B2. Semiconducting materials
UR - http://www.scopus.com/inward/record.url?scp=84885372101&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2013.01.048
DO - 10.1016/j.jcrysgro.2013.01.048
M3 - Article
AN - SCOPUS:84885372101
SN - 0022-0248
VL - 379
SP - 46
EP - 56
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
ER -