Characterization of a CMOS 135-GHz low noise amplifier with two different noise measurement methods

Doyoon Kim; Sooyeon Kim; Kiryong Song; Jungsoo Kim; Junghwan Yoo; Jae Sung Rieh

doi:10.5573/JSTS.2018.18.4.536

Characterization of a CMOS 135-GHz low noise amplifier with two different noise measurement methods

Doyoon Kim, Sooyeon Kim, Kiryong Song, Jungsoo Kim, Junghwan Yoo, Jae Sung Rieh

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

A D-band low-noise amplifier (LNA) has been developed based on a 65-nm CMOS technology, which showed a measured peak gain of 16.1 dB at 134.5 GHz. The noise property of the fabricated amplifier was characterized with two different noise measurement techniques: the cryogenic Y-factor method and the N-times power method. The two methods showed a minimum value of the noise figure of 10.7 dB and 14.7 dB, respectively.

Original language	English
Pages (from-to)	536-540
Number of pages	5
Journal	Journal of Semiconductor Technology and Science
Volume	18
Issue number	4
DOIs	https://doi.org/10.5573/JSTS.2018.18.4.536
Publication status	Published - 2018 Aug

Bibliographical note

Funding Information:
This work wasupportedbytheNational Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (NRF-2015R1A2A1A05001836).

Publisher Copyright:
© 2018, Institute of Electronics Engineers of Korea. All rights reserved.

Keywords

65 nm CMOS
Low-noise amplifier
N-times power method
Noise
Y-factor method

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.5573/JSTS.2018.18.4.536

Cite this

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title = "Characterization of a CMOS 135-GHz low noise amplifier with two different noise measurement methods",

abstract = "A D-band low-noise amplifier (LNA) has been developed based on a 65-nm CMOS technology, which showed a measured peak gain of 16.1 dB at 134.5 GHz. The noise property of the fabricated amplifier was characterized with two different noise measurement techniques: the cryogenic Y-factor method and the N-times power method. The two methods showed a minimum value of the noise figure of 10.7 dB and 14.7 dB, respectively.",

keywords = "65 nm CMOS, Low-noise amplifier, N-times power method, Noise, Y-factor method",

author = "Doyoon Kim and Sooyeon Kim and Kiryong Song and Jungsoo Kim and Junghwan Yoo and Rieh, {Jae Sung}",

note = "Funding Information: This work wasupportedbytheNational Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (NRF-2015R1A2A1A05001836). Publisher Copyright: {\textcopyright} 2018, Institute of Electronics Engineers of Korea. All rights reserved.",

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doi = "10.5573/JSTS.2018.18.4.536",

language = "English",

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AU - Kim, Doyoon

AU - Kim, Sooyeon

AU - Song, Kiryong

AU - Kim, Jungsoo

AU - Yoo, Junghwan

AU - Rieh, Jae Sung

N1 - Funding Information: This work wasupportedbytheNational Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (NRF-2015R1A2A1A05001836). Publisher Copyright: © 2018, Institute of Electronics Engineers of Korea. All rights reserved.

PY - 2018/8

Y1 - 2018/8

N2 - A D-band low-noise amplifier (LNA) has been developed based on a 65-nm CMOS technology, which showed a measured peak gain of 16.1 dB at 134.5 GHz. The noise property of the fabricated amplifier was characterized with two different noise measurement techniques: the cryogenic Y-factor method and the N-times power method. The two methods showed a minimum value of the noise figure of 10.7 dB and 14.7 dB, respectively.

AB - A D-band low-noise amplifier (LNA) has been developed based on a 65-nm CMOS technology, which showed a measured peak gain of 16.1 dB at 134.5 GHz. The noise property of the fabricated amplifier was characterized with two different noise measurement techniques: the cryogenic Y-factor method and the N-times power method. The two methods showed a minimum value of the noise figure of 10.7 dB and 14.7 dB, respectively.

KW - 65 nm CMOS

KW - Low-noise amplifier

KW - N-times power method

KW - Noise

KW - Y-factor method

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JO - Journal of Semiconductor Technology and Science

JF - Journal of Semiconductor Technology and Science

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ER -

Characterization of a CMOS 135-GHz low noise amplifier with two different noise measurement methods

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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