Characterization of a-plane GaN layers grown on patterned r-sapphire substrate by metal organic chemical vapor deposition

Geunho Yoo; Hyunsung Park; Donghun Lee; Hyoungjin Lim; Seunga Lee; Bohyun Kong; Hyungkoun Cho; Hyoungwon Park; Heon Lee; Okhyun Nam

doi:10.1016/j.cap.2011.03.078

Characterization of a-plane GaN layers grown on patterned r-sapphire substrate by metal organic chemical vapor deposition

Geunho Yoo, Hyunsung Park, Donghun Lee, Hyoungjin Lim, Seunga Lee, Bohyun Kong, Hyungkoun Cho, Hyoungwon Park, Heon Lee, Okhyun Nam

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Non-polar a-plane GaN layers were grown on planar and hemispherical micro- and nano-patterned r-sapphire substrates (PSS) by metal organic chemical vapor deposition (MOCVD). Double Crystal X-ray Rocking Curve (DCXRC) and Transmission Electron Microscopy (TEM) analyses showed that the crystal quality of a-GaN grown on the micro-PSS was the best among three kinds of r-sapphire substrates, which was attributed to defect reduction through lateral overgrowth on the hemispherical patterns. The intensity of the near band-edge emission (NBE) at 3.4eV from a-GaN on the micro-PSS was increased by about 30 times compared with that of the conventional a-plane GaN on planar r-sapphire, while the yellow emission spectrum at 2.2eV was the lowest among the three samples. Comparison of the micro-photoluminescence mapping image and the cross-section TEM also showed high and low defect regions on the planar section and hemisphere, respectively.

Original language	English
Pages (from-to)	S90-S94
Journal	Current Applied Physics
Volume	11
Issue number	4 SUPPL.
DOIs	https://doi.org/10.1016/j.cap.2011.03.078
Publication status	Published - 2011 Jul

Bibliographical note

Funding Information:
This work was supported by the Strategic Technology Development Project No. 10031885 and the IT R&D Program Project No. 2009-F-022-01 of the Ministry of Knowledge Economy .

Copyright:
Copyright 2011 Elsevier B.V., All rights reserved.

Keywords

Defect reduction
InGaN
Non-polar GaN
PSS

ASJC Scopus subject areas

General Materials Science
General Physics and Astronomy

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10.1016/j.cap.2011.03.078

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title = "Characterization of a-plane GaN layers grown on patterned r-sapphire substrate by metal organic chemical vapor deposition",

abstract = "Non-polar a-plane GaN layers were grown on planar and hemispherical micro- and nano-patterned r-sapphire substrates (PSS) by metal organic chemical vapor deposition (MOCVD). Double Crystal X-ray Rocking Curve (DCXRC) and Transmission Electron Microscopy (TEM) analyses showed that the crystal quality of a-GaN grown on the micro-PSS was the best among three kinds of r-sapphire substrates, which was attributed to defect reduction through lateral overgrowth on the hemispherical patterns. The intensity of the near band-edge emission (NBE) at 3.4eV from a-GaN on the micro-PSS was increased by about 30 times compared with that of the conventional a-plane GaN on planar r-sapphire, while the yellow emission spectrum at 2.2eV was the lowest among the three samples. Comparison of the micro-photoluminescence mapping image and the cross-section TEM also showed high and low defect regions on the planar section and hemisphere, respectively.",

keywords = "Defect reduction, InGaN, Non-polar GaN, PSS",

author = "Geunho Yoo and Hyunsung Park and Donghun Lee and Hyoungjin Lim and Seunga Lee and Bohyun Kong and Hyungkoun Cho and Hyoungwon Park and Heon Lee and Okhyun Nam",

note = "Funding Information: This work was supported by the Strategic Technology Development Project No. 10031885 and the IT R&D Program Project No. 2009-F-022-01 of the Ministry of Knowledge Economy . Copyright: Copyright 2011 Elsevier B.V., All rights reserved.",

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AU - Yoo, Geunho

AU - Park, Hyunsung

AU - Lee, Donghun

AU - Lim, Hyoungjin

AU - Lee, Seunga

AU - Kong, Bohyun

AU - Cho, Hyungkoun

AU - Park, Hyoungwon

AU - Lee, Heon

AU - Nam, Okhyun

N1 - Funding Information: This work was supported by the Strategic Technology Development Project No. 10031885 and the IT R&D Program Project No. 2009-F-022-01 of the Ministry of Knowledge Economy . Copyright: Copyright 2011 Elsevier B.V., All rights reserved.

PY - 2011/7

Y1 - 2011/7

N2 - Non-polar a-plane GaN layers were grown on planar and hemispherical micro- and nano-patterned r-sapphire substrates (PSS) by metal organic chemical vapor deposition (MOCVD). Double Crystal X-ray Rocking Curve (DCXRC) and Transmission Electron Microscopy (TEM) analyses showed that the crystal quality of a-GaN grown on the micro-PSS was the best among three kinds of r-sapphire substrates, which was attributed to defect reduction through lateral overgrowth on the hemispherical patterns. The intensity of the near band-edge emission (NBE) at 3.4eV from a-GaN on the micro-PSS was increased by about 30 times compared with that of the conventional a-plane GaN on planar r-sapphire, while the yellow emission spectrum at 2.2eV was the lowest among the three samples. Comparison of the micro-photoluminescence mapping image and the cross-section TEM also showed high and low defect regions on the planar section and hemisphere, respectively.

AB - Non-polar a-plane GaN layers were grown on planar and hemispherical micro- and nano-patterned r-sapphire substrates (PSS) by metal organic chemical vapor deposition (MOCVD). Double Crystal X-ray Rocking Curve (DCXRC) and Transmission Electron Microscopy (TEM) analyses showed that the crystal quality of a-GaN grown on the micro-PSS was the best among three kinds of r-sapphire substrates, which was attributed to defect reduction through lateral overgrowth on the hemispherical patterns. The intensity of the near band-edge emission (NBE) at 3.4eV from a-GaN on the micro-PSS was increased by about 30 times compared with that of the conventional a-plane GaN on planar r-sapphire, while the yellow emission spectrum at 2.2eV was the lowest among the three samples. Comparison of the micro-photoluminescence mapping image and the cross-section TEM also showed high and low defect regions on the planar section and hemisphere, respectively.

KW - Defect reduction

KW - InGaN

KW - Non-polar GaN

KW - PSS

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Characterization of a-plane GaN layers grown on patterned r-sapphire substrate by metal organic chemical vapor deposition

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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