Characterization of AlGaN/GaN HEMT irradiated at 5 keV and 25 MeV proton energies

Hong Yeol Kim, Jaehui Ahn, Jihyun Kim, Sang Pil Yun, Jae Sang Lee

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


AlGaN/GaN high electron mobility transistors(HEMT) were irradiated at 5 keV and 25 MeV proton energies. Current-voltages were compared before and after proton irradiation. As expected from simulation results, 5 keV protons severely damaged the transistors' performance compared to 25 MeV protons. Also, the effects of both low and higher fluencies were compared. Source-Drain currents were dramatically decreased under a higher fluency. Due to the extremely thin 2-Dimensional Electron Gas and the high displacement threshold energy, AlGaN/GaN HEMTs have great potential for applications in earth orbit.

Original languageEnglish
Pages (from-to)155-157
Number of pages3
JournalJournal of Ceramic Processing Research
Issue number2
Publication statusPublished - 2008


  • Gallium nitride
  • High electron mobility transistor
  • Irradiation
  • Proton

ASJC Scopus subject areas

  • Ceramics and Composites


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