Characterization of 5 MeV proton-irradiated gallium nitride nanowires

H. Y. Kim; J. Ahn; M. A. Mastro; C. R. Eddy; J. Han; T. Yang; J. Kim

doi:10.1116/1.3159783

Characterization of 5 MeV proton-irradiated gallium nitride nanowires

H. Y. Kim, J. Ahn, M. A. Mastro, C. R. Eddy, J. Han, T. Yang, J. Kim

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Letter › peer-review

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Abstract

GaN nanowires were irradiated using a cyclotron at 5 MeV energy with a fluency of up to 3.38× 10¹⁵ / cm² protons. The resistance of the GaN was increased by 95% at a dose of 1.69× 10 ¹⁵ / cm² protons and then 116% at a dose of 3.38× 10¹⁵ / cm² protons because of the damage induced by the high energy protons. Cathodoluminescence of the GaN nanowires found a slight broadening of near band-edge emission and a dramatic decrease in the intensity of midgap transitions. These GaN-based nanomaterials have a potential in space technology because of their strong bonding energy compared to other material systems such as silicon and GaAs. Furthermore, the relatively small decrease in resistivity confirms the predicted robustness to proton irradiation of GaN nanowires compared to a GaN thin film.

Original language	English
Pages (from-to)	L11-L13
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	27
Issue number	4
DOIs	https://doi.org/10.1116/1.3159783
Publication status	Published - 2009

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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@article{47c75aab6774486f962a84263938927a,

title = "Characterization of 5 MeV proton-irradiated gallium nitride nanowires",

abstract = "GaN nanowires were irradiated using a cyclotron at 5 MeV energy with a fluency of up to 3.38× 1015 / cm2 protons. The resistance of the GaN was increased by 95% at a dose of 1.69× 10 15 / cm2 protons and then 116% at a dose of 3.38× 1015 / cm2 protons because of the damage induced by the high energy protons. Cathodoluminescence of the GaN nanowires found a slight broadening of near band-edge emission and a dramatic decrease in the intensity of midgap transitions. These GaN-based nanomaterials have a potential in space technology because of their strong bonding energy compared to other material systems such as silicon and GaAs. Furthermore, the relatively small decrease in resistivity confirms the predicted robustness to proton irradiation of GaN nanowires compared to a GaN thin film.",

author = "Kim, {H. Y.} and J. Ahn and Mastro, {M. A.} and Eddy, {C. R.} and J. Han and T. Yang and J. Kim",

note = "Funding Information: The research at Korea University was supported by Korea Science and Engineering Foundation grant funded by the Korean government (MEST) (Grant No. 2009-0074106) and BK21 program and was carried out using MC-50 cyclotron at the Korea Institute of Radiological and Medical Sciences. The research at NRL was supported by ONR. ",

year = "2009",

doi = "10.1116/1.3159783",

language = "English",

volume = "27",

pages = "L11--L13",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "4",

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TY - JOUR

T1 - Characterization of 5 MeV proton-irradiated gallium nitride nanowires

AU - Kim, H. Y.

AU - Ahn, J.

AU - Mastro, M. A.

AU - Eddy, C. R.

AU - Han, J.

AU - Yang, T.

AU - Kim, J.

N1 - Funding Information: The research at Korea University was supported by Korea Science and Engineering Foundation grant funded by the Korean government (MEST) (Grant No. 2009-0074106) and BK21 program and was carried out using MC-50 cyclotron at the Korea Institute of Radiological and Medical Sciences. The research at NRL was supported by ONR.

PY - 2009

Y1 - 2009

N2 - GaN nanowires were irradiated using a cyclotron at 5 MeV energy with a fluency of up to 3.38× 1015 / cm2 protons. The resistance of the GaN was increased by 95% at a dose of 1.69× 10 15 / cm2 protons and then 116% at a dose of 3.38× 1015 / cm2 protons because of the damage induced by the high energy protons. Cathodoluminescence of the GaN nanowires found a slight broadening of near band-edge emission and a dramatic decrease in the intensity of midgap transitions. These GaN-based nanomaterials have a potential in space technology because of their strong bonding energy compared to other material systems such as silicon and GaAs. Furthermore, the relatively small decrease in resistivity confirms the predicted robustness to proton irradiation of GaN nanowires compared to a GaN thin film.

AB - GaN nanowires were irradiated using a cyclotron at 5 MeV energy with a fluency of up to 3.38× 1015 / cm2 protons. The resistance of the GaN was increased by 95% at a dose of 1.69× 10 15 / cm2 protons and then 116% at a dose of 3.38× 1015 / cm2 protons because of the damage induced by the high energy protons. Cathodoluminescence of the GaN nanowires found a slight broadening of near band-edge emission and a dramatic decrease in the intensity of midgap transitions. These GaN-based nanomaterials have a potential in space technology because of their strong bonding energy compared to other material systems such as silicon and GaAs. Furthermore, the relatively small decrease in resistivity confirms the predicted robustness to proton irradiation of GaN nanowires compared to a GaN thin film.

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U2 - 10.1116/1.3159783

DO - 10.1116/1.3159783

M3 - Letter

AN - SCOPUS:68349133778

SN - 1071-1023

VL - 27

SP - L11-L13

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

ER -

Characterization of 5 MeV proton-irradiated gallium nitride nanowires

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