Characterization of a-plane GaN layers grown on patterned r-sapphire substrate by metal organic chemical vapor deposition

Geunho Yoo; Hyunsung Park; Donghun Lee; Hyoungjin Lim; Seunga Lee; Bohyun Kong; Hyungkoun Cho; Hyoungwon Park; Heon Lee; Okhyun Nam

doi:10.1016/j.cap.2011.03.078

Characterization of a-plane GaN layers grown on patterned r-sapphire substrate by metal organic chemical vapor deposition

Geunho Yoo, Hyunsung Park, Donghun Lee, Hyoungjin Lim, Seunga Lee, Bohyun Kong, Hyungkoun Cho, Hyoungwon Park, Heon Lee, Okhyun Nam

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Non-polar a-plane GaN layers were grown on planar and hemispherical micro- and nano-patterned r-sapphire substrates (PSS) by metal organic chemical vapor deposition (MOCVD). Double Crystal X-ray Rocking Curve (DCXRC) and Transmission Electron Microscopy (TEM) analyses showed that the crystal quality of a-GaN grown on the micro-PSS was the best among three kinds of r-sapphire substrates, which was attributed to defect reduction through lateral overgrowth on the hemispherical patterns. The intensity of the near band-edge emission (NBE) at 3.4eV from a-GaN on the micro-PSS was increased by about 30 times compared with that of the conventional a-plane GaN on planar r-sapphire, while the yellow emission spectrum at 2.2eV was the lowest among the three samples. Comparison of the micro-photoluminescence mapping image and the cross-section TEM also showed high and low defect regions on the planar section and hemisphere, respectively.

Original language	English
Pages (from-to)	S90-S94
Journal	Current Applied Physics
Volume	11
Issue number	4 SUPPL.
DOIs	https://doi.org/10.1016/j.cap.2011.03.078
Publication status	Published - 2011 Jul

Bibliographical note

Funding Information:
This work was supported by the Strategic Technology Development Project No. 10031885 and the IT R&D Program Project No. 2009-F-022-01 of the Ministry of Knowledge Economy .

Copyright:
Copyright 2011 Elsevier B.V., All rights reserved.

Keywords

Defect reduction
InGaN
Non-polar GaN
PSS

ASJC Scopus subject areas

General Materials Science
General Physics and Astronomy

Access to Document

10.1016/j.cap.2011.03.078

Cite this

@article{287d1e8ed3d149a3a616df84d1fd0f33,

title = "Characterization of a-plane GaN layers grown on patterned r-sapphire substrate by metal organic chemical vapor deposition",

abstract = "Non-polar a-plane GaN layers were grown on planar and hemispherical micro- and nano-patterned r-sapphire substrates (PSS) by metal organic chemical vapor deposition (MOCVD). Double Crystal X-ray Rocking Curve (DCXRC) and Transmission Electron Microscopy (TEM) analyses showed that the crystal quality of a-GaN grown on the micro-PSS was the best among three kinds of r-sapphire substrates, which was attributed to defect reduction through lateral overgrowth on the hemispherical patterns. The intensity of the near band-edge emission (NBE) at 3.4eV from a-GaN on the micro-PSS was increased by about 30 times compared with that of the conventional a-plane GaN on planar r-sapphire, while the yellow emission spectrum at 2.2eV was the lowest among the three samples. Comparison of the micro-photoluminescence mapping image and the cross-section TEM also showed high and low defect regions on the planar section and hemisphere, respectively.",

keywords = "Defect reduction, InGaN, Non-polar GaN, PSS",

author = "Geunho Yoo and Hyunsung Park and Donghun Lee and Hyoungjin Lim and Seunga Lee and Bohyun Kong and Hyungkoun Cho and Hyoungwon Park and Heon Lee and Okhyun Nam",

note = "Funding Information: This work was supported by the Strategic Technology Development Project No. 10031885 and the IT R&D Program Project No. 2009-F-022-01 of the Ministry of Knowledge Economy . Copyright: Copyright 2011 Elsevier B.V., All rights reserved.",

year = "2011",

month = jul,

doi = "10.1016/j.cap.2011.03.078",

language = "English",

volume = "11",

pages = "S90--S94",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier",

number = "4 SUPPL.",

}

TY - JOUR

T1 - Characterization of a-plane GaN layers grown on patterned r-sapphire substrate by metal organic chemical vapor deposition

AU - Yoo, Geunho

AU - Park, Hyunsung

AU - Lee, Donghun

AU - Lim, Hyoungjin

AU - Lee, Seunga

AU - Kong, Bohyun

AU - Cho, Hyungkoun

AU - Park, Hyoungwon

AU - Lee, Heon

AU - Nam, Okhyun

N1 - Funding Information: This work was supported by the Strategic Technology Development Project No. 10031885 and the IT R&D Program Project No. 2009-F-022-01 of the Ministry of Knowledge Economy . Copyright: Copyright 2011 Elsevier B.V., All rights reserved.

PY - 2011/7

Y1 - 2011/7

N2 - Non-polar a-plane GaN layers were grown on planar and hemispherical micro- and nano-patterned r-sapphire substrates (PSS) by metal organic chemical vapor deposition (MOCVD). Double Crystal X-ray Rocking Curve (DCXRC) and Transmission Electron Microscopy (TEM) analyses showed that the crystal quality of a-GaN grown on the micro-PSS was the best among three kinds of r-sapphire substrates, which was attributed to defect reduction through lateral overgrowth on the hemispherical patterns. The intensity of the near band-edge emission (NBE) at 3.4eV from a-GaN on the micro-PSS was increased by about 30 times compared with that of the conventional a-plane GaN on planar r-sapphire, while the yellow emission spectrum at 2.2eV was the lowest among the three samples. Comparison of the micro-photoluminescence mapping image and the cross-section TEM also showed high and low defect regions on the planar section and hemisphere, respectively.

AB - Non-polar a-plane GaN layers were grown on planar and hemispherical micro- and nano-patterned r-sapphire substrates (PSS) by metal organic chemical vapor deposition (MOCVD). Double Crystal X-ray Rocking Curve (DCXRC) and Transmission Electron Microscopy (TEM) analyses showed that the crystal quality of a-GaN grown on the micro-PSS was the best among three kinds of r-sapphire substrates, which was attributed to defect reduction through lateral overgrowth on the hemispherical patterns. The intensity of the near band-edge emission (NBE) at 3.4eV from a-GaN on the micro-PSS was increased by about 30 times compared with that of the conventional a-plane GaN on planar r-sapphire, while the yellow emission spectrum at 2.2eV was the lowest among the three samples. Comparison of the micro-photoluminescence mapping image and the cross-section TEM also showed high and low defect regions on the planar section and hemisphere, respectively.

KW - Defect reduction

KW - InGaN

KW - Non-polar GaN

KW - PSS

UR - http://www.scopus.com/inward/record.url?scp=80455173956&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2011.03.078

DO - 10.1016/j.cap.2011.03.078

M3 - Article

AN - SCOPUS:80455173956

SN - 1567-1739

VL - 11

SP - S90-S94

JO - Current Applied Physics

JF - Current Applied Physics

IS - 4 SUPPL.

ER -

Characterization of a-plane GaN layers grown on patterned r-sapphire substrate by metal organic chemical vapor deposition

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this