Characterization of a-plane GaN layers grown on patterned r-sapphire substrate by metal organic chemical vapor deposition

Geunho Yoo, Hyunsung Park, Donghun Lee, Hyoungjin Lim, Seunga Lee, Bohyun Kong, Hyungkoun Cho, Hyoungwon Park, Heon Lee, Okhyun Nam

    Research output: Contribution to journalArticlepeer-review

    6 Citations (Scopus)

    Abstract

    Non-polar a-plane GaN layers were grown on planar and hemispherical micro- and nano-patterned r-sapphire substrates (PSS) by metal organic chemical vapor deposition (MOCVD). Double Crystal X-ray Rocking Curve (DCXRC) and Transmission Electron Microscopy (TEM) analyses showed that the crystal quality of a-GaN grown on the micro-PSS was the best among three kinds of r-sapphire substrates, which was attributed to defect reduction through lateral overgrowth on the hemispherical patterns. The intensity of the near band-edge emission (NBE) at 3.4eV from a-GaN on the micro-PSS was increased by about 30 times compared with that of the conventional a-plane GaN on planar r-sapphire, while the yellow emission spectrum at 2.2eV was the lowest among the three samples. Comparison of the micro-photoluminescence mapping image and the cross-section TEM also showed high and low defect regions on the planar section and hemisphere, respectively.

    Original languageEnglish
    Pages (from-to)S90-S94
    JournalCurrent Applied Physics
    Volume11
    Issue number4 SUPPL.
    DOIs
    Publication statusPublished - 2011 Jul

    Bibliographical note

    Funding Information:
    This work was supported by the Strategic Technology Development Project No. 10031885 and the IT R&D Program Project No. 2009-F-022-01 of the Ministry of Knowledge Economy .

    Copyright:
    Copyright 2011 Elsevier B.V., All rights reserved.

    Keywords

    • Defect reduction
    • InGaN
    • Non-polar GaN
    • PSS

    ASJC Scopus subject areas

    • General Materials Science
    • General Physics and Astronomy

    Fingerprint

    Dive into the research topics of 'Characterization of a-plane GaN layers grown on patterned r-sapphire substrate by metal organic chemical vapor deposition'. Together they form a unique fingerprint.

    Cite this