Characterization of a photodiode coupled with a Si nanowire-FET on a plastic substrate

Kiyeol Kwak; Kyoungah Cho; Sangsig Kim

doi:10.3390/s101009118

Characterization of a photodiode coupled with a Si nanowire-FET on a plastic substrate

Kiyeol Kwak, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

In this study, a laterally coupled device composed of a photodiode and a Si nanowires-field-effect transistor (NWs-FET) is constructed on a plastic substrate and the coupled device is characterized. The photodiode is made of p-type Si NWs and an n-type ZnO film. The Si NWs-FET is connected electrically to the photodiode in order to enhance the latter's photocurrent efficiency by adjusting the gate voltage of the FET. When the FET is switched on by biasing a gate voltage of -9 V, the photocurrent efficiency of the photodiode is three times higher than that when the FET is switched off by biasing a gate voltage of 0 V.

Original language	English
Pages (from-to)	9118-9126
Number of pages	9
Journal	Sensors (Switzerland)
Volume	10
Issue number	10
DOIs	https://doi.org/10.3390/s101009118
Publication status	Published - 2010 Oct 1

Keywords

FET
Nanowire
Optical sensor
Plastic substrate
pn heterojunction photodiode

ASJC Scopus subject areas

Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics
Analytical Chemistry
Biochemistry

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10.3390/s101009118

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abstract = "In this study, a laterally coupled device composed of a photodiode and a Si nanowires-field-effect transistor (NWs-FET) is constructed on a plastic substrate and the coupled device is characterized. The photodiode is made of p-type Si NWs and an n-type ZnO film. The Si NWs-FET is connected electrically to the photodiode in order to enhance the latter's photocurrent efficiency by adjusting the gate voltage of the FET. When the FET is switched on by biasing a gate voltage of -9 V, the photocurrent efficiency of the photodiode is three times higher than that when the FET is switched off by biasing a gate voltage of 0 V.",

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AU - Kwak, Kiyeol

AU - Cho, Kyoungah

AU - Kim, Sangsig

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N2 - In this study, a laterally coupled device composed of a photodiode and a Si nanowires-field-effect transistor (NWs-FET) is constructed on a plastic substrate and the coupled device is characterized. The photodiode is made of p-type Si NWs and an n-type ZnO film. The Si NWs-FET is connected electrically to the photodiode in order to enhance the latter's photocurrent efficiency by adjusting the gate voltage of the FET. When the FET is switched on by biasing a gate voltage of -9 V, the photocurrent efficiency of the photodiode is three times higher than that when the FET is switched off by biasing a gate voltage of 0 V.

AB - In this study, a laterally coupled device composed of a photodiode and a Si nanowires-field-effect transistor (NWs-FET) is constructed on a plastic substrate and the coupled device is characterized. The photodiode is made of p-type Si NWs and an n-type ZnO film. The Si NWs-FET is connected electrically to the photodiode in order to enhance the latter's photocurrent efficiency by adjusting the gate voltage of the FET. When the FET is switched on by biasing a gate voltage of -9 V, the photocurrent efficiency of the photodiode is three times higher than that when the FET is switched off by biasing a gate voltage of 0 V.

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KW - Optical sensor

KW - Plastic substrate

KW - pn heterojunction photodiode

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Characterization of a photodiode coupled with a Si nanowire-FET on a plastic substrate

Abstract

Keywords

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